{
  "version": 1,
  "title": "晶圆与 Fab 制造全景",
  "cutoff": "2026-10-23",
  "reviewedThrough": "2026-10-24",
  "scope": "覆盖制造功能链与代表性公开可核设施；资料截止日与实际核读日期分列。未披露良率不等于零。",
  "sources": [
    {
      "id": "c-fab",
      "title": "Fabs, Fabless Companies, and Foundries Explained",
      "url": "https://newsroom.lamresearch.com/difference-between-fab-vs-foundry",
      "publisher": "Lam Research",
      "published": "2023-08-07",
      "accessed": "2026-10-24",
      "locator": "Semi 101，定义与Lam’s Role",
      "scope": "Fab设施、Foundry/Fabless/IDM经营方式与设备供应商角色。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-nist",
      "title": "Semiconductor Glossary",
      "url": "https://www.nist.gov/semiconductors/semiconductor-glossary",
      "publisher": "NIST",
      "published": "2022-10-03",
      "accessed": "2026-10-24",
      "locator": "Wafer、Transistor、Integrated circuit、Fab",
      "scope": "晶圆是承载器件的半导体基底；晶圆与电路和Fab的区别。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-chipmaking",
      "title": "How microchips are made",
      "url": "https://www.asml.com/en/technology/all-about-microchips/how-microchips-are-made",
      "publisher": "ASML",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "The chipmaking process；Repeat as needed",
      "scope": "沉积、涂胶、曝光、显影、刻蚀与量测的重复；示意不等于完整工艺配方。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-litho",
      "title": "Lithography principles",
      "url": "https://www.asml.com/en/technology/lithography-principles",
      "publisher": "ASML",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "投影、mask/reticle、Measuring accuracy",
      "scope": "光刻转移图形及光学/机械/量测协同；不是直接把光刻等同刻蚀。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-create",
      "title": "Materials Deposition",
      "url": "https://www.appliedmaterials.com/us/en/semiconductor/products/create.html",
      "publisher": "Applied Materials",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Create；Materials Deposition",
      "scope": "PVD/CVD/ALD、导体和绝缘体材料、厚度和过程变量；公司产品能力，不证明独家供货。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-shape",
      "title": "Materials Removal",
      "url": "https://www.appliedmaterials.com/us/en/semiconductor/products/shape.html",
      "publisher": "Applied Materials",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Shape；etch、selective removal、CMP",
      "scope": "刻蚀选择比/几何结构与CMP平坦化的不同任务。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-modify",
      "title": "Materials Modification",
      "url": "https://www.appliedmaterials.com/us/en/semiconductor/products/modify.html",
      "publisher": "Applied Materials",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Modify；Ion implantation、Annealing",
      "scope": "掺杂与退火改变电性/修复晶格；材料与工艺按器件选择。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-process",
      "title": "Front-end Manufacturing",
      "url": "https://www.semiconductors.org/semiconductors-101/how-are-semiconductors-made/stage-3-front-end-manufacturing/",
      "publisher": "Semiconductor Industry Association",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "工序列表与Metalization",
      "scope": "器件制造重复工序、金属互连和工艺量测；不是所有产品统一配方。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-kla",
      "title": "Chip Manufacturing",
      "url": "https://www.kla.com/products/chip-manufacturing",
      "publisher": "KLA",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Defect Inspection and Review；Metrology；Process Control",
      "scope": "缺陷检测和尺寸/形貌量测及过程控制的角色，不证明具体厂级良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-oip",
      "title": "Open Innovation Platform",
      "url": "https://www.tsmc.com/english/dedicatedFoundry/oip",
      "publisher": "TSMC",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "IP、EDA、Design Center、Value Chain、3DFabric Alliances",
      "scope": "设计生态由IP、EDA、设计服务、制造和封装协作构成。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-eda",
      "title": "EDA Alliance",
      "url": "https://www.tsmc.com/english/dedicatedFoundry/oip/eda_alliance",
      "publisher": "TSMC",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "IC design / physical implementation / final tapeout signoff",
      "scope": "设计、布局布线、物理校验、寄生参数抽取与流片签核；伙伴认证范围。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-mask",
      "title": "Mask Services",
      "url": "https://www.tsmc.com/english/dedicatedFoundry/services/mask_services",
      "publisher": "TSMC",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Mask services概览与制造支持",
      "scope": "掩模是制造接口；mask服务与客户电路设计为不同环节。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-materials",
      "title": "Semiconductor Manufacturing",
      "url": "https://www.entegris.com/en/home/our-science/by-industry/microelectronics/semiconductor.html",
      "publisher": "Entegris",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "CMP、Deposition、Wet Etch and Clean及Contamination Control",
      "scope": "前驱体、抛光和清洗、过滤和污染控制的功能。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-3dfabric",
      "title": "TSMC 3DFabric",
      "url": "https://3dfabric.tsmc.com/english/dedicatedFoundry/technology/3DFabric.htm",
      "publisher": "TSMC",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "SoIC、CoWoS、InFO技术组合",
      "scope": "芯粒/芯片堆叠与先进封装；封装服务与晶圆制造分别识别。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-amkor",
      "title": "IC Semiconductor Test Services",
      "url": "https://amkor.com/test-services/",
      "publisher": "Amkor",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Test Equipment；ATC1–Shanghai；ATP P3/P4",
      "scope": "晶圆探针、成品、老化与系统级测试；上海和菲律宾设施目录能力。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "c-amkor-package",
      "title": "Semiconductor Packaging Solutions",
      "url": "https://amkor.com/packaging/",
      "publisher": "Amkor",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Packaging portfolio",
      "scope": "封装服务能力与多种封装形式；不证明任何特定GPU客户委托。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-01",
      "title": "Silicon Wafers",
      "url": "https://www.shinetsu.co.jp/en/products/electronics-materials/silicon-wafers/",
      "publisher": "Shin-Etsu Chemical",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Silicon Wafers正文首两段；Series Name",
      "scope": "硅石、硅金属、多晶硅、单晶锭及衬底角色；集团产品种类。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-02",
      "title": "Purity Is Our Recipe for Success — Annual Report 2022",
      "url": "https://reports.wacker.com/2022/annual-report/sustainable-solutions/purity-is-our-recipe-for-success.html",
      "publisher": "Wacker Chemie",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Polysilicon正文第2–7段；Glossary Silicon / Polysilicon",
      "scope": "冶金硅经TCS蒸馏和Siemens沉积；电子级与太阳能级区别。年度为2022，未以版权年份推定发布日。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-03",
      "title": "Production Processes",
      "url": "https://www.sumcosi.com/english/products/process/",
      "publisher": "SUMCO",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Monocrystalline pulling process；Other processes；Specialized processing",
      "scope": "CZ、MCZ与FZ选择；外延和SOI属于可选特殊加工。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-04",
      "title": "Silicon Wafers — How to make a silicon wafer",
      "url": "https://www.siltronic.com/en/products.html",
      "publisher": "Siltronic",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Cylindrical grinding；Wire slicing；Lapping；Cleaning and etching",
      "scope": "晶锭定向、加工平行度、研磨及腐蚀去损伤；不代表每家相同配方。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-05",
      "title": "Polished Wafers",
      "url": "https://www.siltronic.com/en/products/polished-wafers.html",
      "publisher": "Siltronic",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Polished wafers正文第1–3段",
      "scope": "CZ/FZ晶体经CMP制成抛光硅片；平坦度和表面质量。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-06",
      "title": "Epitaxial Wafers",
      "url": "https://www.siltronic.com/en/products/epitaxial-wafers.html",
      "publisher": "Siltronic",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Epitaxial wafers正文第1–4段",
      "scope": "抛光Si表面沉积单晶Si外延层，可独立设计外延与衬底性质。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-07",
      "title": "Special Products",
      "url": "https://www.siltronic.com/en/products/special-products.html",
      "publisher": "Siltronic",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Float zone/FZ；PowerFZ段",
      "scope": "低氧、高电阻率、载流子寿命与径向电阻率均匀性；不引用领先排名。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-08",
      "title": "Epitaxial Wafers for High Performance Devices",
      "url": "https://www.topsil.com/wp-content/uploads/2023/05/topsilepi2014v2.pdf",
      "publisher": "Topsil",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "印刷p2：Ingot Growing步骤4–12；p3：步骤17–21；p4：步骤22–25",
      "scope": "晶锭几何处理、倒角、化学去损伤和清洗技术。历史工艺册，不据此判断2026公司或产线状态。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-09",
      "title": "Smart Cut Technology",
      "url": "https://www.soitec.com/home/technology/innovation/smart-cut",
      "publisher": "Soitec",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "A scalpel on an Atomic scale；Numerous industrial advantages",
      "scope": "离子注入、分子键合、薄晶层转移、供体表面修复及再用；不承诺无限复用。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-10",
      "title": "Quality Assurance",
      "url": "https://www.sas-globalwafers.com/en/quality-assurance-en/",
      "publisher": "GlobalWafers",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Strict examination and control：FTIR、Surface Analysis、4-Point-Probe、Spreading Resistance Profiling",
      "scope": "氧碳、表面与电阻率为不同验收项目；不提供基地数值良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-11",
      "title": "Defect Inspection and Review — Wafer Manufacturing",
      "url": "https://www.kla.com/products/wafer-manufacturing/wafer-defect-inspection-review",
      "publisher": "KLA",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "页首正文；Surfscan Unpatterned Wafer Defect Inspection Systems及Applications",
      "scope": "空白晶圆/外延片/SOI缺陷分类与进出厂质量控制；不把缺陷数直接变为芯片电学良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-12",
      "title": "Czochralski Process",
      "url": "https://www.pvatepla.com/products-technologies/crystal-growth/czochralski-process/",
      "publisher": "PVA TePla",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Perfect Silicon；The Process及[A]–[F]；Technical Support；SC-Line",
      "scope": "CZ的热场、籽晶、提拉和旋转控制；半导体与光伏设备用途区分。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-13",
      "title": "Float-Zone Process",
      "url": "https://www.pvatepla.com/products-technologies/crystal-growth/float-zone/",
      "publisher": "PVA TePla",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "The process；Zone Melting Crystal Growth Method；The Technology",
      "scope": "高频局部熔化、供料与籽晶形成单晶；无石英坩埚降低氧污染。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-14",
      "title": "Semiconductor Single Crystal Silicon Ingot Puller",
      "url": "https://www.ferrotec-global.com/tech_1_10.php",
      "publisher": "Ferrotec",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "FT-CZ1200Se/1400Se；Specification表头Semiconductor grade",
      "scope": "半导体级单晶硅提拉设备及真空/加热配套；不推断指定客户供货。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-15",
      "title": "Electronics",
      "url": "https://www.hscpoly.com/markets-technologies/electronics/",
      "publisher": "Hemlock Semiconductor",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Electronics正文第2–3段",
      "scope": "用于半导体晶圆的超高纯多晶硅业务；不采用供应商数量与领先性宣传。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-16",
      "title": "High-purity Polycrystalline Silicon",
      "url": "https://www.tokuyama.co.jp/eng/products/electronic_materials/polysilicon.html",
      "publisher": "Tokuyama",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Product overview：Grades、General applications；Special characteristics",
      "scope": "供硅片使用的多晶硅及块料/棒料形态；纯度数字属于厂商规格。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-17",
      "title": "Semiconductor Substrates and Materials",
      "url": "https://www.axt.com/products",
      "publisher": "AXT",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Product Overview；Indium Phosphide；Gallium Arsenide",
      "scope": "InP/GaAs衬底和VGF长晶；材料衬底不等于激光器或成品芯片。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-18",
      "title": "SiC Wafer Portfolio",
      "url": "https://www.sksiltron.com/m/en/wafer/waferC.do",
      "publisher": "SK siltron",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "4H SiC substrates；SiC epitaxial wafer",
      "scope": "SiC由物理气相输运长晶，可再加SiC外延；与元素Si路线分开。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-19",
      "title": "シリコンウエハーができるまで／製品案内",
      "url": "https://www.shinetsu.co.jp/seh/shirakawa/product/",
      "publisher": "Shin-Etsu Handotai",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "ケイ石；還元／精製；蒸留／精製；シリコンウエハー；半導体チップ",
      "scope": "石英的碳还原；最终清洗、密封出货与后续器件制造的边界。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-20",
      "title": "Three-Dimensional analysis of melt flow and oxygen transport in 300 mm Czochralski silicon growth under a transverse magnetic field",
      "url": "https://www.sciencedirect.com/science/article/pii/S0022024826001570",
      "publisher": "Journal of Crystal Growth / Elsevier",
      "published": "2026-08-15",
      "accessed": "2026-10-24",
      "locator": "Abstract；DOI 10.1016/j.jcrysgro.2026.128640",
      "scope": "仅可核摘要：磁场、熔液流动与氧输运的联系。源站全文访问受限，不引用数值模拟细节。",
      "access": "excerpt",
      "kind": "paper"
    },
    {
      "id": "w-21",
      "title": "Crystal Growth Technologies",
      "url": "https://www.pvatepla.com/products-technologies/crystal-growth/",
      "publisher": "PVA TePla",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Czochralski、Float zone、Physical Vapor Transport、Vertical Gradient Freeze四卡片",
      "scope": "Si长晶与SiC/AlN、化合物半导体长晶的设备路线分类。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-22",
      "title": "白河工場案内",
      "url": "https://www.shinetsu.co.jp/seh/shirakawa/factory/",
      "publisher": "Shin-Etsu Handotai",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "トップメッセージ；白河工場概要；信越半導体沿革2000年代",
      "scope": "白河制造主体、地址、单晶/抛光/外延一贯制造及300mm历史生产节点。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-23",
      "title": "Corporate Data — Plants",
      "url": "https://www.sumcosi.com/english/corporate/profile.html",
      "publisher": "SUMCO",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Plants：Kyushu Factory (Nagahama)",
      "scope": "公司业务及九州长浜厂地址；不外推本厂产品直径。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-24",
      "title": "Site Data (2025 results)",
      "url": "https://www.sumcosi.com/english/csr/sitedata.html",
      "publisher": "SUMCO",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Kyushu Factory (Nagahama)：Scope of business",
      "scope": "2025年度仍列示长浜硅片设计、开发和制造；ISO/环境数据不是良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-25",
      "title": "Overview / Locations",
      "url": "https://www.gw-semi.com/overview-locations/",
      "publisher": "GlobalWafers",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Sherman — GlobalWafers America；St. Peters：Products及地址",
      "scope": "GWA的300mm抛光/外延与St. Peters的200/300mm SOI；目录旧计划文字不作当前状态。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-26",
      "title": "GlobalWafers Reports Q2 2026 Results",
      "url": "https://www.sas-globalwafers.com/en/gwc_news_en_20260804/",
      "publisher": "GlobalWafers",
      "published": "2026-08-04",
      "accessed": "2026-10-24",
      "locator": "全球扩产进展段：Sherman、St. Peters及产能爬坡",
      "scope": "GWA多家Tier-1资格认证与STP新12英寸SOI逐步量产；不推算满产或数值良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-27",
      "title": "Sites — Portland",
      "url": "https://www.siltronic.com/en/our-company/sites.html",
      "publisher": "Siltronic",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Portland正文两段；Siltronic Corporation地址",
      "scope": "Portland生产200mm抛光/外延片，使用德国所长晶体；并非此厂全链长晶。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-28",
      "title": "Domestic Offices",
      "url": "https://www.sksiltron.com/en/company/office01.do",
      "publisher": "SK siltron",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Gumi Plant 3 (Head Office)",
      "scope": "龟尾3厂300mm长晶/晶圆加工及200/300mm外延的厂级范围和地址。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-29",
      "title": "Si Wafer",
      "url": "https://www.sksiltron.com/en/wafer/wafer.do",
      "publisher": "SK siltron",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Semiconductor Value Chain；Polished Wafer；Epitaxial Wafer",
      "scope": "硅抛光片与外延片产品及材料/电路制造的不同阶段；不与美国CSS的SiC混用。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-30",
      "title": "上海新昇半导体科技有限公司",
      "url": "https://www.zingsemi.com/",
      "publisher": "上海新昇",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "公司介绍；联系我们",
      "scope": "300mm硅片业务与上海临港云水路1000号地址。页面直接访问超时，证据限官方索引摘录。",
      "access": "excerpt",
      "kind": "official"
    },
    {
      "id": "w-31",
      "title": "上海新昇02专项项目顺利通过正式验收",
      "url": "https://www.zingsemi.com/news/%E4%B8%8A%E6%B5%B7%E6%96%B0%E6%98%8702%E4%B8%93%E9%A1%B920-14nm%E9%A1%B9%E7%9B%AE%E9%A1%BA%E5%88%A9%E9%80%9A%E8%BF%87%E6%AD%A3%E5%BC%8F%E9%AA%8C%E6%94%B6/",
      "publisher": "上海新昇",
      "published": "2021-06-27",
      "accessed": "2026-10-24",
      "locator": "项目成果段；验收结论段",
      "scope": "2021年300mm抛光/外延成套工艺产业化验收与量产；不沿用历史产能为2026数值。直接打开超时。",
      "access": "excerpt",
      "kind": "official"
    },
    {
      "id": "w-32",
      "title": "领先布局",
      "url": "https://www.zhlxsemicon.com/about.html",
      "publisher": "中环领先",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "产业布局：江苏宜兴；历史沿革2020；页尾地址",
      "scope": "宜兴8–12英寸研发/规模制造、300mm抛光片历史量产；70万片/月为规划而非实际产能。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-33",
      "title": "中环领先半导体科技股份有限公司无形资产市场价值资产评估报告",
      "url": "https://static.cninfo.com.cn/finalpage/2026-07-03/1225407419.PDF",
      "publisher": "中环领先 / 巨潮资讯",
      "published": "2026-07-03",
      "accessed": "2026-10-24",
      "locator": "正文p4（PDF第7页）：企业概况",
      "scope": "现名、曾用名和宜兴地址；报告日2026-07-02、披露日2026-07-03。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "w-34",
      "title": "Electronic Materials Business Division Business Briefings",
      "url": "https://www.tokuyama.co.jp/eng/ir/pdf/202401_zigyo_e.pdf",
      "publisher": "Tokuyama",
      "published": "2024-09-20",
      "accessed": "2026-10-24",
      "locator": "封面2024-09-20；p8纯度要求；p10 Polycrystalline Silicon Manufacturing Process",
      "scope": "关键杂质按元素控制；TCS合成/蒸馏、沉积硅棒、破碎/清洗/分析。文件名不是发布日期。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-35",
      "title": "Annual Report 2023",
      "url": "https://recsilicon.com/wp-content/uploads/2024/03/rec-silicon-annual-report-2023.pdf",
      "publisher": "REC Silicon",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "印刷p9：Moses Lake — fluidized bed reactor",
      "scope": "历史FBR实例的热硅烷流化、颗粒沉积与连续出料。该例为光伏级，不用于推断2026工厂状态或半导体级认证。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "w-36",
      "title": "Products — MDZ Flatness and Nanotopography",
      "url": "https://www.gw-semi.com/products/",
      "publisher": "GlobalWafers",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "MDZ Flatness and Nanotopography；Summary and References",
      "scope": "平坦度、自由态纳米形貌及表面粗糙度的不同尺度；不采用页面宣传的良率增幅。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-nvidia-b200",
      "title": "NVIDIA Blackwell Platform Arrives to Power a New Era of Computing",
      "url": "https://nvidianews.nvidia.com/news/nvidia-blackwell-platform-arrives-to-power-a-new-era-of-computing/",
      "publisher": "NVIDIA",
      "published": "2024-03-18",
      "accessed": "2026-10-23",
      "locator": "Blackwell Innovations / World’s Most Powerful Chip；GB200段",
      "scope": "B200所属数据中心Blackwell的TSMC 4NP与双裸片；不外推到RTX或其他代际。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-amd-epyc-arch",
      "title": "5th Gen AMD EPYC Processor Architecture",
      "url": "https://docs.amd.com/api/khub/documents/UIqhAbjRhgnzgzzdVU4pUw/content",
      "publisher": "AMD",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "First Edition March 2025；印刷pp.5–7，Decoupled Innovation Paths / Simplified Production",
      "scope": "Zen 5、Zen 5c、I/O die工艺拆分及小裸片筛选机制；只采用相关章节。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-amd-epyc-sku",
      "title": "AMD EPYC 9005 Series Server CPUs Data Sheet",
      "url": "https://www.amd.com/content/dam/amd/en/documents/epyc-business-docs/datasheets/amd-epyc-9005-series-processor-datasheet.pdf",
      "publisher": "AMD",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "PID 242937604-G，November 2025；p.2型号表9965与9755行",
      "scope": "9755对应Zen 5、9965对应Zen 5c；PDF元数据误标4004，正文标题和表格为9005。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-amd-10k",
      "title": "AMD FY2025 Form 10-K",
      "url": "https://ir.amd.com/financial-information/sec-filings/content/0000002488-26-000018/amd-20251227.htm",
      "publisher": "AMD / SEC",
      "published": "2026-02-04",
      "accessed": "2026-10-23",
      "locator": "Manufacturing Arrangements；Risk Factors中7nm-and-lower CPU/GPU段",
      "scope": "TSMC、GF等制造分工与良率风险；公司级披露与产品级架构交叉核对，非逐厂分配表。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "l-amd-mi300x",
      "title": "AMD Instinct MI300X Accelerator",
      "url": "https://www.amd.com/en/products/accelerators/instinct/mi300/mi300x.html",
      "publisher": "AMD",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Specifications / Product Details / Lithography",
      "scope": "MI300X具体产品的TSMC 5nm与6nm；页面列产品发布日期2023-12-06，非网页发布日期。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-amd-cdna3",
      "title": "Introducing AMD CDNA 3 Architecture",
      "url": "https://www.amd.com/content/dam/amd/en/documents/instinct-tech-docs/white-papers/amd-cdna-3-white-paper.pdf",
      "publisher": "AMD",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "印刷pp.2–5，Figures 1–3；p.10 I/O dies",
      "scope": "MI300X八个XCD、四个IOD及5nm/6nm堆叠；不采用宣传性性能比较。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-intel-idm",
      "title": "Expanding Intel’s Foundry Partnerships: A Critical Piece of IDM 2.0",
      "url": "https://www.intel.com/content/www/us/en/newsroom/opinion/expanding-foundry-partnerships-critical-piece.html",
      "publisher": "Intel",
      "published": "2021-08-19",
      "accessed": "2026-10-23",
      "locator": "modular approach段；Meteor Lake compute tile与supporting tiles段",
      "scope": "2021年已披露的混合制造方案：Meteor Lake计算tile Intel 4、部分支持tile TSMC；当时为计划，配合后续型号手册阅读。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-intel-handbook",
      "title": "Edge AI Handbook: A Practical Approach",
      "url": "https://cdrdv2-public.intel.com/873131/873131_Edge_AI_Handbook_Rev1.0.pdf",
      "publisher": "Intel",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "January 2026，Document 873131-1.0；印刷p.17 Table 14",
      "scope": "155H/Meteor Lake与288V/Lunar Lake的型号、上市季度、Lithography字段。该表不是完整逐tile BOM。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-intel-lunar",
      "title": "Fact Sheet: Intel Unveils Lunar Lake Architecture",
      "url": "https://download.intel.com/newsroom/2024/client-computing/Lunar-Lake-Architecture-Fact-Sheet.pdf",
      "publisher": "Intel",
      "published": "2024-06-04",
      "accessed": "2026-10-23",
      "locator": "p.1 Lunar Lake Overview",
      "scope": "两个tile经Foveros连接并带封装内存的架构；此文不披露各tile晶圆代工节点。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-tpu-v4",
      "title": "TPU v4: An Optically Reconfigurable Supercomputer for Machine Learning with Hardware Support for Embeddings",
      "url": "https://arxiv.org/pdf/2304.01433",
      "publisher": "Google作者 / ISCA 2023",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "ISCA 2023；DOI 10.1145/3579371.3589350；印刷p.7 Table 4",
      "scope": "TPU v4的7nm与2020生产部署；所核论文未点名晶圆代工方或厂区。",
      "access": "full-text",
      "kind": "paper"
    },
    {
      "id": "l-broadcom-google",
      "title": "Broadcom Form 8-K — Google TPU agreements",
      "url": "https://investors.broadcom.com/static-files/c906d370-921b-4bc2-bb7b-57877dfcf1ae",
      "publisher": "Broadcom / SEC",
      "published": "2026-04-06",
      "accessed": "2026-10-23",
      "locator": "p.2 Item 8.01第一段",
      "scope": "未来TPU代际开发和供应协议；不是TPU v4晶圆制造披露，也未指定foundry。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "l-aws-trn3",
      "title": "Announcing Amazon EC2 Trn3 UltraServers for faster, lower-cost generative AI training",
      "url": "https://aws.amazon.com/about-aws/whats-new/2025/12/amazon-ec2-trn3-ultraservers/",
      "publisher": "AWS",
      "published": "2025-12-02",
      "accessed": "2026-10-23",
      "locator": "公告首段",
      "scope": "Trainium3为AWS首款3nm AI芯片、Trn3 UltraServers GA；本公告未披露晶圆代工方。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-tsmc-aws-cowos",
      "title": "TSMC Launches OIP 3DFabric Alliance to Accelerate 3D IC Ecosystem Innovation",
      "url": "https://pr.tsmc.com/system/files/newspdf/attachment/d2242e00cdbb543ad4dfdec68b3c3db2dd41ee5e/1026%20OIP%203D%20Fabric%20Alliance_final%20_wmn.pdf",
      "publisher": "TSMC",
      "published": "2022-10-27",
      "accessed": "2026-10-23",
      "locator": "p.2 AWS / Nafea Bshara引述",
      "scope": "当时Trainium与TSMC CoWoS封装合作进入生产；没有Trainium3节点或其晶圆厂分配。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-tsmc-20f",
      "title": "TSMC 2025 Form 20-F",
      "url": "https://investor.tsmc.com/sites/ir/sec-filings/2025_20F%20Report.pdf",
      "publisher": "TSMC / SEC",
      "published": "2026-04-16",
      "accessed": "2026-10-23",
      "locator": "印刷pp.15–16 Semiconductor Manufacturing Capacity and Technology及工厂表脚注；p.25 TSMC Arizona",
      "scope": "截至2026-02-28在营厂名单；节点栏截至2025年末。选取Fab 15/16/18/21，不把工艺能力当客户产品分厂证据。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "l-tsmc-arizona",
      "title": "TSMC Arizona",
      "url": "https://www.tsmc.com/static/abouttsmcaz/index.htm",
      "publisher": "TSMC",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Key Milestones / First Fab、Second Fab",
      "scope": "第一厂N4于2024Q4 HVM；第二厂N3目标2027下半年。只引用这些带明确时期的里程碑。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-intel-10k",
      "title": "Intel FY2025 Form 10-K",
      "url": "https://www.intc.com/filings-reports/all-sec-filings/content/0000050863-26-000011/intc-20251227.htm",
      "publisher": "Intel / SEC",
      "published": "2026-01-23",
      "accessed": "2026-10-23",
      "locator": "印刷p.12 Manufacturing",
      "scope": "Arizona Intel 18A爬坡；Ohio放缓、Germany fab和Poland封测扩建计划终止。运营、在建与取消分别标记。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "l-intel-fab52",
      "title": "Intel Unveils Panther Lake Architecture: First AI PC Platform Built on 18A",
      "url": "https://www.intel.com/content/www/us/en/newsroom/news/client-computing/intel-unveils-panther-lake-architecture-first-ai-pc-platform-built-on-18a.html",
      "publisher": "Intel",
      "published": "2025-10-09",
      "accessed": "2026-10-23",
      "locator": "News Highlights及Fab 52段",
      "scope": "Fab 52位于Chandler Ocotillo，运营与18A爬坡；公告当时将后续HVM列为预期，不改写为精确完成日。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-intel-fab34",
      "title": "Intel to Repurchase 49% Equity Interest in Ireland Fab Joint Venture",
      "url": "https://www.intel.com/content/www/us/en/newsroom/news/corporate/intel-repurchase-49-equity-interest-ireland-fab-joint-venture.html",
      "publisher": "Intel",
      "published": "2026-04-01",
      "accessed": "2026-10-23",
      "locator": "正文末段 Ireland and Fab 34 remain central / high-volume semiconductor fabrication facility",
      "scope": "Fab 34在爱尔兰采用Intel 4和Intel 3进行高量产，产品例为Core Ultra与Xeon 6。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-intel-d1x",
      "title": "High NA EUV at Intel",
      "url": "https://www.intel.com/content/www/us/en/newsroom/resources/intel-high-na-euv.html",
      "publisher": "Intel",
      "published": "2024-04-18",
      "accessed": "2026-10-24",
      "locator": "Images首项D1X/Hillsboro；Video说明D1X test manufacturing factory",
      "scope": "D1X位于Oregon Hillsboro，为测试制造/工艺研发厂，2024年High-NA EUV安装验证；不是商业产品厂级良率报告。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-samsung-v1",
      "title": "Samsung Electronics Begins Mass Production at New EUV Manufacturing Line",
      "url": "https://news.samsung.com/global/samsung-electronics-begins-mass-production-at-new-euv-manufacturing-line",
      "publisher": "Samsung",
      "published": "2020-02-20",
      "accessed": "2026-10-23",
      "locator": "V1量产正文；Global manufacturing sites表",
      "scope": "Hwaseong V1的2020年7/6nm移动芯片量产记录、12英寸；3nm在此文是后续计划。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-samsung-austin",
      "title": "History — Samsung Austin Semiconductor",
      "url": "https://semiconductor.samsung.com/sas/company/history/",
      "publisher": "Samsung",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "2009、2011、2013、2015、2017、2026时间线",
      "scope": "Austin厂从300mm、Mobile SoC到28/14nm及foundry业务的历史；不把Taylor项目并入Austin在营产线。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-umc-12a",
      "title": "UMC Overview",
      "url": "https://www.umc.com/en/About/about_overview",
      "publisher": "UMC",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Diversified Manufacturing / Fab 12A",
      "scope": "台南Fab 12A自2002年量产、14/28nm；作为多期厂区计一个代表条目。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-gf-malta",
      "title": "Malta, New York Manufacturing",
      "url": "https://gf.com/manufacturing/malta/",
      "publisher": "GlobalFoundries",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Malta制造基地简介",
      "scope": "Malta实际制造基地；只用于厂址及运营角色，不把规划封装中心算为现役逻辑Fab。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-gf-12lp",
      "title": "GlobalFoundries and BAE Systems Collaborate on Semiconductors for Space",
      "url": "https://gf.com/news-and-events/news/globalfoundries-and-bae-systems-collaborate-on-semiconductors-for-space/",
      "publisher": "GlobalFoundries",
      "published": "2025-11-19",
      "accessed": "2026-10-23",
      "locator": "正文前3段 / Malta与high-volume commercial 12LP",
      "scope": "Malta生产的12LP FinFET工艺平台及BAE RH12方案。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-smic-beijing",
      "title": "中芯北京环境信息公开方案",
      "url": "https://www.smics.com/uploads/bjhjxxfa.pdf",
      "publisher": "中芯国际",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "p.1 企业基本情况与表1",
      "scope": "企业名、北京经济技术开发区文昌大道18号、2004年9月投运、12英寸IC。web读取403后，以本机HTTPS成功获取PDF并提取p.1正文核实；未补填工艺节点。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "l-smic-annual",
      "title": "中芯国际2025年年度报告",
      "url": "https://static.cninfo.com.cn/finalpage/2026-03-27/1225037057.PDF",
      "publisher": "中芯国际 / 巨潮资讯",
      "published": "2026-03-27",
      "accessed": "2026-10-23",
      "locator": "印刷pp.34、80、205；主要子公司、环境披露名单、业务性质",
      "scope": "中芯北京与中芯北方/京城是不同主体；中芯北京制造销售半导体的持续主体核对，非某GPU代工证明。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "l-intel-fab34-location",
      "title": "Intel Ireland Begins Intel 4 Production (Replay)",
      "url": "https://www.intel.com/content/www/us/en/newsroom/news/ireland-begins-intel-4-production-livestream-replay.html",
      "publisher": "Intel",
      "published": "2023-09-29",
      "accessed": "2026-10-24",
      "locator": "网页正文首段 On Sept. 29, 2023 / Fab 34 in Leixlip",
      "scope": "仅读回放页正文，用于Fab 34地点与2023 Intel 4量产事件；未观看回放视频。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ram",
      "title": "DRAM overview and FAQs",
      "url": "https://semiconductor.samsung.com/dram/",
      "publisher": "Samsung Semiconductor",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "FAQ：Is DRAM the same as RAM?；Which memory technology is better, DRAM or SRAM?；产品分类",
      "scope": "SRAM/DRAM单元与用途、DDR/LPDDR/HBM的分类。未给特定厂区良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-memory-ip",
      "title": "Memory Compilers IP",
      "url": "https://www.synopsys.com/designware-ip/memories-logic-libraries/sram-memory-compilers.html",
      "publisher": "Synopsys",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Overview；Datasheets & Highlights；Integrated memory test and repair",
      "scope": "嵌入式SRAM编译器、代工工艺适配、PVT及测试修复；不证明某CPU/GPU采用该供应商IP。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-gsi",
      "title": "GSI Technology FY2026 Form 10-K",
      "url": "https://www.sec.gov/Archives/edgar/data/1126741/000110465926070962/gsit-20260331x10k.htm",
      "publisher": "GSI Technology / SEC",
      "published": "2026-06-05",
      "accessed": "2026-10-23",
      "locator": "Item 1，Manufacturing，文内pp.13–14",
      "scope": "独立SRAM产品和TSMC代工、工艺与封测；只读相关业务和制造章节。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-samsung-p2",
      "title": "Samsung Begins Mass Production of 16Gb LPDDR5 DRAM at World’s Largest Semiconductor Line",
      "url": "https://news.samsung.com/us/16gb-lpddr5-dram-largest-semiconductor/",
      "publisher": "Samsung Electronics",
      "published": "2020-08-31",
      "accessed": "2026-10-23",
      "locator": "开头三段；Expanding Manufacturing Capacity in Pyeongtaek Complex",
      "scope": "平泽P2已投产的历史证据：1z EUV LPDDR5。不能将该代际视为2026全厂唯一产品。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-samsung-hbm4",
      "title": "Samsung Ships Industry-First Commercial HBM4 With Ultimate Performance for AI Computing",
      "url": "https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing",
      "publisher": "Samsung Electronics",
      "published": "2026-02-12",
      "accessed": "2026-10-23",
      "locator": "正文首三段及logic base die说明",
      "scope": "公司宣布HBM4商业出货、1c DRAM与4nm逻辑底座；stable yields没有给出厂区/型号/期间的百分比。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-sk-tsmc",
      "title": "SK hynix Partners with TSMC to Strengthen HBM Technological Leadership",
      "url": "https://news.skhynix.com/en/sk-hynix-partners-with-tsmc-to-strengthen-hbm-technological-leadership/",
      "publisher": "SK hynix",
      "published": "2024-04-19",
      "accessed": "2026-10-23",
      "locator": "正文base die、TSV定义、CoWoS定义与合作段落",
      "scope": "HBM4底座与DRAM核心裸片的分工；公告当时为合作及2026目标，不将全部HBM归为TSMC生产。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-sk-stack",
      "title": "From HBM to eSSD: How SK hynix is charting the future of full-stack memory",
      "url": "https://news.skhynix.com/en/hbm-to-essd/",
      "publisher": "SK hynix",
      "published": "2026-07-08",
      "accessed": "2026-10-23",
      "locator": "AI-DRAM portfolio；Production and packaging infrastructure",
      "scope": "DDR5、LPDDR5X及M15X DRAM与P&T7封装的不同角色。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-sk-m15x",
      "title": "SK hynix Announces 2Q26 Financial Results",
      "url": "https://news.skhynix.com/en/q2-2026-business-results/",
      "publisher": "SK hynix",
      "published": "2026-07-29",
      "accessed": "2026-10-23",
      "locator": "产能投资段：accelerating the mass production schedule for M15X",
      "scope": "只取M15X量产排程加速及清洁室投资说明；未采用新闻稿财务数字或推断实际月产能。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-sk-muf",
      "title": "How MR-MUF’s Heat Control Breakthrough Elevated HBM to New Heights",
      "url": "https://news.skhynix.com/en/rulebreaker-revolutions-mr-muf-unlocks-hbm-heat-control/",
      "publisher": "SK hynix",
      "published": "2024-07-30",
      "accessed": "2026-10-23",
      "locator": "正文首段后的MR-MUF及HBM定义、热管理讨论",
      "scope": "回流焊连接、EMC填充和堆叠散热；不作为独立良率百分比证据。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-micron26",
      "title": "Micron FY2026 Form 10-K",
      "url": "https://www.sec.gov/Archives/edgar/data/723125/000072312526000023/mu-20260903.htm",
      "publisher": "Micron / SEC",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Item 1 Products pp.7–10；Manufacturing/Capital Investments p.60；Note 15政府激励",
      "scope": "DRAM/HBM/LPDDR产品与广岛扩建：2026年7月开工，预计2028末初始产出；仅阅读这些相关章节。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-cxmt",
      "title": "公司与发展历程",
      "url": "https://www.cxmt.com/about.html",
      "publisher": "长鑫存储",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "公司简介；2016–2022发展历程",
      "scope": "IDM定位、合肥基地工程样品和商业化历史；不把总部地址当作新厂产能证据。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-cxmt-g5",
      "title": "长鑫存储第五代技术平台正式量产 实现微缩工艺新突破",
      "url": "https://www.cxmt.com/news/info_97.html",
      "publisher": "长鑫存储",
      "published": "2026-09-20",
      "accessed": "2026-10-23",
      "locator": "核心工艺实现突破性创新；新一代产品性能跃升；DPW脚注",
      "scope": "G5与24Gb LPDDR5X量产自述、四重曝光及电容结构；DPW提升不是成品良率，也不指明在哪个厂生产。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ymtc",
      "title": "Company Profile",
      "url": "https://www.ymtc.com/en/aboutus.html",
      "publisher": "YMTC",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Company Vision；Milestones 2018–2025",
      "scope": "已读搜索返回的官网正文节选：武汉IDM、3D NAND及量产历史。直接打开返回验证页，未宣称通读官网。",
      "access": "excerpt",
      "kind": "official"
    },
    {
      "id": "s-ms-xtacking",
      "title": "Yangtze Memory Technologies Introduces New 3D NAND Architecture — Xtacking",
      "url": "https://www.ymtc.com/en/news/35.html",
      "publisher": "YMTC",
      "published": "2018-08-06",
      "accessed": "2026-10-23",
      "locator": "搜索返回官网正文中periphery circuits与array wafer段",
      "scope": "分开加工CMOS外围与阵列晶圆再电连接的架构；直接页面验证阻断，证据范围仅为可读正文节选。",
      "access": "excerpt",
      "kind": "official"
    },
    {
      "id": "s-ms-k2",
      "title": "Kioxia and Sandisk Begin Production of 10th-Generation 3D Flash Memory Products at Kitakami Plant Fab2",
      "url": "https://www.kioxia.com/en-jp/about/news/2026/20260703-2.html",
      "publisher": "Kioxia / Sandisk",
      "published": "2026-07-03",
      "accessed": "2026-10-23",
      "locator": "正文第1–5段及Kioxia Iwate负责人引述",
      "scope": "K2运营主体、8代与10代生产阶段、CBA；不将begin production升级为所有产品全面达产。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-jv",
      "title": "Kioxia and Sandisk Extend Yokkaichi Joint Venture Agreement Through 2034",
      "url": "https://apac.kioxia.com/en-apac/about/news/2026/20260130-1.html",
      "publisher": "Kioxia / Sandisk",
      "published": "2026-01-30",
      "accessed": "2026-10-23",
      "locator": "合资期限、manufacturing services及最后的co-development/joint investments段",
      "scope": "四日市及北上合资框架、共同研发投资与Kioxia制造服务；不将SanDisk说成独自运营整个工厂。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-sandisk-split",
      "title": "Sandisk Corporate Separation and Brand FAQ",
      "url": "https://www.sandisk.com/sandisk-separation-faqs",
      "publisher": "Sandisk",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "What does the separation mean for Sandisk?",
      "scope": "2025-02-24完成与Western Digital分拆；品牌名不能单独证明现有制造主体。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-intel-nand",
      "title": "Intel FY2025 Form 10-K — NAND Memory Business",
      "url": "https://www.sec.gov/Archives/edgar/data/50863/000005086326000011/intc-20251227.htm",
      "publisher": "Intel / SEC",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Note 10：Acquisitions and Divestitures，NAND Memory Business",
      "scope": "2021第一阶段及2025-03-27第二阶段交割已完成；仅阅读该出售章节。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-solidigm",
      "title": "Introducing Solidigm — A Market Leader in NAND Flash Technology",
      "url": "https://news.solidigm.com/en-WW/212941-introducing-solidigm-a-market-leader-in-nand-flash-technology/",
      "publisher": "Solidigm",
      "published": "2021-12-30",
      "accessed": "2026-10-23",
      "locator": "开头三段",
      "scope": "Intel SSD业务形成SK hynix美国子公司；不是Kioxia–SanDisk合资企业。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-micron-cua",
      "title": "First to market, second to none: The world’s first 232-layer NAND",
      "url": "https://www.micron.com/about/blog/memory/nand/first-to-market-second-to-none-the-worlds-first-232-layer-nand",
      "publisher": "Micron",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Building up, not out；Featuring more performance, better QoS",
      "scope": "以2022年232层产品解释CuA与多plane；只作为工艺原理历史例子，不代表Micron当前最高层数。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ymtc-permit",
      "title": "长江存储国家存储器基地项目（一期）规划验收合格证",
      "url": "https://spxx.zrzyhgh.wuhan.gov.cn/showSgsJyh.asp?cid=2255&instanceID=SX20190802005873&type=1",
      "publisher": "武汉市自然资源和规划局",
      "published": "2019-07-29",
      "accessed": "2026-10-24",
      "locator": "行政相对人、项目名称、许可决定日期和许可机关",
      "scope": "武汉基地一期的主体及规划验收；规划验收不等于给出晶圆产能或产品良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ti-sm1",
      "title": "Texas Instruments begins production at its newest 300mm semiconductor manufacturing facility in Sherman, Texas",
      "url": "https://www.ti.com/about-ti/newsroom/news-releases/2025/texas-instruments-begins-production-at-its-newest-300mm-semiconductor-manufacturing-facility-in-sherman-texas.html",
      "publisher": "Texas Instruments",
      "published": "2025-12-17",
      "accessed": "2026-10-23",
      "locator": "What’s new；Why it matters；TI in Sherman",
      "scope": "SM1已经投产、按需求爬坡；四厂总体规划不等于四厂全部投产。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ti-ar",
      "title": "Texas Instruments 2025 Annual Report",
      "url": "https://investor.ti.com/static-files/fc9d9346-cf77-40db-902a-e9961e9c5736",
      "publisher": "Texas Instruments",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "PDF p.13，Manufacturing；PDF p.2致股东信",
      "scope": "TI自厂＋选择性外包制造，以及2030自制晶圆目标不是当前比例；只读这些章节。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-adi-pcn",
      "title": "PCN 26_0033 — Qualification of Wafer Fabrication Site Analog Devices Limerick for XF65 Products",
      "url": "https://www.analog.com/media/en/PCN/ADI_PCN_26_0033_Rev_-_Form.pdf",
      "publisher": "Analog Devices",
      "published": "2026-03-06",
      "accessed": "2026-10-23",
      "locator": "PDF pp.1、3：生效日、Description Of Change、Appendix A",
      "scope": "Limerick XF65流程及AD8208/AD8209/AD821x等受影响型号；XF65不由名称推断为65nm逻辑节点。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-adi-tsmc",
      "title": "Analog Devices Strengthens Capacity and Resiliency Through Expanded Partnership with TSMC",
      "url": "https://investor.analog.com/news-releases/news-release-details/analog-devices-strengthens-capacity-and-resiliency-through",
      "publisher": "Analog Devices",
      "published": "2024-02-22",
      "accessed": "2026-10-23",
      "locator": "正文前四段及副标题",
      "scope": "ADI通过TSMC/JASM取得长期晶圆容量安排，40nm及更小节点；不证明已完成每款产品量产导入。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ifx-villach",
      "title": "Infineon Austria Company Presentation",
      "url": "https://www.infineon.com/assets/row/public/documents/regions/austria/ifat-company-presentation-en.pdf",
      "publisher": "Infineon Austria",
      "published": "2026-08-06",
      "accessed": "2026-10-23",
      "locator": "PDF pp.11、13–15，Innovation Fab Villach",
      "scope": "Si/SiC/GaN角色、300mm薄硅及GaN首批客户产品时间；是公司自述，不披露厂区型号良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ifx-gan",
      "title": "Infineon succeeds in developing world’s first 300 mm power gallium nitride wafer technology",
      "url": "https://www.infineon.com/assets/row/public/documents/corporate/press/press-releases/business-financial-press/2024/worlds-first-300-mm-power-gan-technology.pdf",
      "publisher": "Infineon",
      "published": "2024-09-11",
      "accessed": "2026-10-23",
      "locator": "PDF p.2，integrated pilot line及existing 300mm silicon段",
      "scope": "2024 Villach试验线证据与设备兼容策略，不能停留在2024状态而忽略2026资料。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ifx-amkor",
      "title": "Infineon and Amkor deepen partnership and strengthen supply chain in Europe",
      "url": "https://www.infineon.com/press-release/2024/infxx202404-087",
      "publisher": "Infineon / Amkor",
      "published": "2024-04-08",
      "accessed": "2026-10-23",
      "locator": "正文前三段",
      "scope": "Porto专用封装测试中心合作、Amkor运营与Infineon工程支持；公告预计2025启动，不单凭此认定实际开线日。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-ifx-manufacturing",
      "title": "Manufacturing at Infineon — GSA Asia Pacific Executive Forum",
      "url": "https://www.gsaglobal.org/events/wp-content/uploads/sites/10/2025/01/sp2-alexander-gorski-infienon-2025-11-05_gsa_apef_tw_keynote_final.pdf",
      "publisher": "Infineon / GSA",
      "published": "2025-11-05",
      "accessed": "2026-10-23",
      "locator": "PDF pp.8、11，制造网络及supplier partnerships",
      "scope": "自有制造与foundry/OSAT伙伴并存；只读制造与伙伴章节，不取营销优越性或失效率为良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-st-bcd",
      "title": "BCD: Bipolar-CMOS-DMOS",
      "url": "https://www.st.com/content/st_com/en/about/innovation-and-technology/bcd.html",
      "publisher": "STMicroelectronics",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "BCD: a key technology for power integrated circuits；三类器件；平台清单",
      "scope": "同片集成模拟、逻辑与功率器件、不同电压与节点的组合；平台目录不证明特定客户采用。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-st-network",
      "title": "Manufacturing strategic programs",
      "url": "https://www.st.com/content/st_com/en/about/manufacturing-at-st/our-strategic-programs.html",
      "publisher": "STMicroelectronics",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Advanced 300mm silicon；Advanced 200mm silicon carbide；Maintaining supply continuity and quality",
      "scope": "Agrate模拟/BCD、Catania 200mm SiC升级、GaN-on-silicon及迁移认证；页面未标发布日期。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-st-outsourcing",
      "title": "Sustainability at a glance 2025",
      "url": "https://www.st.com/content/dam/aboutus/sustainability/reports/pdf/at-a-glance/st-sustainability-at-a-glance-2025-en.pdf",
      "publisher": "STMicroelectronics",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "PDF p.7，Main steps in our value chain、Outsourcing",
      "scope": "ST外部硅代工及OSAT补充前后段能力，电测分选与封装流程。只读该流程页。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-st-catania",
      "title": "STMicroelectronics to build the world’s first fully integrated silicon carbide facility in Italy",
      "url": "https://newsroom.st.com/media-center/press-item.html/c3262.html",
      "publisher": "STMicroelectronics",
      "published": "2024-05-31",
      "accessed": "2026-10-23",
      "locator": "正文校园流程、投产/达产计划；Additional information",
      "scope": "200mm SiC衬底至器件/模块一体化；2026投产与2033达产为当时目标，不把目标当已兑现。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-on-ar",
      "title": "onsemi FY2025 Form 10-K",
      "url": "https://www.sec.gov/Archives/edgar/data/1097864/000109786426000006/on-20251231.htm",
      "publisher": "onsemi / SEC",
      "published": "2026-02-09",
      "accessed": "2026-10-23",
      "locator": "Resources / Manufacturing and Design Operations，pp.11–12；风险p.17",
      "scope": "Hudson生长SiC晶锭，其他工厂制造晶圆与器件；自有产线与第三方晶圆/封测并存。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-on-sic",
      "title": "Fully Vertically Integrated Silicon Carbide Ecosystem for E-Mobility",
      "url": "https://www.onsemi.com/company/newsroom/blog/automotive/fully-vertically-integrated-silicon-carbide-ecosystem-for-e-mobility",
      "publisher": "onsemi",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "From Crystal to System；defect scanning before and after epitaxial growth",
      "scope": "SiC晶体、衬底、外延、器件和模块分工及缺陷扫描；宣传中的zero defect不作为生产良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-hh-bcd",
      "title": "Hua Hong Semiconductor 2025 Annual Report",
      "url": "https://www.hkexnews.hk/listedco/listconews/sehk/2026/0409/2026040901618_c.pdf",
      "publisher": "Hua Hong Semiconductor / HKEX",
      "published": "2026-04-09",
      "accessed": "2026-10-23",
      "locator": "搜索返回的文内p.38，Directors’ Report：Analog & PM平台",
      "scope": "已读官方年报正文节选：90nm BCD稳定量产、0.18um BCD 120V开发及BCD+eFlash；直接PDF打开失败，未通读。",
      "access": "excerpt",
      "kind": "filing"
    },
    {
      "id": "s-ms-smic-bcd",
      "title": "中芯国际2024年年度报告",
      "url": "https://www.smics.com/uploads/67f640fd/688981.pdf",
      "publisher": "中芯国际",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "搜索返回文内p.16，90nm BCD及8英寸BCD/模拟平台研发项目表",
      "scope": "已读表格节选：低压BCD已量产与90nm研发阶段分开。只作历史平台证据，不宣称2026所有平台达产。",
      "access": "excerpt",
      "kind": "filing"
    },
    {
      "id": "s-ms-gf-ar",
      "title": "GlobalFoundries 2025 Form 20-F",
      "url": "https://www.sec.gov/Archives/edgar/data/1709048/000170904826000022/gfs-20251231.htm",
      "publisher": "GlobalFoundries / SEC",
      "published": null,
      "accessed": "2026-10-24",
      "locator": "Item 4D，文内pp.42–43，manufacturing facilities and key technologies表",
      "scope": "表中300mm Malta的SiPh生产标记；不将Burlington SiGe工艺与Malta Fotonix混同；只读制造/技术章节。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-gf-fotonix",
      "title": "Next-gen GF Fotonix: Redefining Flexibility, Bandwidth Upgrades & Full Turnkey Support",
      "url": "https://gf.com/news-and-events/blog/next-gen-gf-fotonix-redefining-flexibility-bandwidth-upgrades-full-turnkey-support/",
      "publisher": "GlobalFoundries",
      "published": "2025-03-26",
      "accessed": "2026-10-24",
      "locator": "Extreme flexibility；Doubling the bandwidth；Advanced Packaging and Photonics Center",
      "scope": "光子＋RF CMOS或光子单独流程，PDK/TSV/耦合；调制器良率改善没有给出可比百分比。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-gf-ecosystem",
      "title": "GlobalFoundries Announces Next Generation in Silicon Photonics Solutions",
      "url": "https://investors.gf.com/node/7606/pdf",
      "publisher": "GlobalFoundries",
      "published": "2022-03-07",
      "accessed": "2026-10-23",
      "locator": "PDF pp.1–2，合作名单及Customer and Partner support",
      "scope": "GF与Ayar等的具名平台合作，只作为合作事实，不以伙伴名单证明量产订单或独家关系。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-tower-ar",
      "title": "Tower Semiconductor 2025 Form 20-F",
      "url": "https://www.sec.gov/Archives/edgar/data/928876/000117891326002318/zk2635149.htm",
      "publisher": "Tower Semiconductor / SEC",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Item 4C–D，文内pp.36–37，Fab3及组织结构",
      "scope": "Newport Beach Fab3的运营主体、SiPho/SiGe/RF SOI平台；0.80–0.13um是工厂支持范围，非每款光子器件尺寸。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-tower-nvidia",
      "title": "Tower Semiconductor Teams with NVIDIA to Advance AI Infrastructure with 1.6T Data Center Optical Modules",
      "url": "https://towersemi.com/2026/02/05/02052026/",
      "publisher": "Tower Semiconductor",
      "published": "2026-02-05",
      "accessed": "2026-10-23",
      "locator": "正文前五段及NVIDIA负责人引述",
      "scope": "1.6T生态合作与foundry平台角色；不将Tower说成完整光模块品牌或指定采购厂区。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-tsmc-coupe",
      "title": "TSMC Debuts A13 Technology at 2026 North America Technology Symposium",
      "url": "https://pr.tsmc.com/system/files/newspdf/attachment/49337b40ff139d51d533076cf7a945b30e107e07/2026%20Tech%20Symposium%20(E)_Final_wmn.pdf",
      "publisher": "TSMC",
      "published": "2026-04-22",
      "accessed": "2026-10-23",
      "locator": "PDF p.2，TSMC-COUPE条目",
      "scope": "COUPE on substrate的2026生产里程碑计划；不推断具体厂区、客户验收或出货量。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-intel-oci",
      "title": "Intel Demonstrates First Fully Integrated Optical I/O Chiplet",
      "url": "https://www.intel.com/content/www/us/en/newsroom/news/intel-unveils-first-integrated-optical-io-chiplet.html",
      "publisher": "Intel",
      "published": "2024-06-26",
      "accessed": "2026-10-24",
      "locator": "How It Works；About Intel’s Leadership in Silicon Photonics；What’s Next",
      "scope": "PIC/EIC与混合激光集成，2024 OCI为原型；既有可插拔PIC出货不能用来证明OCI已量产。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-lite-eml",
      "title": "EMLs: The Unsung Heroes Powering AI’s Digital Arteries",
      "url": "https://www.lumentum.com/en/blog/emls-unsung-heroes-powering-ais-digital-arteries",
      "publisher": "Lumentum",
      "published": "2026-02-10",
      "accessed": "2026-10-24",
      "locator": "Understanding EML Technology；Reliability Challenges；Lumentum’s Edge",
      "scope": "InP DFB＋EAM结构、外延/热可靠性、具名晶圆厂网络；未披露每个厂区产品分配或良率。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-lite-ar",
      "title": "Lumentum FY2026 Form 10-K",
      "url": "https://www.sec.gov/Archives/edgar/data/1633978/000162828026057358/lite-20260627.htm",
      "publisher": "Lumentum / SEC",
      "published": null,
      "accessed": "2026-10-23",
      "locator": "Item 1 Manufacturing；Item 2 Properties，文内p.39",
      "scope": "自厂/外包制造及2024年7月购买Sagamihara晶圆厂土地楼宇；只读制造和不动产章节。",
      "access": "full-text",
      "kind": "filing"
    },
    {
      "id": "s-ms-lite-els",
      "title": "Lumentum to Demonstrate DWDM ELSFP Laser Module for OCI MSA Applications at ECOC 2026",
      "url": "https://investor.lumentum.com/financial-news-releases/news-details/2026/Lumentum-to-Demonstrate-DWDM-ELSFP-Laser-Module-for-OCI-MSA-Applications-at-ECOC-2026/default.aspx",
      "publisher": "Lumentum",
      "published": "2026-09-21",
      "accessed": "2026-10-24",
      "locator": "正文external laser source段；already in production及initial availability段",
      "scope": "UHP平台已生产，新八波长DWDM ELSFP当时演示、预计2027上半年初始可供；不是同一成熟度。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-cohr-inp",
      "title": "6-inch InP capability bringing unprecedented scale to Photonics",
      "url": "https://www.coherent.com/news/blog/indium-phosphide-wafer-fab",
      "publisher": "Coherent",
      "published": "2024-12-09",
      "accessed": "2026-10-23",
      "locator": "Sherman/Järfälla厂区；Larger InP Wafers；现有产品迁移",
      "scope": "6英寸能力与迁移路线、EML/CW应用；面积和成本改善不转换为良率百分比。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-cohr-chips",
      "title": "Coherent Announces a CHIPS Letter of Intent for $50 Million to Expand Manufacturing Facility",
      "url": "https://ir.coherent.com/node/17061/pdf",
      "publisher": "Coherent",
      "published": "2026-06-16",
      "accessed": "2026-10-24",
      "locator": "PDF p.1，Expanding the Foundation of AI Infrastructure及首段扩建目标",
      "scope": "Sherman已有6英寸量产平台及扩产目标；四倍产能是完成后目标，资金为意向不是已拨付。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-cohr-nist",
      "title": "CHIPS Program Letter of Intent with Coherent to Expand Indium Phosphide Production",
      "url": "https://www.nist.gov/system/files/documents/2026/06/16/CHIPS%20Coherent%20Press%20Release%202026-06-16_Final%20Version.pdf",
      "publisher": "U.S. Department of Commerce / NIST",
      "published": "2026-06-16",
      "accessed": "2026-10-24",
      "locator": "PDF p.1首四段",
      "scope": "政府原件交叉核对Sherman 150mm InP量产设施及扩建；非产品级良率证据。",
      "access": "full-text",
      "kind": "official"
    },
    {
      "id": "s-ms-samsung-nand",
      "title": "Samsung Electronics Begins Industry's First Mass Production of 9th-Gen V-NAND",
      "url": "https://semiconductor.samsung.com/news-events/news/samsung-electronics-begins-industrys-first-mass-production-of-9th-gen-v-nand/",
      "publisher": "Samsung Electronics",
      "published": "2024-04-23",
      "accessed": "2026-10-24",
      "locator": "正文第1段及channel hole etching段（网页行207–213）",
      "scope": "仅核对Samsung有自研量产NAND业务与垂直通道刻蚀角色，不指认2026最新代际或某厂区。",
      "access": "full-text",
      "kind": "official"
    }
  ],
  "nodes": [
    {
      "id": "manufacturing",
      "parentId": null,
      "label": "晶圆与 Fab 制造全景",
      "subtitle": "材料、设计、器件、电路与封装",
      "summary": "先区分制造什么，再看谁设计、谁制造、谁负责封装测试。工厂清单为公开可核的代表性设施。",
      "kind": "domain",
      "claims": [
        {
          "text": "空白晶圆提供半导体基底；晶圆制造在其上形成器件与互连；封装测试把合格裸片组织为可连接、可验证的产品。",
          "kind": "fact",
          "sourceIds": [
            "c-nist",
            "c-process",
            "c-amkor-package"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "models",
      "parentId": "manufacturing",
      "label": "Fab 与经营模式",
      "subtitle": "谁拥有工厂，谁承担设计与制造",
      "summary": "设施名称、企业经营模式与流片阶段属于不同维度。",
      "kind": "domain",
      "claims": [
        {
          "text": "同一企业可以自有制造、外包部分产品并向外提供代工；不能把一个商业标签当成所有产品永远不变的生产分工。",
          "kind": "analysis",
          "sourceIds": [
            "c-fab",
            "c-oip"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "model-fab",
      "parentId": "models",
      "label": "Fab：晶圆制造设施",
      "subtitle": "Factory / fabrication facility",
      "summary": "通常指在晶圆上制造器件和电路的实体设施。",
      "kind": "concept",
      "claims": [
        {
          "text": "Fab是制造设施；Foundry是提供代工服务的业务模式。前者可以属于Foundry，也可以属于生产自有产品的IDM。",
          "kind": "fact",
          "sourceIds": [
            "c-fab"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [
        {
          "title": "设备之外还有过程能力",
          "body": "判断能力还要明确工艺平台、产品认证、过程控制和可持续交付；一座厂房不能自动代表某节点或某产品已量产。",
          "sourceIds": [
            "c-fab",
            "c-kla"
          ]
        }
      ],
      "companyIds": []
    },
    {
      "id": "model-foundry",
      "parentId": "models",
      "label": "Foundry：晶圆代工",
      "subtitle": "制造服务与工艺平台",
      "summary": "接受客户设计，按已支持的工艺制造晶圆。",
      "kind": "concept",
      "claims": [
        {
          "text": "代工不只是接收一份图纸。设计要匹配工艺规则、可用IP和签核流程，客户、EDA/IP伙伴与制造方协同。",
          "kind": "fact",
          "sourceIds": [
            "c-oip",
            "c-eda"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "model-fabless",
      "parentId": "models",
      "label": "Fabless：设计与外包制造",
      "subtitle": "无自有晶圆制造的设计模式",
      "summary": "设计公司可以销售芯片或完整产品，并委托外部厂商制造。",
      "kind": "concept",
      "claims": [
        {
          "text": "Fabless侧重芯片设计，把晶圆制造交给Foundry；这并不排除其负责固件、产品验证、封装方案或供应链管理。",
          "kind": "analysis",
          "sourceIds": [
            "c-fab",
            "c-oip"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "model-idm",
      "parentId": "models",
      "label": "IDM：设计与制造结合",
      "subtitle": "Integrated device manufacturer",
      "summary": "拥有自有产品设计与晶圆制造能力。",
      "kind": "concept",
      "claims": [
        {
          "text": "IDM可在自有Fab生产自家器件；实际产品仍可能采用外部IP、EDA和外包制造。看Samsung、Micron、Intel时，应分别检查产品、工艺和业务边界。",
          "kind": "analysis",
          "sourceIds": [
            "c-fab",
            "c-oip"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "model-pdk",
      "parentId": "models",
      "label": "PDK、IP 与 EDA",
      "subtitle": "设计进入特定工艺的接口",
      "summary": "把电路意图变成符合制造约束的版图与签核数据。",
      "kind": "concept",
      "claims": [
        {
          "text": "工艺设计套件PDK提供设计所需的规则和模型接口；IP提供可集成的电路模块，EDA执行设计、仿真和物理实现。制造生态中三者分工不同。",
          "kind": "fact",
          "sourceIds": [
            "c-oip",
            "c-eda"
          ]
        }
      ],
      "materials": [],
      "techniques": [
        {
          "title": "第三方设计服务",
          "body": "TSMC的Design Center/Value Chain等联盟说明，芯片品牌、设计实现服务商和最终Fab之间可以有其他参与者；合作不自动等于拥有工厂。",
          "sourceIds": [
            "c-oip"
          ]
        }
      ],
      "barriers": [],
      "companyIds": [
        "synopsys",
        "cadence",
        "tsmc"
      ]
    },
    {
      "id": "model-tapeout",
      "parentId": "models",
      "label": "流片、回片与量产",
      "subtitle": "Tape-out 不是工厂名称",
      "summary": "完成设计签核、交付制造数据，与拿到合格芯片是不同阶段。",
      "kind": "concept",
      "claims": [
        {
          "text": "流片通常指完成设计并交付制造所需版图数据；之后还要经历掩模、晶圆加工、测试与验证。回片是获得制造后的样片，不等于量产认证完成。",
          "kind": "analysis",
          "sourceIds": [
            "c-eda",
            "c-mask",
            "c-amkor"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "model-yield",
      "parentId": "models",
      "label": "良率：先明确分母",
      "subtitle": "工厂、节点、产品、阶段分别核对",
      "summary": "缺陷检测、可用裸片和最终合格产品不是同一个数。",
      "kind": "concept",
      "claims": [
        {
          "text": "晶圆过程监控、裸片测试和封装成品测试对应不同阶段；比较良率前要写清产品、测试条件、期间和分母。公司级“改善”不能替代某厂某型号的百分比。",
          "kind": "analysis",
          "sourceIds": [
            "c-kla",
            "c-amkor"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [
        {
          "title": "缺失值不是0%",
          "body": "本页未取得具体厂/型号/期间的可比数字时明确保留未知；厂级良率与芯片设计、冗余、测试筛选和封装阶段有关，不能按制程名称统一填写。",
          "sourceIds": [
            "c-kla",
            "c-amkor"
          ]
        }
      ],
      "companyIds": []
    },
    {
      "id": "wafer-fab",
      "parentId": "manufacturing",
      "label": "在晶圆上制造器件与电路",
      "subtitle": "从空白基底到带图形的晶圆",
      "summary": "同一片晶圆反复经过成膜、图形转移、材料处理和检测。",
      "kind": "domain",
      "claims": [
        {
          "text": "制造不是一次光刻：薄膜、光刻、刻蚀和材料修改会重复组合，形成器件与金属互连；材料、结构和步骤随产品平台不同。",
          "kind": "fact",
          "sourceIds": [
            "c-chipmaking",
            "c-process"
          ]
        }
      ],
      "materials": [
        "半导体基底",
        "导体",
        "绝缘介质",
        "光刻胶与工艺化学品"
      ],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "fab-deposition",
      "parentId": "wafer-fab",
      "label": "沉积：增加功能薄膜",
      "subtitle": "PVD / CVD / ALD",
      "summary": "按器件需要增加导电、绝缘或半导体材料层。",
      "kind": "process",
      "claims": [
        {
          "text": "PVD通过靶材物理输运沉积，CVD依靠前驱体反应，ALD以交替表面反应控制薄层。不同方法对覆盖、温度与材料有不同适配。",
          "kind": "fact",
          "sourceIds": [
            "c-create"
          ]
        }
      ],
      "materials": [
        "SiN等介质",
        "铜/钨等导体",
        "按工艺选择的前驱体"
      ],
      "techniques": [
        {
          "title": "可控的薄膜",
          "body": "材料、温度、压力、等离子体和气体流量共同影响成膜；设备目录能力不能当成任一客户的生产配方。",
          "sourceIds": [
            "c-create"
          ]
        }
      ],
      "barriers": [],
      "companyIds": [
        "applied",
        "lam"
      ]
    },
    {
      "id": "fab-lithography",
      "parentId": "wafer-fab",
      "label": "光刻：定义图形",
      "subtitle": "光刻胶、掩模、曝光与显影",
      "summary": "把版图对应的图形转移到感光层，为后续加工定义区域。",
      "kind": "process",
      "claims": [
        {
          "text": "曝光使光刻胶发生变化，显影后形成图形；真正移除下方材料通常由刻蚀完成。光刻机、掩模与光刻胶共同构成图形化接口。",
          "kind": "fact",
          "sourceIds": [
            "c-litho",
            "c-chipmaking"
          ]
        }
      ],
      "materials": [
        "光刻胶",
        "掩模/reticle",
        "基底上的待加工薄膜"
      ],
      "techniques": [],
      "barriers": [
        {
          "title": "对准和图形保真",
          "body": "同一芯片多层图形必须对齐；光学、机械控制与计算补偿共同决定图形是否能被稳定制造。",
          "sourceIds": [
            "c-litho"
          ]
        }
      ],
      "companyIds": [
        "asml"
      ]
    },
    {
      "id": "fab-etch",
      "parentId": "wafer-fab",
      "label": "刻蚀：选择性移除材料",
      "subtitle": "湿法 / 等离子体 / 选择性刻蚀",
      "summary": "保留需要的形状，并尽量避免损伤邻近结构。",
      "kind": "process",
      "claims": [
        {
          "text": "刻蚀要兼顾材料选择性、形状和损伤；导体与介质、平面与高深宽比结构使用的条件不同。先进逻辑与3D NAND不能直接套用同一刻蚀能力指标。",
          "kind": "fact",
          "sourceIds": [
            "c-shape"
          ]
        }
      ],
      "materials": [
        "反应气体/液体",
        "导体或介质薄膜"
      ],
      "techniques": [],
      "barriers": [
        {
          "title": "深宽比与选择性",
          "body": "目标层与邻近材料的去除速率、孔洞轮廓及损伤需要共同控制；单项速度不足以说明合格器件产出。",
          "sourceIds": [
            "c-shape"
          ]
        }
      ],
      "companyIds": [
        "applied",
        "lam"
      ]
    },
    {
      "id": "fab-doping",
      "parentId": "wafer-fab",
      "label": "掺杂、退火与材料修改",
      "subtitle": "形成需要的电性与结构",
      "summary": "在特定区域引入元素，并用热处理等步骤调节材料。",
      "kind": "process",
      "claims": [
        {
          "text": "离子注入可精确引入掺杂元素；退火能修复部分注入损伤并调节材料。具体元素、剂量和温度取决于器件设计，不是整片统一变成同一种电性。",
          "kind": "fact",
          "sourceIds": [
            "c-modify"
          ]
        }
      ],
      "materials": [
        "硼/砷等按器件选择的掺杂元素",
        "半导体基底"
      ],
      "techniques": [],
      "barriers": [
        {
          "title": "电性与热预算",
          "body": "掺杂轮廓、晶格损伤及后续热处理会相互影响；需要满足器件性能与其他已形成结构的约束。",
          "sourceIds": [
            "c-modify"
          ]
        }
      ],
      "companyIds": [
        "applied"
      ]
    },
    {
      "id": "fab-interconnect",
      "parentId": "wafer-fab",
      "label": "互连与介质层",
      "subtitle": "器件之间的导线与隔离",
      "summary": "晶体管需要金属网络连接，也需要介质把不该相连的导体隔开。",
      "kind": "process",
      "claims": [
        {
          "text": "金属化形成器件间电连接，导电层之外还需要阻挡层和绝缘材料。沉积、刻蚀和抛光组合构成多层互连；不能把“绝缘”理解为另放一片独立隔离芯片。",
          "kind": "fact",
          "sourceIds": [
            "c-process",
            "c-create"
          ]
        }
      ],
      "materials": [
        "铜/钨等金属",
        "氧化物/氮化物等介质",
        "按平台选择的阻挡层"
      ],
      "techniques": [],
      "barriers": [],
      "companyIds": [
        "applied",
        "lam",
        "entegris"
      ]
    },
    {
      "id": "fab-cmp",
      "parentId": "wafer-fab",
      "label": "CMP 与清洗",
      "subtitle": "恢复可继续加工的表面",
      "summary": "化学与机械作用移除目标材料；清洗减少残留与污染。",
      "kind": "process",
      "claims": [
        {
          "text": "器件厂CMP对已有金属或介质层进行平坦化；硅片厂也会抛光空白片，但对象与目标不同。耗材和清洗需与目标材料及后续工序适配。",
          "kind": "fact",
          "sourceIds": [
            "c-shape",
            "c-materials"
          ]
        }
      ],
      "materials": [
        "抛光液",
        "抛光垫",
        "清洗化学品"
      ],
      "techniques": [],
      "barriers": [
        {
          "title": "平整而不破坏",
          "body": "去除均匀性、表面缺陷和残留共同影响后续加工；不能用表面看起来光亮代替合格评价。",
          "sourceIds": [
            "c-shape",
            "c-materials"
          ]
        }
      ],
      "companyIds": [
        "applied",
        "entegris"
      ]
    },
    {
      "id": "fab-control",
      "parentId": "wafer-fab",
      "label": "检测、量测与过程控制",
      "subtitle": "在继续加工前发现偏差",
      "summary": "以尺寸/薄膜量测和缺陷检测支持工艺反馈。",
      "kind": "process",
      "claims": [
        {
          "text": "KLA将缺陷检测、量测、化学过程控制等分为不同产品环节。过程监控能帮助发现问题，却不等于已经测得某颗芯片的最终合格率。",
          "kind": "fact",
          "sourceIds": [
            "c-kla"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [
        {
          "title": "检测与电性验证互补",
          "body": "工艺量测反映结构与过程，后续晶圆/封装测试判断功能与性能；两种结果不能互相替代。",
          "sourceIds": [
            "c-kla",
            "c-amkor"
          ]
        }
      ],
      "companyIds": []
    },
    {
      "id": "packaging",
      "parentId": "manufacturing",
      "label": "封装、组装与测试",
      "subtitle": "把合格裸片变成系统可用产品",
      "summary": "电路制造之后仍有连接、供电、散热、保护与验证任务。",
      "kind": "domain",
      "claims": [
        {
          "text": "OSAT提供外包封装测试；Foundry与IDM也可能提供先进封装。芯片的晶圆制造方与封装方不必相同，具体委托要分别核对。",
          "kind": "analysis",
          "sourceIds": [
            "c-amkor-package",
            "c-3dfabric"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": []
    },
    {
      "id": "package-die-test",
      "parentId": "packaging",
      "label": "晶圆测试与已知良好裸片",
      "subtitle": "Wafer probe / die sort",
      "summary": "在投入后续组装前识别裸片的功能与性能。",
      "kind": "process",
      "claims": [
        {
          "text": "晶圆探针、成品测试、老化与系统级测试属于不同插入点；先进多裸片封装要管理不同芯片带入的风险，不能把测试通过率当作结构缺陷率。",
          "kind": "analysis",
          "sourceIds": [
            "c-amkor"
          ]
        }
      ],
      "materials": [],
      "techniques": [
        {
          "title": "测试策略",
          "body": "Amkor公开列出wafer probe、package test、burn-in和system-level test服务；具体测试覆盖和筛选条件由产品决定。",
          "sourceIds": [
            "c-amkor"
          ]
        }
      ],
      "barriers": [],
      "companyIds": [
        "amkor"
      ]
    },
    {
      "id": "package-chiplets",
      "parentId": "packaging",
      "label": "芯粒、2.5D 与 3D 集成",
      "subtitle": "不同芯片与工艺在封装中组合",
      "summary": "把逻辑、内存或其他功能芯片通过封装互连组织起来。",
      "kind": "process",
      "claims": [
        {
          "text": "TSMC 3DFabric包含SoIC、CoWoS、InFO等不同集成技术。使用先进封装不证明全部裸片来自同一制造方，也不能把HBM封装层数等同于NAND单片层数。",
          "kind": "analysis",
          "sourceIds": [
            "c-3dfabric"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [
        {
          "title": "互连与可测试性",
          "body": "集成后的连接、电性与工作条件仍需验证；单颗合格裸片不自动保证整个组合合格。",
          "sourceIds": [
            "c-3dfabric",
            "c-amkor"
          ]
        }
      ],
      "companyIds": [
        "tsmc",
        "amkor"
      ]
    },
    {
      "id": "package-final-test",
      "parentId": "packaging",
      "label": "成品、老化与系统级测试",
      "subtitle": "从封装产品到可交付芯片",
      "summary": "检查组装后的功能、性能和可靠性。",
      "kind": "process",
      "claims": [
        {
          "text": "测试服务涵盖不同温度、功率和接口条件，仪器、探针/载板与测试程序共同构成验证能力；测试服务商与测试设备商是不同角色。",
          "kind": "fact",
          "sourceIds": [
            "c-amkor"
          ]
        }
      ],
      "materials": [
        "封装后的器件",
        "测试载板/连接接口"
      ],
      "techniques": [],
      "barriers": [],
      "companyIds": [
        "amkor"
      ]
    },
    {
      "id": "support",
      "parentId": "models",
      "label": "其他第三方如何参与",
      "subtitle": "设备、材料、IP、EDA与设计服务",
      "summary": "芯片品牌与Fab之间，以及Fab内部，存在多个专业接口。",
      "kind": "process",
      "claims": [
        {
          "text": "IP和EDA进入设计实现，掩模进入图形转移，设备与化学材料执行制造，OSAT承担封装测试。合作或联盟证据只能支持所披露环节，不能自动画成指定产品供应关系。",
          "kind": "analysis",
          "sourceIds": [
            "c-oip",
            "c-mask",
            "c-materials",
            "c-amkor"
          ]
        }
      ],
      "materials": [],
      "techniques": [],
      "barriers": [],
      "companyIds": [
        "asml",
        "applied",
        "lam",
        "synopsys",
        "cadence",
        "entegris"
      ]
    },
    {
      "id": "substrates",
      "parentId": "manufacturing",
      "label": "空白硅片与衬底",
      "subtitle": "先造出可用于电路制造的起始材料",
      "kind": "domain",
      "summary": "从原料提纯、长晶到表面加工，再按应用选择工程衬底。",
      "claims": [
        {
          "text": "硅衬底是制造器件的起点；晶圆厂随后在其上制造集成电路。抛光片、外延片与SOI具有不同结构。",
          "kind": "fact",
          "sourceIds": [
            "w-01"
          ]
        }
      ],
      "materials": [
        "Si",
        "SiO₂"
      ],
      "techniques": [
        {
          "title": "先分材料与器件",
          "body": "一张镜面硅片不等于已经形成晶体管和金属互连。",
          "sourceIds": [
            "w-29"
          ]
        }
      ],
      "barriers": [
        {
          "title": "规格取决于用途",
          "body": "材料纯度、晶体缺陷与表面状态需要共同满足器件工艺。",
          "sourceIds": [
            "w-01"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "globalwafers",
        "siltronic",
        "sk-siltron"
      ]
    },
    {
      "id": "wafer-feedstock",
      "parentId": "substrates",
      "label": "原料与提纯",
      "subtitle": "SiO₂ → 冶金Si → 电子级多晶Si",
      "kind": "process",
      "summary": "先改变化学成分，再降低杂质。",
      "claims": [
        {
          "text": "从硅石还原取得硅金属，再制成高纯多晶硅；这与后续把多晶料长成单晶不同。",
          "kind": "fact",
          "sourceIds": [
            "w-01"
          ]
        }
      ],
      "materials": [
        "SiO₂",
        "C",
        "Si",
        "HCl",
        "H₂"
      ],
      "techniques": [
        {
          "title": "两种任务",
          "body": "还原去氧；化学提纯降低不需要的杂质。",
          "sourceIds": [
            "w-19",
            "w-02"
          ]
        }
      ],
      "barriers": [
        {
          "title": "原料等级",
          "body": "电子级与光伏级应核对各自规格，不能由总吨数直接互换。",
          "sourceIds": [
            "w-02"
          ]
        }
      ],
      "companyIds": [
        "wacker",
        "hemlock",
        "tokuyama"
      ]
    },
    {
      "id": "wafer-quartz",
      "parentId": "wafer-feedstock",
      "label": "石英／硅石",
      "subtitle": "天然原料不是可直接做芯片的硅",
      "kind": "material",
      "summary": "先识别二氧化硅与元素硅。",
      "claims": [
        {
          "text": "硅石主要含SiO₂；硅与氧化学结合，需先还原，不能把石英砂直接熔成电子级单晶硅。",
          "kind": "fact",
          "sourceIds": [
            "w-19"
          ]
        }
      ],
      "materials": [
        "SiO₂"
      ],
      "techniques": [
        {
          "title": "选料",
          "body": "使用高纯硅石作硅片原料。",
          "sourceIds": [
            "w-01"
          ]
        }
      ],
      "barriers": [
        {
          "title": "尚非电子级",
          "body": "还原之后仍需进一步化学提纯。",
          "sourceIds": [
            "w-19"
          ]
        }
      ],
      "companyIds": []
    },
    {
      "id": "wafer-metallurgical",
      "parentId": "wafer-feedstock",
      "label": "冶金硅",
      "subtitle": "碳还原得到硅金属",
      "kind": "material",
      "summary": "去掉氧之后，仍需去除其他杂质。",
      "claims": [
        {
          "text": "电炉内让硅石与碳反应去氧。官方工艺示例所得约98%纯硅，仍不能直接满足晶圆原料要求。",
          "kind": "fact",
          "sourceIds": [
            "w-19"
          ]
        }
      ],
      "materials": [
        "SiO₂",
        "C",
        "Si"
      ],
      "techniques": [
        {
          "title": "进入化学提纯",
          "body": "硅金属与HCl形成TCS，随后蒸馏分离杂质。",
          "sourceIds": [
            "w-02"
          ]
        }
      ],
      "barriers": [
        {
          "title": "杂质种类不同",
          "body": "金属以及硼、磷等杂质需被进一步控制。",
          "sourceIds": [
            "w-02"
          ]
        }
      ],
      "companyIds": [
        "wacker"
      ]
    },
    {
      "id": "wafer-polysilicon",
      "parentId": "wafer-feedstock",
      "label": "电子级多晶硅",
      "subtitle": "化学提纯与重新沉积",
      "kind": "material",
      "summary": "作为后续单晶生长的原料。",
      "claims": [
        {
          "text": "Siemens法把提纯TCS送入反应器，在硅细棒上沉积多晶硅；半导体用途还有额外清洗要求。",
          "kind": "fact",
          "sourceIds": [
            "w-02"
          ]
        }
      ],
      "materials": [
        "Si",
        "TCS（三氯氢硅）",
        "H₂"
      ],
      "techniques": [
        {
          "title": "颗粒法是另一种制备方式",
          "body": "REC历史FBR实例以热硅烷流化种粒、沉积增大后出料；该例为光伏级，不能自动视为电子级。",
          "sourceIds": [
            "w-35"
          ]
        }
      ],
      "barriers": [
        {
          "title": "逐元素控制",
          "body": "关键杂质与分析方法要逐项核对，不能只比较一个纯度“N数”。",
          "sourceIds": [
            "w-34"
          ]
        }
      ],
      "companyIds": [
        "wacker",
        "hemlock",
        "tokuyama"
      ]
    },
    {
      "id": "wafer-crystal",
      "parentId": "substrates",
      "label": "单晶生长",
      "subtitle": "选择晶体与电学特性",
      "kind": "route",
      "summary": "多晶原料经受控凝固形成统一晶向。",
      "claims": [
        {
          "text": "CZ和FZ都可制备单晶硅；具体生长路线及掺杂由应用要求决定，不是先CZ再FZ。",
          "kind": "fact",
          "sourceIds": [
            "w-04",
            "w-07"
          ]
        }
      ],
      "materials": [
        "电子级多晶Si",
        "籽晶",
        "掺杂剂"
      ],
      "techniques": [
        {
          "title": "有意掺杂",
          "body": "在高纯基体上按规格加入掺杂剂，设定导电类型与电阻率。",
          "sourceIds": [
            "w-03"
          ]
        }
      ],
      "barriers": [
        {
          "title": "均匀性",
          "body": "晶体电阻率及其空间分布需要控制。",
          "sourceIds": [
            "w-07"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "siltronic",
        "pva-tepla",
        "ferrotec"
      ]
    },
    {
      "id": "wafer-cz",
      "parentId": "wafer-crystal",
      "label": "CZ 直拉法",
      "subtitle": "从坩埚熔液中提拉籽晶",
      "kind": "route",
      "summary": "面向半导体硅晶体的一种工业路线。",
      "claims": [
        {
          "text": "高纯多晶硅在石英坩埚内熔化；籽晶接触熔液后旋转并缓慢上提，使晶体按籽晶取向凝固生长。",
          "kind": "fact",
          "sourceIds": [
            "w-12"
          ]
        }
      ],
      "materials": [
        "多晶Si",
        "石英坩埚",
        "籽晶",
        "氩气"
      ],
      "techniques": [
        {
          "title": "控径与热场",
          "body": "协调提拉速度、旋转与温度梯度以维持目标直径。",
          "sourceIds": [
            "w-12"
          ]
        }
      ],
      "barriers": [
        {
          "title": "稳定生长",
          "body": "熔体对流、气流与冷却梯度都需持续监控。",
          "sourceIds": [
            "w-12"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "siltronic",
        "pva-tepla",
        "ferrotec"
      ]
    },
    {
      "id": "wafer-mcz",
      "parentId": "wafer-cz",
      "label": "MCZ 磁场直拉",
      "subtitle": "在CZ基础上增加磁场控制",
      "kind": "route",
      "summary": "属于CZ分支，不是另一种衬底元素。",
      "claims": [
        {
          "text": "MCZ在CZ长晶中施加磁场；相关研究关注磁场如何改变熔液流动与氧输运。",
          "kind": "analysis",
          "sourceIds": [
            "w-03",
            "w-20"
          ]
        }
      ],
      "materials": [
        "Si熔液",
        "籽晶"
      ],
      "techniques": [
        {
          "title": "磁场与熔体",
          "body": "在原有热场和旋转条件外加入磁场这一控制量。",
          "sourceIds": [
            "w-03",
            "w-20"
          ]
        }
      ],
      "barriers": [
        {
          "title": "需按条件评价",
          "body": "磁场下的氧控制依赖耦合流动条件，不能仅凭磁场强度推定产品合格率。",
          "sourceIds": [
            "w-20"
          ]
        }
      ],
      "companyIds": [
        "sumco"
      ]
    },
    {
      "id": "wafer-fz",
      "parentId": "wafer-crystal",
      "label": "FZ 区熔法",
      "subtitle": "小熔区移动，无石英坩埚",
      "kind": "route",
      "summary": "常用于低氧、高电阻率硅。",
      "claims": [
        {
          "text": "高频感应线圈局部熔化多晶硅棒，以下方籽晶形成单晶；上方供料维持熔区。",
          "kind": "fact",
          "sourceIds": [
            "w-13"
          ]
        }
      ],
      "materials": [
        "高纯多晶Si棒",
        "籽晶",
        "掺杂气体"
      ],
      "techniques": [
        {
          "title": "低氧机制",
          "body": "熔液不接触石英坩埚，减少来自坩埚的氧污染。",
          "sourceIds": [
            "w-13"
          ]
        }
      ],
      "barriers": [
        {
          "title": "电学均匀性",
          "body": "高电阻率不够，还要控制径向电阻率分布。",
          "sourceIds": [
            "w-07"
          ]
        }
      ],
      "companyIds": [
        "siltronic",
        "pva-tepla",
        "zhonghuan-leading"
      ]
    },
    {
      "id": "wafer-forming",
      "parentId": "substrates",
      "label": "晶圆几何与表面加工",
      "subtitle": "圆柱晶锭变成合格圆片",
      "kind": "process",
      "summary": "切片、倒角、研磨、腐蚀、抛光与清洗共同形成规格。",
      "claims": [
        {
          "text": "切下的圆片仍有粗糙度和厚度差；需通过边缘及表面加工才能成为镜面抛光片。",
          "kind": "fact",
          "sourceIds": [
            "w-19"
          ]
        }
      ],
      "materials": [
        "单晶Si锭",
        "磨料",
        "化学品",
        "超纯水"
      ],
      "techniques": [
        {
          "title": "按产品配置",
          "body": "加工步骤存在不同实现，研磨也可采用磨削替代。",
          "sourceIds": [
            "w-04"
          ]
        }
      ],
      "barriers": [
        {
          "title": "机械与化学协同",
          "body": "成形必须兼顾平行度和加工损伤的去除。",
          "sourceIds": [
            "w-04"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "siltronic",
        "sk-siltron",
        "shanghai-xinsheng",
        "zhonghuan-leading"
      ]
    },
    {
      "id": "wafer-ingot",
      "parentId": "wafer-forming",
      "label": "晶锭截断、定向与圆磨",
      "subtitle": "先整理晶体，再切成圆片",
      "kind": "process",
      "summary": "确定可用晶段、直径及晶向标记。",
      "claims": [
        {
          "text": "晶锭按规格分段、测定晶向并圆磨；notch或flat可用作后续晶向定位标记。",
          "kind": "fact",
          "sourceIds": [
            "w-04",
            "w-08"
          ]
        }
      ],
      "materials": [
        "单晶Si锭"
      ],
      "techniques": [
        {
          "title": "分段与定向",
          "body": "对晶段检查，再加工目标外径与取向标记。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "barriers": [
        {
          "title": "晶体有可用范围",
          "body": "电阻率、氧碳和晶体结构不合格的晶段不能只靠镜面加工修复。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "siltronic"
      ]
    },
    {
      "id": "wafer-slice",
      "parentId": "wafer-forming",
      "label": "切片",
      "subtitle": "从晶锭切出圆盘",
      "kind": "process",
      "summary": "这是材料切片，不是芯片电路完成后的切粒。",
      "claims": [
        {
          "text": "内圆锯或线锯把单晶锭切成晶圆；切片需要保留后续加工余量。",
          "kind": "fact",
          "sourceIds": [
            "w-04"
          ]
        }
      ],
      "materials": [
        "单晶Si锭",
        "切削介质",
        "线锯"
      ],
      "techniques": [
        {
          "title": "多线切割",
          "body": "线网的间距与切割参数决定圆片厚度及双面平行度。",
          "sourceIds": [
            "w-04"
          ]
        }
      ],
      "barriers": [
        {
          "title": "切后仍待加工",
          "body": "切削产生的表面粗糙和损伤，需在后续步骤处理。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "siltronic"
      ]
    },
    {
      "id": "wafer-edge",
      "parentId": "wafer-forming",
      "label": "倒角与边缘加工",
      "subtitle": "减少尖边与崩边风险",
      "kind": "process",
      "summary": "处理圆片外周轮廓。",
      "claims": [
        {
          "text": "切片后用磨具修整边缘，减少尖锐边缘导致的崩边和裂纹风险。",
          "kind": "fact",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "materials": [
        "Si圆片",
        "磨具"
      ],
      "techniques": [
        {
          "title": "边缘形状",
          "body": "边缘轮廓按客户规格加工。",
          "sourceIds": [
            "w-04"
          ]
        }
      ],
      "barriers": [
        {
          "title": "脆性材料",
          "body": "表面合格不代表边缘无损伤；倒角需独立控制。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "siltronic"
      ]
    },
    {
      "id": "wafer-lap",
      "parentId": "wafer-forming",
      "label": "研磨／磨削",
      "subtitle": "先改善厚度与平行度",
      "kind": "process",
      "summary": "粗加工与最后的镜面抛光不同。",
      "claims": [
        {
          "text": "双面研磨让晶圆两面更平行，并去除一部分切片损伤；某些流程改用磨削。",
          "kind": "fact",
          "sourceIds": [
            "w-04"
          ]
        }
      ],
      "materials": [
        "Si圆片",
        "氧化铝等磨料"
      ],
      "techniques": [
        {
          "title": "双面加工",
          "body": "晶圆夹在上下研磨盘间加工。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "barriers": [
        {
          "title": "余量匹配",
          "body": "粗加工之后仍须去除残留损伤，不能把此时的平整当作最终表面质量。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "companyIds": [
        "sumco",
        "siltronic",
        "shin-etsu"
      ]
    },
    {
      "id": "wafer-etch",
      "parentId": "wafer-forming",
      "label": "化学腐蚀去损伤",
      "subtitle": "去除机械加工残留层",
      "kind": "process",
      "summary": "这里主要处理整片表面，不是电路图形刻蚀。",
      "claims": [
        {
          "text": "机械加工后以酸性、碱性或组合化学工艺去除残余损伤层。",
          "kind": "fact",
          "sourceIds": [
            "w-04"
          ]
        }
      ],
      "materials": [
        "Si圆片",
        "酸／碱药液"
      ],
      "techniques": [
        {
          "title": "去除受损材料",
          "body": "通过化学反应去除切片及研磨造成的应力和结构损伤。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "barriers": [
        {
          "title": "不能只看外观",
          "body": "损伤去除之后，还需要后续表面整理与清洗。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "companyIds": [
        "sumco",
        "siltronic",
        "shin-etsu"
      ]
    },
    {
      "id": "wafer-polish",
      "parentId": "wafer-forming",
      "label": "CMP 镜面抛光",
      "subtitle": "化学与机械共同作用",
      "kind": "process",
      "summary": "形成适合后续电路工艺的表面。",
      "claims": [
        {
          "text": "化学机械抛光改善硅片平坦度和表面质量；这一步与器件厂在多层电路间进行CMP的对象不同。",
          "kind": "fact",
          "sourceIds": [
            "w-05",
            "w-36"
          ]
        }
      ],
      "materials": [
        "Si圆片",
        "抛光垫",
        "抛光液"
      ],
      "techniques": [
        {
          "title": "胶体硅抛光",
          "body": "典型硅片流程使用胶体二氧化硅进行机械化学抛光。",
          "sourceIds": [
            "w-03"
          ]
        }
      ],
      "barriers": [
        {
          "title": "多尺度表面要求",
          "body": "平坦度、局部起伏与粗糙度应按不同空间尺度评价，不能以镜面外观替代量测。",
          "sourceIds": [
            "w-36"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "globalwafers",
        "siltronic",
        "sk-siltron"
      ]
    },
    {
      "id": "wafer-clean",
      "parentId": "wafer-forming",
      "label": "清洗、干燥与包装",
      "subtitle": "控制最后的污染引入",
      "kind": "process",
      "summary": "清洗在流程中多次发生，末端还需密封保护。",
      "claims": [
        {
          "text": "硅片制造采用电子级化学品及高纯水；最终清洗后密封出货，避免表面重新污染。",
          "kind": "fact",
          "sourceIds": [
            "w-19"
          ]
        }
      ],
      "materials": [
        "超纯水",
        "清洗化学品",
        "洁净包装"
      ],
      "techniques": [
        {
          "title": "清洗并非只做一次",
          "body": "切片、研磨和化学加工后有相应清洗，再进行末端检查。",
          "sourceIds": [
            "w-08"
          ]
        }
      ],
      "barriers": [
        {
          "title": "水与药液也会带来污染",
          "body": "不能仅检查硅原料纯度，还要控制加工介质与表面。",
          "sourceIds": [
            "w-19"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "globalwafers",
        "siltronic",
        "sk-siltron"
      ]
    },
    {
      "id": "wafer-polished",
      "parentId": "substrates",
      "label": "抛光硅片",
      "subtitle": "可以交付的起始衬底",
      "kind": "material",
      "summary": "表面完成，不代表已经制成芯片。",
      "claims": [
        {
          "text": "抛光硅片可由CZ或FZ晶体制成，按应用选择掺杂；它可以直接交付，也可进入特殊加工分支。",
          "kind": "fact",
          "sourceIds": [
            "w-05",
            "w-01"
          ]
        }
      ],
      "materials": [
        "单晶Si"
      ],
      "techniques": [
        {
          "title": "交给器件厂",
          "body": "后续才是在衬底上形成有源器件及电路。",
          "sourceIds": [
            "w-19",
            "w-29"
          ]
        }
      ],
      "barriers": [
        {
          "title": "验收有多个维度",
          "body": "化学纯度、表面、晶体及电学指标需要分别检查。",
          "sourceIds": [
            "w-10"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "globalwafers",
        "siltronic",
        "sk-siltron",
        "shanghai-xinsheng",
        "zhonghuan-leading"
      ]
    },
    {
      "id": "wafer-engineered",
      "parentId": "substrates",
      "label": "外延与工程衬底分支",
      "subtitle": "按器件需求选择附加结构",
      "kind": "route",
      "summary": "外延片和SOI不是所有抛光片的共同下一站。",
      "claims": [
        {
          "text": "厂商按客户用途对抛光片追加不同处理；外延片与SOI分别形成不同材料结构。",
          "kind": "fact",
          "sourceIds": [
            "w-03"
          ]
        }
      ],
      "materials": [
        "抛光Si片",
        "SiO₂"
      ],
      "techniques": [
        {
          "title": "分开理解结构",
          "body": "外延增加单晶表层，SOI在器件硅层与支撑片间设置绝缘层。",
          "sourceIds": [
            "w-06",
            "w-09"
          ]
        }
      ],
      "barriers": [
        {
          "title": "结构参数需匹配",
          "body": "层厚、界面与电学性质需要结合用途指定。",
          "sourceIds": [
            "w-06",
            "w-09"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "globalwafers",
        "soitec"
      ]
    },
    {
      "id": "wafer-epitaxy",
      "parentId": "wafer-engineered",
      "label": "硅外延片",
      "subtitle": "在抛光衬底上生长单晶层",
      "kind": "route",
      "summary": "表层与支撑衬底可以有不同电学设计。",
      "claims": [
        {
          "text": "在抛光Si表面沉积额外单晶Si层；外延层性质可与衬底分别设计。",
          "kind": "fact",
          "sourceIds": [
            "w-06"
          ]
        }
      ],
      "materials": [
        "抛光Si片",
        "含硅前驱体"
      ],
      "techniques": [
        {
          "title": "气相生长",
          "body": "前驱体在加热晶片表面形成延续晶向的硅层。",
          "sourceIds": [
            "w-03",
            "w-06"
          ]
        }
      ],
      "barriers": [
        {
          "title": "层的均匀性",
          "body": "需控制外延厚度与电阻率分布，以及表面和晶体缺陷。",
          "sourceIds": [
            "w-06",
            "w-11"
          ]
        }
      ],
      "companyIds": [
        "shin-etsu",
        "sumco",
        "globalwafers",
        "siltronic",
        "sk-siltron",
        "shanghai-xinsheng"
      ]
    },
    {
      "id": "wafer-soi",
      "parentId": "wafer-engineered",
      "label": "SOI 绝缘体上硅",
      "subtitle": "薄硅层／埋氧层／支撑片",
      "kind": "route",
      "summary": "工程衬底的层结构，不是“另一种纯度”的硅。",
      "claims": [
        {
          "text": "SOI在活性硅层与支撑片之间设置绝缘层；可通过氧化、晶圆键合及减薄等方法形成。",
          "kind": "fact",
          "sourceIds": [
            "w-03",
            "w-09"
          ]
        }
      ],
      "materials": [
        "单晶Si",
        "SiO₂",
        "支撑片"
      ],
      "techniques": [
        {
          "title": "结构分工",
          "body": "上层硅用于器件，埋氧层提供隔离，底层提供支撑。",
          "sourceIds": [
            "w-09"
          ]
        }
      ],
      "barriers": [
        {
          "title": "层厚与界面",
          "body": "转移层、绝缘层的均匀性和键合界面要满足对应应用。",
          "sourceIds": [
            "w-09"
          ]
        }
      ],
      "companyIds": [
        "soitec",
        "shin-etsu",
        "sumco",
        "globalwafers"
      ]
    },
    {
      "id": "wafer-soi-transfer",
      "parentId": "wafer-soi",
      "label": "Smart Cut 层转移实例",
      "subtitle": "注入、键合、分离与表面修复",
      "kind": "process",
      "summary": "SOI的一种工业制备路线。",
      "claims": [
        {
          "text": "Smart Cut结合轻离子注入和分子键合，把薄单晶层转移到另一支撑片。",
          "kind": "fact",
          "sourceIds": [
            "w-09"
          ]
        }
      ],
      "materials": [
        "供体Si片",
        "支撑Si片",
        "轻离子"
      ],
      "techniques": [
        {
          "title": "控制转移深度",
          "body": "注入能量影响转移层厚度；转移后的供体经表面修复可再次使用。",
          "sourceIds": [
            "w-09"
          ]
        }
      ],
      "barriers": [
        {
          "title": "非无限复用",
          "body": "需检查转移层及键合界面；供体再用还包含表面修复步骤。",
          "sourceIds": [
            "w-09"
          ]
        }
      ],
      "companyIds": [
        "soitec"
      ]
    },
    {
      "id": "wafer-other-materials",
      "parentId": "substrates",
      "label": "InP、GaAs、SiC分别看",
      "subtitle": "不能套用同一套硅长晶配方",
      "kind": "material",
      "summary": "圆形晶圆形态相似，成分、缺陷与用途却不同。",
      "claims": [
        {
          "text": "InP/GaAs是III-V化合物；SiC是碳化硅。它们与元素Si不同，衬底仍不是完成的激光器或功率芯片。",
          "kind": "fact",
          "sourceIds": [
            "w-17",
            "w-18"
          ]
        }
      ],
      "materials": [
        "InP",
        "GaAs",
        "SiC"
      ],
      "techniques": [
        {
          "title": "对应不同长晶路线",
          "body": "AXT列示InP/GaAs的VGF；SK资料列示SiC的PVT，不能全部画为硅CZ流程。",
          "sourceIds": [
            "w-17",
            "w-18",
            "w-21"
          ]
        }
      ],
      "barriers": [
        {
          "title": "验收对象不同",
          "body": "SiC外延需控制层厚、掺杂和缺陷，不能借用硅片合格率。",
          "sourceIds": [
            "w-18"
          ]
        }
      ],
      "companyIds": [
        "axt",
        "sk-siltron",
        "pva-tepla"
      ]
    },
    {
      "id": "wafer-qualification",
      "parentId": "substrates",
      "label": "量测、分级与客户验收",
      "subtitle": "把“亮镜面”变成可核规格",
      "kind": "process",
      "summary": "材料和表面的不同问题需不同测量。",
      "claims": [
        {
          "text": "厂商分别测量氧碳、表面状态与电阻率；空白／未图形化晶圆缺陷检测还用于出厂及来料质量控制。",
          "kind": "analysis",
          "sourceIds": [
            "w-10",
            "w-11"
          ]
        }
      ],
      "materials": [
        "硅片",
        "检测标准样品"
      ],
      "techniques": [
        {
          "title": "按缺陷与用途分类",
          "body": "检测、计数和归类缺陷，以监控过程偏移；不能由一项检测数直接推导最终芯片良率。",
          "sourceIds": [
            "w-11"
          ]
        }
      ],
      "barriers": [
        {
          "title": "数值需要分母",
          "body": "谈良率需指明基地、产品、期间及合格判据；认证或产能不构成同一分母。",
          "sourceIds": [
            "w-10",
            "w-11"
          ]
        }
      ],
      "companyIds": [
        "globalwafers",
        "kla",
        "shin-etsu",
        "sumco",
        "siltronic",
        "sk-siltron"
      ]
    },
    {
      "id": "logic",
      "parentId": "manufacturing",
      "label": "逻辑芯片与晶圆厂",
      "subtitle": "按具体产品、芯粒、工艺和厂区逐层核对",
      "kind": "domain",
      "summary": "CPU、GPU与专用AI加速器都是逻辑产品；设计者、晶圆制造者和封装整合者可能不同。",
      "claims": [
        {
          "text": "台积电按客户提供的电路设计制造硅晶圆；Intel则同时拥有内部制造与外部代工合作。",
          "kind": "fact",
          "sourceIds": [
            "l-tsmc-20f",
            "l-intel-idm"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "沿制造层级展开",
          "body": "先选择产品，再分辨计算/I/O芯粒、制造工艺和封装；厂区清单只有在存在直接披露时才与具体产品相连。",
          "sourceIds": [
            "l-amd-epyc-arch",
            "l-intel-lunar"
          ]
        }
      ],
      "barriers": [
        {
          "title": "工艺名字不足以确定产地",
          "body": "节点或封装技术的名称不能单独证明某款产品来自哪座厂；产品代工关系与设施能力分别记录。",
          "sourceIds": [
            "l-tsmc-20f",
            "l-nvidia-b200"
          ]
        }
      ],
      "companyIds": [
        "nvidia",
        "amd",
        "intel",
        "google",
        "aws"
      ]
    },
    {
      "id": "logic-design",
      "parentId": "logic",
      "label": "从设计到制造",
      "subtitle": "电路功能、晶圆工艺与封装是不同层次",
      "kind": "concept",
      "summary": "设计定义运算与互连；制造工艺将电路做进晶圆；封装把合格裸片与其他部件接起来。",
      "claims": [
        {
          "text": "Lunar Lake由两个tile经Foveros连接，并把内存放入封装；因此一个处理器封装不等于一块单片裸片。",
          "kind": "fact",
          "sourceIds": [
            "l-intel-lunar"
          ]
        }
      ],
      "materials": [],
      "techniques": [
        {
          "title": "分清die与package",
          "body": "MI300X的计算与I/O分在不同裸片上，再通过垂直堆叠形成产品。读规格时需要保留这个边界。",
          "sourceIds": [
            "l-amd-cdna3"
          ]
        }
      ],
      "barriers": [
        {
          "title": "同名产品也要保留部件粒度",
          "body": "仅一个Lithography字段不足以给CPU中的所有tile分配相同制程。",
          "sourceIds": [
            "l-intel-handbook",
            "l-intel-lunar"
          ]
        }
      ],
      "companyIds": [
        "intel",
        "amd"
      ]
    },
    {
      "id": "logic-fabless",
      "parentId": "logic",
      "label": "设计公司与Foundry",
      "subtitle": "外包制造也要逐产品核对",
      "kind": "route",
      "summary": "芯片品牌通常不是Fab的所有者；同一设计公司也可在不同产品与时期使用不同制造伙伴。",
      "claims": [
        {
          "text": "AMD披露高性能计算晶圆由TSMC制造，同时保留GF等其他产品制造安排；不能把整个AMD目录画成同一节点。",
          "kind": "fact",
          "sourceIds": [
            "l-amd-10k"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "产品级连线",
          "body": "B200的TSMC 4NP关系有NVIDIA直接披露；Google或AWS只披露节点时，不能靠同行产品推填制造商。",
          "sourceIds": [
            "l-nvidia-b200",
            "l-tpu-v4",
            "l-aws-trn3"
          ]
        }
      ],
      "barriers": [
        {
          "title": "封装合作的证据边界",
          "body": "TSMC 2022年公告确认Trainium的CoWoS合作，但这不直接证明Trainium3的晶圆代工厂。",
          "sourceIds": [
            "l-tsmc-aws-cowos"
          ]
        }
      ],
      "companyIds": [
        "nvidia",
        "amd"
      ]
    },
    {
      "id": "logic-idm",
      "parentId": "logic",
      "label": "IDM与混合制造",
      "subtitle": "有自有Fab仍可外包某些芯粒",
      "kind": "route",
      "summary": "IDM描述设计与制造的组织能力；它并不保证每款产品的每块裸片都在自有工厂生产。",
      "claims": [
        {
          "text": "Intel在2021年为Meteor Lake披露的计划是Intel 4计算tile与TSMC制造的部分支持tile组合；这篇计划公告不能独自证明后续全部tile的交付。",
          "kind": "fact",
          "sourceIds": [
            "l-intel-idm"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "内部工艺＋外部tile＋先进封装",
          "body": "Intel的模块化方案允许不同节点的tile经自身封装技术组合。",
          "sourceIds": [
            "l-intel-idm"
          ]
        }
      ],
      "barriers": [
        {
          "title": "研发厂、量产厂和计划厂不同",
          "body": "D1X的High-NA验证、Fab 34高量产和Ohio放缓建设分别属于不同状态，不能合成现役产能。",
          "sourceIds": [
            "l-intel-d1x",
            "l-intel-fab34",
            "l-intel-10k"
          ]
        }
      ],
      "companyIds": [
        "intel"
      ]
    },
    {
      "id": "logic-nvidia-gpu",
      "parentId": "logic-fabless",
      "label": "NVIDIA B200 GPU",
      "subtitle": "TSMC 4NP；双裸片统一为一个GPU",
      "kind": "route",
      "summary": "用B200观察大规模逻辑裸片与封装协同；这里的路线不代表所有NVIDIA GPU。",
      "claims": [
        {
          "text": "NVIDIA在2024年Blackwell发布中披露定制TSMC 4NP，以及两块GPU裸片通过片间链路组成统一GPU。",
          "kind": "fact",
          "sourceIds": [
            "l-nvidia-b200"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "跨裸片互连",
          "body": "拆成两块裸片后仍要提供足够的片间带宽和一致的软件使用方式；这是封装与架构共同承担的任务。",
          "sourceIds": [
            "l-nvidia-b200"
          ]
        }
      ],
      "barriers": [
        {
          "title": "不能由节点反推Fab",
          "body": "已知TSMC 4NP不等于已知具体工厂；所引产品公告没有逐Fab分配。",
          "sourceIds": [
            "l-nvidia-b200"
          ]
        }
      ],
      "companyIds": [
        "nvidia"
      ]
    },
    {
      "id": "logic-amd-cpu",
      "parentId": "logic-fabless",
      "label": "AMD EPYC 9755 / 9965",
      "subtitle": "Zen 5与Zen 5c使用不同CCD节点",
      "kind": "route",
      "summary": "EPYC 9005是混合多裸片CPU；先确认型号采用哪类CCD，再理解计算与I/O的工艺拆分。",
      "claims": [
        {
          "text": "9755为128核Zen 5，9965为192核Zen 5c；架构文档分别给出4nm与3nm CCD，I/O die为6nm。",
          "kind": "fact",
          "sourceIds": [
            "l-amd-epyc-sku",
            "l-amd-epyc-arch"
          ]
        },
        {
          "text": "AMD披露7nm及以下CPU/GPU产品聚焦TSMC工艺；这是制造商证据，具体芯粒节点另由架构文档支持。",
          "kind": "fact",
          "sourceIds": [
            "l-amd-10k"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "计算与I/O分别选工艺",
          "body": "不必把整颗CPU都迁移到最小节点；EPYC把计算核心和I/O分开演进。",
          "sourceIds": [
            "l-amd-epyc-arch"
          ]
        }
      ],
      "barriers": [
        {
          "title": "核心数不是裸片数",
          "body": "SKU的核心数量、CCD类型与每片启用资源不能互相替代；不要仅从192核推算全部封装细节。",
          "sourceIds": [
            "l-amd-epyc-sku",
            "l-amd-epyc-arch"
          ]
        }
      ],
      "companyIds": [
        "amd"
      ]
    },
    {
      "id": "logic-amd-gpu",
      "parentId": "logic-fabless",
      "label": "AMD Instinct MI300X",
      "subtitle": "TSMC 5nm XCD＋6nm I/O die",
      "kind": "route",
      "summary": "计算和数据搬运采用不同裸片，再与HBM通过先进封装组成加速器。",
      "claims": [
        {
          "text": "MI300X采用8个计算XCD与4个IOD；白皮书将XCD和IOD分别对应TSMC 5nm与6nm。",
          "kind": "fact",
          "sourceIds": [
            "l-amd-cdna3",
            "l-amd-mi300x"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "3D异构整合",
          "body": "XCD垂直堆叠在IOD上；HBM、计算和I/O属于同一封装中的不同部件。",
          "sourceIds": [
            "l-amd-cdna3"
          ]
        }
      ],
      "barriers": [
        {
          "title": "多层制造需要分别验证",
          "body": "不能把5nm当作HBM或所有I/O的制程，也不能把完整加速器的良率等同于某一块裸片良率。",
          "sourceIds": [
            "l-amd-cdna3"
          ]
        }
      ],
      "companyIds": [
        "amd"
      ]
    },
    {
      "id": "logic-intel-tiles",
      "parentId": "logic-idm",
      "label": "Intel Core Ultra芯粒路线",
      "subtitle": "155H与288V不能一概标成Intel自制",
      "kind": "route",
      "summary": "Meteor Lake与Lunar Lake展示了Intel不同代CPU的制造组合。",
      "claims": [
        {
          "text": "2026年Intel手册将Core Ultra 7 155H列为Meteor Lake、Intel 4，将Core Ultra 9 288V列为Lunar Lake、TSMC N3B。",
          "kind": "fact",
          "sourceIds": [
            "l-intel-handbook"
          ]
        },
        {
          "text": "Intel在2021年计划中将Meteor Lake计算tile交给Intel 4、部分支持tile交给TSMC；Lunar Lake的后续架构资料说明两个tile和Foveros组合。",
          "kind": "fact",
          "sourceIds": [
            "l-intel-idm",
            "l-intel-lunar"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "型号与架构交叉阅读",
          "body": "手册的Lithography是一行产品字段；其TSMC N3B记录支持288V采用外部先进工艺，不能补写另一tile也为N3B。",
          "sourceIds": [
            "l-intel-handbook",
            "l-intel-lunar"
          ]
        }
      ],
      "barriers": [
        {
          "title": "节点名与厂名分开",
          "body": "Intel 4不是Fab 4；TSMC N3B也不是厂址。没有逐产品工厂披露时，不把手册连向某一座Fab。",
          "sourceIds": [
            "l-intel-handbook",
            "l-intel-fab34"
          ]
        }
      ],
      "companyIds": [
        "intel"
      ]
    },
    {
      "id": "logic-tpu",
      "parentId": "logic-fabless",
      "label": "Google TPU",
      "subtitle": "已知节点；未披露制造方保留未知",
      "kind": "route",
      "summary": "TPU是Google专用AI处理器路线；合作方、制造节点、晶圆工厂要分别确认。",
      "claims": [
        {
          "text": "Google作者的ISCA 2023论文Table 4列TPU v4为7nm、2020年生产部署；所核论文没有点名晶圆代工方。",
          "kind": "fact",
          "sourceIds": [
            "l-tpu-v4"
          ]
        },
        {
          "text": "Broadcom于2026-04-06披露为Google未来TPU代际开发与供应的协议，未在该协议披露foundry或厂区。",
          "kind": "fact",
          "sourceIds": [
            "l-broadcom-google"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "未来代际协议单独建边",
          "body": "Google—Broadcom连线表示已披露的开发/供应合作，不追溯作为TPU v4晶圆制造证据。",
          "sourceIds": [
            "l-broadcom-google"
          ]
        }
      ],
      "barriers": [
        {
          "title": "不以供应商身份代替Fab披露",
          "body": "TPU v4的晶圆制造商、具体厂区和可比较良率在这组直接来源中仍未知。",
          "sourceIds": [
            "l-tpu-v4",
            "l-broadcom-google"
          ]
        }
      ],
      "companyIds": [
        "google",
        "broadcom"
      ]
    },
    {
      "id": "logic-trainium",
      "parentId": "logic-fabless",
      "label": "AWS Trainium",
      "subtitle": "Trainium3节点与历史CoWoS合作分开",
      "kind": "route",
      "summary": "Annapurna Labs为AWS设计芯片；不同代际的晶圆与封装证据不可混用。",
      "claims": [
        {
          "text": "AWS于2025-12-02宣布Trn3 UltraServers GA，并称Trainium3是其首款3nm AI芯片；该公告没有点名晶圆制造方。",
          "kind": "fact",
          "sourceIds": [
            "l-aws-trn3"
          ]
        },
        {
          "text": "TSMC 2022年公告中的AWS引述确认当时Trainium采用双方合作的CoWoS封装并进入生产。",
          "kind": "fact",
          "sourceIds": [
            "l-tsmc-aws-cowos"
          ]
        }
      ],
      "materials": [
        "硅基集成电路"
      ],
      "techniques": [
        {
          "title": "区分节点与封装",
          "body": "3nm描述Trainium3的工艺；CoWoS描述2022公告所述Trainium的封装合作，两条信息不可直接拼成同一代产品的完整制造链。",
          "sourceIds": [
            "l-aws-trn3",
            "l-tsmc-aws-cowos"
          ]
        }
      ],
      "barriers": [
        {
          "title": "GA不等于完整BOM公开",
          "body": "云实例已经GA仍可能没有公开晶圆厂、封装厂区或供应份额；缺口保留为未披露。",
          "sourceIds": [
            "l-aws-trn3"
          ]
        }
      ],
      "companyIds": [
        "aws"
      ]
    },
    {
      "id": "logic-foundry-facilities",
      "parentId": "logic",
      "label": "实际逻辑Fab",
      "subtitle": "12个具名厂区/产线代表；非全球穷举",
      "kind": "concept",
      "summary": "Fab是物理制造设施；foundry是承接客户电路制造的业务关系。设施能力不能自动证明某款CPU或GPU在该厂制造。",
      "claims": [
        {
          "text": "台积电2025年20-F分别列出Fab 15、16、18、21；厂号、地点、晶圆尺寸与量产工艺是独立字段。",
          "kind": "fact",
          "sourceIds": [
            "l-tsmc-20f"
          ]
        },
        {
          "text": "TSMC Arizona第一厂已N4量产；第二厂N3在所引里程碑中仍以2027下半年为目标。",
          "kind": "fact",
          "sourceIds": [
            "l-tsmc-arizona"
          ]
        }
      ],
      "materials": [],
      "techniques": [
        {
          "title": "成熟逻辑工艺仍是逻辑Fab",
          "body": "UMC台南Fab 12A的14/28nm和GF Malta的12LP也是逻辑制造路线，不能因节点数字较大就划成存储厂。",
          "sourceIds": [
            "l-umc-12a",
            "l-gf-12lp"
          ]
        }
      ],
      "barriers": [
        {
          "title": "计划与在营分开",
          "body": "Intel 2025年报说明Ohio建设放缓，德国晶圆厂和波兰封测扩建计划终止；这些计划不计入下方在营代表。",
          "sourceIds": [
            "l-intel-10k"
          ]
        }
      ],
      "companyIds": [
        "umc"
      ]
    },
    {
      "id": "logic-yield",
      "parentId": "logic",
      "label": "良率的公开边界",
      "subtitle": "未披露不写百分比；利用率也不是良率",
      "kind": "concept",
      "summary": "良率需要明确工厂、产品、工艺、时期和测试阶段，才能形成可比较数字。",
      "claims": [
        {
          "text": "AMD说明生产缺陷可能导致裸片测试不通过，小裸片筛选后才组合成处理器；这没有提供任何厂级百分比。",
          "kind": "company-claim",
          "sourceIds": [
            "l-amd-epyc-arch"
          ]
        },
        {
          "text": "以下12个设施的所列来源均未披露可按同一厂、产品、时期比较的良率数值，因此统一标为not-disclosed。",
          "kind": "analysis",
          "sourceIds": [
            "l-tsmc-20f",
            "l-intel-10k",
            "l-samsung-v1",
            "l-umc-12a",
            "l-gf-12lp",
            "l-smic-annual"
          ]
        }
      ],
      "materials": [],
      "techniques": [
        {
          "title": "分开统计层级",
          "body": "晶圆上合格裸片、封装通过率与最终系统测试通过率分属不同阶段；多裸片结构尤其不宜用一个传闻百分比概括。",
          "sourceIds": [
            "l-amd-epyc-arch",
            "l-amd-cdna3"
          ]
        }
      ],
      "barriers": [
        {
          "title": "产能利用率不能代替良率",
          "body": "SMIC年报单列产能利用率；它衡量产能使用，不能作为某款芯片良率。",
          "sourceIds": [
            "l-smic-annual"
          ]
        }
      ],
      "companyIds": []
    },
    {
      "id": "memory",
      "parentId": "manufacturing",
      "label": "存储制造",
      "subtitle": "电路单元、阵列工艺与封装分开看",
      "kind": "domain",
      "summary": "SRAM、DRAM与NAND共享硅基制造基础，但单元、外围电路与系统角色不同。",
      "claims": [
        {
          "text": "SRAM主要用于处理器缓存；DRAM面向工作内存；NAND面向掉电保持的存储。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-ram"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [],
      "barriers": [],
      "companyIds": [
        "samsung",
        "sk-hynix",
        "micron",
        "cxmt",
        "ymtc",
        "kioxia",
        "sandisk",
        "solidigm"
      ]
    },
    {
      "id": "memory-sram",
      "parentId": "memory",
      "label": "SRAM",
      "subtitle": "多晶体管静态存储单元",
      "kind": "process",
      "summary": "缓存不是独立DRAM晶圆工艺的同义词。",
      "claims": [
        {
          "text": "SRAM在供电时不需周期刷新，通常集成于处理器作为高速缓存；也存在独立芯片产品。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-ram",
            "s-ms-gsi"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "存储宏与编译器",
          "body": "存储IP按容量、端口、速度和功耗配置宏，必须适配具体foundry工艺。",
          "sourceIds": [
            "s-ms-memory-ip"
          ]
        }
      ],
      "barriers": [
        {
          "title": "低压与统计变化",
          "body": "同一宏要覆盖工艺、电压和温度角落；测试与冗余修复帮助筛除或修复失效。",
          "sourceIds": [
            "s-ms-memory-ip"
          ]
        }
      ],
      "companyIds": [
        "synopsys",
        "tsmc",
        "samsung",
        "infineon",
        "gsi-technology"
      ]
    },
    {
      "id": "memory-embedded-sram",
      "parentId": "memory-sram",
      "label": "CPU / GPU中的嵌入式SRAM",
      "subtitle": "设计商＋存储IP＋逻辑代工协同",
      "kind": "route",
      "summary": "由芯片设计商确定缓存架构，IP及代工流程共同实现，不另列成“CPU专用DRAM厂”。",
      "claims": [
        {
          "text": "处理器缓存的SRAM通常随逻辑芯片实现；设计团队可使用自研宏或代工工艺匹配的存储IP。此处是角色归纳，未指定某CPU/GPU采用哪家IP。",
          "kind": "analysis",
          "sourceIds": [
            "s-ms-ram",
            "s-ms-memory-ip"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "工艺匹配",
          "body": "Synopsys公开提供面向TSMC、Samsung、Intel及GF等平台的嵌入式存储IP；目录能力不等于具名客户采用。",
          "sourceIds": [
            "s-ms-memory-ip"
          ]
        }
      ],
      "barriers": [
        {
          "title": "面积、时序和功耗共同收敛",
          "body": "高密度与高速宏是不同选项；不能只用逻辑节点名称推断缓存面积、最低工作电压或良率。",
          "sourceIds": [
            "s-ms-memory-ip"
          ]
        }
      ],
      "companyIds": [
        "nvidia",
        "amd",
        "intel",
        "synopsys",
        "tsmc",
        "samsung",
        "globalfoundries"
      ]
    },
    {
      "id": "memory-discrete-sram",
      "parentId": "memory-sram",
      "label": "独立SRAM产品",
      "subtitle": "产品厂商也可以没有自己的晶圆厂",
      "kind": "route",
      "summary": "GSI是设计与销售独立SRAM的实际例子，不宜把“独立SRAM厂”都理解为自有Fab。",
      "claims": [
        {
          "text": "GSI FY2026披露其SRAM晶圆全部由TSMC制造，主要SRAM采用130/90/65/40nm工艺。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-gsi"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "Master die",
          "body": "共用主裸片与后续金属化、封装及测试配置形成不同产品，降低重复掩膜成本。",
          "sourceIds": [
            "s-ms-gsi"
          ]
        }
      ],
      "barriers": [
        {
          "title": "代工容量与认证",
          "body": "GSI按采购订单取得晶圆，供应容量与后段测试配合决定交付，产品公司不等于自有晶圆厂。",
          "sourceIds": [
            "s-ms-gsi"
          ]
        }
      ],
      "companyIds": [
        "gsi-technology",
        "tsmc",
        "infineon"
      ]
    },
    {
      "id": "memory-dram",
      "parentId": "memory",
      "label": "DRAM晶圆制造",
      "subtitle": "1T1C阵列＋外围CMOS",
      "kind": "process",
      "summary": "缩小单元同时维持电容、漏电与刷新要求，和逻辑晶体管微缩的目标不同。",
      "claims": [
        {
          "text": "DRAM典型单元由一个晶体管和一个电容构成，需要周期刷新。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-ram"
          ]
        },
        {
          "text": "长鑫公布G5采用四重曝光并提高电容深宽比；这些是公司平台描述，不是某厂区良率认证。",
          "kind": "company-claim",
          "sourceIds": [
            "s-ms-cxmt-g5"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "高介电常数绝缘材料",
        "金属电极"
      ],
      "techniques": [
        {
          "title": "阵列与电容共同微缩",
          "body": "长鑫G5将阵列有源区半间距与高深宽比电容、HKMG等工艺配合，尺寸指标需要保留其定义。",
          "sourceIds": [
            "s-ms-cxmt-g5"
          ]
        }
      ],
      "barriers": [
        {
          "title": "电荷保持与制造窗口",
          "body": "缩小几何尺寸仍须保证可区分的电荷和刷新条件；材料、界面及电容形貌不能只靠曝光节点概括。",
          "sourceIds": [
            "s-ms-ram",
            "s-ms-cxmt-g5"
          ]
        }
      ],
      "companyIds": [
        "samsung",
        "sk-hynix",
        "micron",
        "cxmt"
      ]
    },
    {
      "id": "memory-ddr",
      "parentId": "memory-dram",
      "label": "DDR系列",
      "subtitle": "外部工作内存接口与产品族",
      "kind": "route",
      "summary": "DDR4/DDR5是DRAM产品代际，不能直接对应单一晶圆线宽。",
      "claims": [
        {
          "text": "Samsung、SK hynix、Micron和长鑫均公开DDR产品或商业化记录；具体代际与量产厂区应分别核对。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-ram",
            "s-ms-sk-stack",
            "s-ms-micron26",
            "s-ms-cxmt"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "接口与阵列分层",
          "body": "DDR5接口和DRAM制造节点分列；接口名称不能替代工艺。",
          "sourceIds": [
            "s-ms-micron26"
          ]
        }
      ],
      "barriers": [
        {
          "title": "不要跨用产品与厂区证据",
          "body": "公司产品与具体基地产品组合须分别举证。",
          "sourceIds": [
            "s-ms-micron26",
            "s-ms-cxmt"
          ]
        }
      ],
      "companyIds": [
        "samsung",
        "sk-hynix",
        "micron",
        "cxmt"
      ]
    },
    {
      "id": "memory-lpddr",
      "parentId": "memory-dram",
      "label": "LPDDR系列",
      "subtitle": "低功耗DRAM，不等于小型NAND",
      "kind": "route",
      "summary": "手机和部分AI服务器均可使用LPDDR，目标是带宽、功耗与封装约束的平衡。",
      "claims": [
        {
          "text": "Samsung、SK hynix、Micron及长鑫公开LPDDR产品；长鑫于2026-09-20宣布G5 24Gb LPDDR5X量产。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-samsung-p2",
            "s-ms-sk-stack",
            "s-ms-micron26",
            "s-ms-cxmt-g5"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "晶圆节点与封装规格分列",
          "body": "LPDDR5X仍须分列DRAM节点、容量和封装。",
          "sourceIds": [
            "s-ms-cxmt-g5",
            "s-ms-micron26"
          ]
        }
      ],
      "barriers": [
        {
          "title": "比较时保留产品条件",
          "body": "应并列容量、速率、功耗与测试条件；只凭LPDDR名称或DRAM线宽，无法比较整套产品。",
          "sourceIds": [
            "s-ms-cxmt-g5",
            "s-ms-micron26"
          ]
        }
      ],
      "companyIds": [
        "samsung",
        "sk-hynix",
        "micron",
        "cxmt"
      ]
    },
    {
      "id": "memory-hbm",
      "parentId": "memory-dram",
      "label": "HBM",
      "subtitle": "DRAM核心裸片＋TSV＋底座＋先进封装",
      "kind": "route",
      "summary": "HBM是堆叠DRAM架构与集成流程，不是替换硅的新晶圆材料。",
      "claims": [
        {
          "text": "HBM利用TSV垂直连接DRAM核心裸片与底座；Samsung、SK hynix和Micron公开供应HBM产品。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-sk-tsmc",
            "s-ms-samsung-hbm4",
            "s-ms-micron26"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "铜互连",
        "封装填充材料"
      ],
      "techniques": [
        {
          "title": "核心DRAM与逻辑底座分工",
          "body": "SK hynix与TSMC合作HBM4底座及CoWoS；Micron披露其HBM4核心与底座自研自制。",
          "sourceIds": [
            "s-ms-sk-tsmc",
            "s-ms-micron26"
          ]
        },
        {
          "title": "堆叠连接与填充",
          "body": "SK hynix的MR-MUF用回流连接凸点，再用EMC填充芯片间隙，以兼顾连接、耐久与散热。",
          "sourceIds": [
            "s-ms-sk-muf"
          ]
        }
      ],
      "barriers": [
        {
          "title": "封装也会约束出货",
          "body": "层数增加时互连与散热需要同步改进；DRAM晶圆开工量不能直接当作合格HBM堆栈出货量。",
          "sourceIds": [
            "s-ms-sk-muf",
            "s-ms-sk-tsmc"
          ]
        }
      ],
      "companyIds": [
        "samsung",
        "sk-hynix",
        "micron",
        "tsmc"
      ]
    },
    {
      "id": "memory-nand",
      "parentId": "memory",
      "label": "3D NAND晶圆制造",
      "subtitle": "多层存储阵列＋外围逻辑",
      "kind": "process",
      "summary": "NAND阵列层数、每单元位数、接口及SSD控制器分别核对。",
      "claims": [
        {
          "text": "YMTC、Kioxia/Sandisk、Micron、Samsung及SK hynix公开NAND业务；SSD还包含控制器、固件和其他系统部件。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-ymtc",
            "s-ms-k2",
            "s-ms-micron26",
            "s-ms-sk-stack",
            "s-ms-samsung-nand"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "电荷存储介质",
        "金属互连"
      ],
      "techniques": [
        {
          "title": "层数与外围布局",
          "body": "Micron历史232层CuA产品把CMOS置于阵列下方；这是原理例子，不作为其2026最高代际。",
          "sourceIds": [
            "s-ms-micron-cua"
          ]
        }
      ],
      "barriers": [
        {
          "title": "多层数不等于相同比特成本",
          "body": "外围面积、plane并行度与产品规格也影响密度和性能；只比层数会漏掉这些条件。",
          "sourceIds": [
            "s-ms-micron-cua"
          ]
        }
      ],
      "companyIds": [
        "samsung",
        "sk-hynix",
        "micron",
        "ymtc",
        "kioxia",
        "sandisk",
        "solidigm"
      ]
    },
    {
      "id": "memory-bonded-nand",
      "parentId": "memory-nand",
      "label": "阵列与CMOS分片加工、再键合",
      "subtitle": "Xtacking 与 CBA是不同公司的具体实现",
      "kind": "route",
      "summary": "把外围与存储阵列的工艺优化分开，再以高密度连接组合。",
      "claims": [
        {
          "text": "YMTC Xtacking公开将外围与阵列分开加工再连接；Kioxia/Sandisk第8及第10代采用CBA。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-xtacking",
            "s-ms-k2"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "金属互连"
      ],
      "techniques": [
        {
          "title": "独立工艺窗口",
          "body": "阵列与外围不必在同一晶圆流程中同时承受所有工艺条件，再通过键合互连组合。",
          "sourceIds": [
            "s-ms-xtacking"
          ]
        }
      ],
      "barriers": [
        {
          "title": "两类晶圆与连接必须同时合格",
          "body": "分片加工增加连接与对准要求；该因果归纳不等于掌握其实际键合良率。",
          "sourceIds": [
            "s-ms-xtacking",
            "s-ms-k2"
          ]
        }
      ],
      "companyIds": [
        "ymtc",
        "kioxia",
        "sandisk"
      ]
    },
    {
      "id": "memory-nand-ownership",
      "parentId": "memory-nand",
      "label": "NAND资产与品牌边界",
      "subtitle": "Kioxia–Sandisk合资 ≠ Solidigm",
      "kind": "concept",
      "summary": "共同研发、工厂运营、产品销售及历史母公司应分开标注。",
      "claims": [
        {
          "text": "Kioxia与Sandisk共同研发投资，Kioxia Iwate运营北上；2026合资协议延至2034年底。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-jv",
            "s-ms-k2"
          ]
        },
        {
          "text": "Sandisk于2025-02-24从Western Digital分拆；Solidigm源自SK hynix收购的Intel SSD业务，Intel于2025-03-27完成NAND交易第二阶段。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-sandisk-split",
            "s-ms-solidigm",
            "s-ms-intel-nand"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "合资不等于品牌合并",
          "body": "双方的技术开发与资本投入可共同完成，但终端SSD品牌、控制器及销售仍需按产品主体核对。",
          "sourceIds": [
            "s-ms-jv",
            "s-ms-sandisk-split"
          ]
        }
      ],
      "barriers": [
        {
          "title": "不可按旧股权画供应链",
          "body": "不能继续把Sandisk当前NAND合资写成Western Digital业务，也不能将Intel列为仍独立经营同一NAND晶圆业务。",
          "sourceIds": [
            "s-ms-sandisk-split",
            "s-ms-intel-nand"
          ]
        }
      ],
      "companyIds": [
        "kioxia",
        "sandisk",
        "western-digital",
        "sk-hynix",
        "solidigm",
        "intel"
      ]
    },
    {
      "id": "specialty",
      "parentId": "manufacturing",
      "label": "模拟、电源与光子制造",
      "subtitle": "器件物理决定工艺目标",
      "kind": "domain",
      "summary": "耐压、精度、热与光学性能往往比单一逻辑线宽更能解释制造路线。",
      "claims": [
        {
          "text": "BCD将模拟、数字与功率器件集成；光子工艺还需实现调制、探测、光源及耦合等功能，不能全部按先进逻辑节点排序。",
          "kind": "analysis",
          "sourceIds": [
            "s-ms-st-bcd",
            "s-ms-gf-fotonix",
            "s-ms-lite-eml"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "碳化硅（SiC）",
        "氮化镓（GaN）",
        "磷化铟（InP）"
      ],
      "techniques": [],
      "barriers": [],
      "companyIds": [
        "texas-instruments",
        "analog-devices",
        "infineon",
        "stmicroelectronics",
        "onsemi",
        "globalfoundries",
        "tower",
        "lumentum",
        "coherent"
      ]
    },
    {
      "id": "specialty-analog",
      "parentId": "specialty",
      "label": "模拟／混合信号IDM",
      "subtitle": "自有Fab与外包可同时存在",
      "kind": "route",
      "summary": "TI、ADI、Infineon、ST与onsemi具有自有制造，仍可使用外部晶圆或封测容量。",
      "claims": [
        {
          "text": "TI选择性使用外部foundry与分包；ADI公开TSMC/JASM长期容量合作。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-ti-ar",
            "s-ms-adi-tsmc"
          ]
        },
        {
          "text": "Infineon公开foundry/OSAT伙伴及Amkor后段合作；ST及onsemi也披露外部晶圆和封测供应商。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-ifx-manufacturing",
            "s-ms-ifx-amkor",
            "s-ms-st-outsourcing",
            "s-ms-on-ar"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "自厂保留差异化工艺",
          "body": "自有工艺与外部容量可按技术、交期及资本效率组合；ADI的Limerick流程与JASM合作是两个不同证据范围。",
          "sourceIds": [
            "s-ms-adi-pcn",
            "s-ms-adi-tsmc"
          ]
        }
      ],
      "barriers": [
        {
          "title": "迁厂需要产品认证",
          "body": "ADI PCN列出受影响型号、生效时间和资格验证。公司拥有第二座厂并不代表任一产品可立即无条件转产。",
          "sourceIds": [
            "s-ms-adi-pcn"
          ]
        }
      ],
      "companyIds": [
        "texas-instruments",
        "analog-devices",
        "infineon",
        "stmicroelectronics",
        "onsemi"
      ]
    },
    {
      "id": "specialty-bcd",
      "parentId": "specialty-analog",
      "label": "BCD与高压模拟工艺",
      "subtitle": "Bipolar＋CMOS＋DMOS",
      "kind": "process",
      "summary": "同片兼顾模拟精度、数字控制和功率驱动，电压等级与隔离方式需一起看。",
      "claims": [
        {
          "text": "BCD把双极、CMOS和DMOS器件置于同一硅片流程，分别承担模拟、数字与功率功能。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-st-bcd"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "SOI（部分路线）"
      ],
      "techniques": [
        {
          "title": "按电压与集成度选平台",
          "body": "ST公开不同电压、SOI及高密度平台；同一BCD标签下存在不同器件与工艺组合。",
          "sourceIds": [
            "s-ms-st-bcd"
          ]
        }
      ],
      "barriers": [
        {
          "title": "不能按最小线宽单独排名",
          "body": "耐压、隔离和功率器件要求可能改变面积与流程；应在相同电压和应用条件比较。",
          "sourceIds": [
            "s-ms-st-bcd"
          ]
        }
      ],
      "companyIds": [
        "stmicroelectronics",
        "texas-instruments",
        "infineon",
        "hua-hong",
        "smic",
        "tower"
      ]
    },
    {
      "id": "specialty-foundry",
      "parentId": "specialty-analog",
      "label": "特色工艺晶圆代工",
      "subtitle": "华虹／中芯等提供平台，不等于模拟品牌",
      "kind": "route",
      "summary": "代工平台能力、研发阶段与具名客户订单分开。",
      "claims": [
        {
          "text": "华虹2025年报披露90nm BCD稳定量产及BCD+eFlash；中芯2024年报把低压BCD量产与90nm BCD研发阶段分别披露。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-hh-bcd",
            "s-ms-smic-bcd"
          ]
        }
      ],
      "materials": [
        "硅（Si）"
      ],
      "techniques": [
        {
          "title": "设计支持与工艺迭代",
          "body": "PDK、模型和器件族使客户完成设计导入；发布PDK、试产与稳定量产属于不同阶段。",
          "sourceIds": [
            "s-ms-smic-bcd",
            "s-ms-hh-bcd"
          ]
        }
      ],
      "barriers": [
        {
          "title": "无证据不补客户边",
          "body": "不能由华虹或中芯提供BCD推断其代工TI、ADI或某款PMIC；本图不建立这些未经披露的订单关系。",
          "sourceIds": [
            "s-ms-hh-bcd",
            "s-ms-smic-bcd"
          ]
        }
      ],
      "companyIds": [
        "hua-hong",
        "smic",
        "tower",
        "globalfoundries"
      ]
    },
    {
      "id": "specialty-power",
      "parentId": "specialty",
      "label": "功率半导体",
      "subtitle": "Si、SiC、GaN按器件和系统条件选择",
      "kind": "process",
      "summary": "材料、外延、器件结构与封装共同决定开关损耗和系统可用性。",
      "claims": [
        {
          "text": "Infineon同时布局Si、SiC、GaN；不同材料面向不同电压、频率、成本及散热要求，并非全面替代关系。",
          "kind": "analysis",
          "sourceIds": [
            "s-ms-ifx-villach"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "碳化硅（SiC）",
        "氮化镓（GaN）"
      ],
      "techniques": [
        {
          "title": "按功能分工",
          "body": "控制与驱动IC、分立开关和功率模块是不同产品层；不能把模块总成数量当作晶圆产能。",
          "sourceIds": [
            "s-ms-st-bcd",
            "s-ms-st-catania"
          ]
        }
      ],
      "barriers": [
        {
          "title": "材料提升不免除制造验证",
          "body": "晶体、外延、器件与封装都需质量控制；材料名称本身不能证明可靠性或交付规模。",
          "sourceIds": [
            "s-ms-on-sic",
            "s-ms-st-catania"
          ]
        }
      ],
      "companyIds": [
        "infineon",
        "stmicroelectronics",
        "onsemi",
        "texas-instruments"
      ]
    },
    {
      "id": "specialty-sic",
      "parentId": "specialty-power",
      "label": "SiC功率路线",
      "subtitle": "长晶／衬底→外延→器件→模块",
      "kind": "process",
      "summary": "SiC晶锭厂、SiC晶圆器件厂和模块厂是不同工序。",
      "claims": [
        {
          "text": "onsemi披露Hudson生长SiC晶锭，后续外延和器件流程在制造网络完成；ST Catania规划把衬底至模块流程集中。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-on-ar",
            "s-ms-st-catania"
          ]
        }
      ],
      "materials": [
        "碳化硅（SiC）",
        "SiC外延层"
      ],
      "techniques": [
        {
          "title": "晶体至器件反馈",
          "body": "在衬底上生长薄外延层，再进行器件加工；onsemi描述外延前后缺陷扫描和器件可靠性测试。",
          "sourceIds": [
            "s-ms-on-sic"
          ]
        }
      ],
      "barriers": [
        {
          "title": "缺陷与界面控制",
          "body": "外延前后缺陷筛查与栅氧可靠性测试需要贯穿器件制造；垂直整合本身不提供具体厂区的良率百分比。",
          "sourceIds": [
            "s-ms-on-sic"
          ]
        }
      ],
      "companyIds": [
        "onsemi",
        "stmicroelectronics",
        "infineon"
      ]
    },
    {
      "id": "specialty-gan",
      "parentId": "specialty-power",
      "label": "GaN功率路线",
      "subtitle": "GaN-on-Si与大直径流程集成",
      "kind": "process",
      "summary": "GaN是有源材料，硅可作为承载衬底；300mm不表示整片为块体GaN单晶。",
      "claims": [
        {
          "text": "ST公开GaN-on-silicon制造方向；Infineon于2024在Villach建立300mm GaN试验流程，2026资料自述首批客户产品于2025年10月推出。",
          "kind": "company-claim",
          "sourceIds": [
            "s-ms-st-network",
            "s-ms-ifx-gan",
            "s-ms-ifx-villach"
          ]
        }
      ],
      "materials": [
        "GaN外延层",
        "硅基底（GaN-on-Si路线）"
      ],
      "techniques": [
        {
          "title": "设备兼容与规模化",
          "body": "Infineon借用既有300mm硅制造设备与经验，减少新平台导入负担；仍需独立的GaN工艺和验证。",
          "sourceIds": [
            "s-ms-ifx-gan"
          ]
        }
      ],
      "barriers": [
        {
          "title": "区分技术里程碑和产能",
          "body": "试验晶圆、首批客户产品和大规模产能是不同指标；资料未给出本厂具体GaN产品的可比良率。",
          "sourceIds": [
            "s-ms-ifx-gan",
            "s-ms-ifx-villach"
          ]
        }
      ],
      "companyIds": [
        "infineon",
        "stmicroelectronics",
        "onsemi"
      ]
    },
    {
      "id": "specialty-photonics",
      "parentId": "specialty",
      "label": "光子Fab",
      "subtitle": "硅光、III-V光源与电芯片协同",
      "kind": "domain",
      "summary": "硅光代工和InP器件制造承担不同工序；光模块组装不等于晶圆制造。",
      "claims": [
        {
          "text": "GF与Tower公开提供硅光工艺平台。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-gf-fotonix",
            "s-ms-tower-ar"
          ]
        },
        {
          "text": "Lumentum与Coherent公开InP晶圆制造。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-lite-eml",
            "s-ms-cohr-inp"
          ]
        },
        {
          "text": "TSMC与Intel披露硅光集成路线，具体成熟阶段须分别核对。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-tsmc-coupe",
            "s-ms-intel-oci"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "磷化铟（InP）",
        "硅氮化物（SiN）"
      ],
      "techniques": [],
      "barriers": [],
      "companyIds": [
        "globalfoundries",
        "tower",
        "tsmc",
        "intel",
        "lumentum",
        "coherent"
      ]
    },
    {
      "id": "specialty-silicon-photonics",
      "parentId": "specialty-photonics",
      "label": "硅光代工",
      "subtitle": "波导、调制、探测及电光集成",
      "kind": "process",
      "summary": "PIC工艺平台、电子IC与最终光引擎封装不必在同一晶圆流程。",
      "claims": [
        {
          "text": "GF Fotonix可选光子＋RF CMOS或仅光子流程。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-gf-fotonix"
          ]
        },
        {
          "text": "Tower年报将Fab3的SiPho列为工厂平台。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-tower-ar"
          ]
        },
        {
          "text": "TSMC于2026公告COUPE on substrate的当年生产计划，尚不能当作完成回执。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-tsmc-coupe"
          ]
        },
        {
          "text": "Intel的2024 OCI公告明确为原型。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-intel-oci"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "SiN（部分耦合器）",
        "金属互连"
      ],
      "techniques": [
        {
          "title": "PDK与三维连接",
          "body": "GF公开调制器、耦合器及PIC TSV选项，支持EIC与PIC堆叠；这些是平台能力，不是每位客户的实际用法。",
          "sourceIds": [
            "s-ms-gf-fotonix"
          ]
        }
      ],
      "barriers": [
        {
          "title": "光纤连接与封装窗口",
          "body": "GF讨论可拆卸光纤连接和TSV，说明制造验收需要跨越晶圆器件及封装接口；不将演示视为客户批量部署。",
          "sourceIds": [
            "s-ms-gf-fotonix"
          ]
        }
      ],
      "companyIds": [
        "globalfoundries",
        "tower",
        "tsmc",
        "intel",
        "ayar"
      ]
    },
    {
      "id": "specialty-inp",
      "parentId": "specialty-photonics",
      "label": "InP激光器／光器件Fab",
      "subtitle": "III-V外延＋器件＋光学筛选",
      "kind": "process",
      "summary": "InP光源工艺不是常规硅逻辑foundry工艺的直接替代。",
      "claims": [
        {
          "text": "Lumentum说明EML在同一InP芯片集成DFB激光器与EAM；Coherent公开Sherman 150mm InP量产平台。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-lite-eml",
            "s-ms-cohr-nist"
          ]
        }
      ],
      "materials": [
        "InP",
        "III-V有源外延材料"
      ],
      "techniques": [
        {
          "title": "光源与调制器集成",
          "body": "DFB提供光载波，EAM控制吸收来调制；EML与给硅光供光的CW激光器是不同产品角色。",
          "sourceIds": [
            "s-ms-lite-eml",
            "s-ms-cohr-inp"
          ]
        }
      ],
      "barriers": [
        {
          "title": "外延、热与批次一致性",
          "body": "多阶段外延需控制杂质及晶体缺陷；高速运行的热变化会影响波长和消光比，晶圆扩径仍需保持这些指标。",
          "sourceIds": [
            "s-ms-lite-eml"
          ]
        }
      ],
      "companyIds": [
        "lumentum",
        "coherent"
      ]
    },
    {
      "id": "specialty-photonic-integration",
      "parentId": "specialty-photonics",
      "label": "光源／PIC／EIC与封装的组合",
      "subtitle": "外置光源与片上集成并存",
      "kind": "route",
      "summary": "共封装说明器件靠近，并不自动说明它们由同一种材料、同一晶圆制造。",
      "claims": [
        {
          "text": "Intel展示PIC与EIC组合的OCI原型；Lumentum外置激光路线将激光器从最热封装环境分离。两者不是同一制造架构。",
          "kind": "fact",
          "sourceIds": [
            "s-ms-intel-oci",
            "s-ms-lite-els"
          ]
        }
      ],
      "materials": [
        "硅（Si）",
        "InP",
        "金属互连与封装材料"
      ],
      "techniques": [
        {
          "title": "按成熟度读路线图",
          "body": "Lumentum UHP平台已生产，但2026展示的八波长DWDM ELSFP计划2027上半年初始可供；不能把平台成熟度迁移给新模块。",
          "sourceIds": [
            "s-ms-lite-els"
          ]
        }
      ],
      "barriers": [
        {
          "title": "维护性与热控制",
          "body": "外置可插拔光源可独立维护；集成路径则需要PIC/EIC与封装共同验证，不存在只靠一个Fab解决所有问题的证据。",
          "sourceIds": [
            "s-ms-lite-els",
            "s-ms-intel-oci"
          ]
        }
      ],
      "companyIds": [
        "intel",
        "lumentum",
        "globalfoundries",
        "tower",
        "tsmc"
      ]
    },
    {
      "id": "specialty-yield-boundary",
      "parentId": "specialty",
      "label": "怎样读Fab良率",
      "subtitle": "限定厂区、产品、期间与分母",
      "kind": "concept",
      "summary": "本图不从节点名称、晶圆直径或定性“良率改善”推算量产良率。",
      "claims": [
        {
          "text": "CXMT的DPW提升、GF的调制器良率改善描述，以及Infineon的晶圆与首批产品里程碑，都没有给出可直接比较的具体厂区产品良率百分比。",
          "kind": "analysis",
          "sourceIds": [
            "s-ms-cxmt-g5",
            "s-ms-gf-fotonix",
            "s-ms-ifx-villach"
          ]
        }
      ],
      "materials": [],
      "techniques": [
        {
          "title": "分清测试关口",
          "body": "ST把晶圆电测分选、切割封装与最终测试分列；判断合格数量必须注明测试阶段。",
          "sourceIds": [
            "s-ms-st-outsourcing"
          ]
        }
      ],
      "barriers": [
        {
          "title": "不可交换指标",
          "body": "利用率、裸片数、认证通过与可靠性失效统计不是同一个分母。未披露时保留not-disclosed。",
          "sourceIds": [
            "s-ms-st-outsourcing",
            "s-ms-adi-pcn",
            "s-ms-cxmt-g5"
          ]
        }
      ],
      "companyIds": []
    }
  ],
  "facilities": [
    {
      "id": "package-amkor-atc",
      "owner": "Amkor",
      "name": "Amkor ATC1 – Shanghai",
      "location": "中国上海",
      "category": "packaging",
      "materials": [
        "加工后的半导体晶圆/裸片",
        "封装与测试材料依产品而定"
      ],
      "processes": [
        "晶圆探针、film-frame、成品、老化与系统级测试；厂区目录列Flip Chip/WLCSP等封装"
      ],
      "products": [
        "汽车、消费、工业、通信产品"
      ],
      "status": {
        "label": "官网列示营运基地",
        "text": "截至核读日官网列出该基地及服务范围；不按目录推定任何指定AI芯片客户或产能利用率。",
        "sourceIds": [
          "c-amkor"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官网未给出该厂/具体产品/期间的可比良率数值；不填0%或公司级外推值。",
        "sourceIds": [
          "c-amkor"
        ]
      },
      "nodeIds": [
        "packaging",
        "package-die-test",
        "package-final-test"
      ],
      "sourceIds": [
        "c-amkor"
      ],
      "companyIds": [
        "amkor"
      ]
    },
    {
      "id": "package-amkor-atp",
      "owner": "Amkor",
      "name": "Amkor ATP P3/P4",
      "location": "菲律宾Biñan, Laguna",
      "category": "packaging",
      "materials": [
        "加工后的半导体晶圆/裸片",
        "封装与测试材料依产品而定"
      ],
      "processes": [
        "先进封装、MEMS/传感器制造支持；P4晶圆探针与成品测试"
      ],
      "products": [
        "电源、微控制器、MEMS等产品"
      ],
      "status": {
        "label": "官网列示营运基地",
        "text": "截至核读日官网列出该基地及服务范围；不按目录推定任何指定AI芯片客户或产能利用率。",
        "sourceIds": [
          "c-amkor"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官网未给出该厂/具体产品/期间的可比良率数值；不填0%或公司级外推值。",
        "sourceIds": [
          "c-amkor"
        ]
      },
      "nodeIds": [
        "packaging",
        "package-die-test",
        "package-final-test"
      ],
      "sourceIds": [
        "c-amkor"
      ],
      "companyIds": [
        "amkor"
      ]
    },
    {
      "id": "wafer-fac-shirakawa",
      "owner": "信越半导体株式会社（信越化学旗下）",
      "name": "白河工厂",
      "location": "日本福岛县西白河郡西乡村小田仓字大平150",
      "category": "substrate",
      "materials": [
        "Si"
      ],
      "processes": [
        "单晶生长",
        "硅片加工",
        "外延"
      ],
      "products": [
        "硅单晶",
        "抛光硅片",
        "外延硅片；厂史明确300mm生产节点"
      ],
      "status": {
        "label": "官方列示生产",
        "text": "现行厂介列示从单晶至抛光/外延一贯生产；厂史记载300mm生产，不补推2026产能。",
        "sourceIds": [
          "w-22"
        ]
      },
      "nodeIds": [
        "wafer-cz",
        "wafer-polished",
        "wafer-epitaxy"
      ],
      "sourceIds": [
        "w-22"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-22"
        ]
      },
      "companyIds": [
        "shin-etsu"
      ]
    },
    {
      "id": "wafer-fac-nagahama",
      "owner": "SUMCO CORPORATION",
      "name": "九州事业所长浜工厂",
      "location": "日本佐贺县伊万里市东山代町长浜826-1",
      "category": "substrate",
      "materials": [
        "Si"
      ],
      "processes": [
        "硅片设计、开发与制造"
      ],
      "products": [
        "半导体硅片；厂级直径及抛光/外延细分未披露"
      ],
      "status": {
        "label": "官方列示生产",
        "text": "2025年度厂区资料仍列示硅片制造；产品直径和类型不套用集团目录。",
        "sourceIds": [
          "w-24"
        ]
      },
      "nodeIds": [
        "wafer-forming"
      ],
      "sourceIds": [
        "w-23",
        "w-24"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-23",
          "w-24"
        ]
      },
      "companyIds": [
        "sumco"
      ]
    },
    {
      "id": "wafer-fac-gwa-sherman",
      "owner": "GlobalWafers America, LLC（环球晶旗下）",
      "name": "GWA Sherman基地",
      "location": "美国Texas州Sherman",
      "category": "substrate",
      "materials": [
        "Si"
      ],
      "processes": [
        "硅片制造",
        "抛光",
        "外延"
      ],
      "products": [
        "300mm抛光硅片",
        "300mm外延硅片"
      ],
      "status": {
        "label": "认证与爬坡",
        "text": "2026-08-04公告称获多家Tier-1客户资格，扩建基地持续爬坡；不是满产证明。",
        "sourceIds": [
          "w-26"
        ]
      },
      "nodeIds": [
        "wafer-polished",
        "wafer-epitaxy"
      ],
      "sourceIds": [
        "w-25",
        "w-26"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-25",
          "w-26"
        ]
      },
      "companyIds": [
        "globalwafers"
      ]
    },
    {
      "id": "wafer-fac-memc-stpeters",
      "owner": "MEMC LLC（环球晶旗下）",
      "name": "St. Peters基地",
      "location": "美国Missouri州St. Peters，501 Pearl Drive",
      "category": "substrate",
      "materials": [
        "Si",
        "SiO₂"
      ],
      "processes": [
        "SOI衬底制造"
      ],
      "products": [
        "200mm SOI",
        "300mm SOI，包括RF-SOI及硅光用途"
      ],
      "status": {
        "label": "新线逐步量产",
        "text": "2026-08-04公告称新12英寸SOI线的RF-SOI和硅光产品逐步进入量产，不外推为全部型号满产。",
        "sourceIds": [
          "w-26"
        ]
      },
      "nodeIds": [
        "wafer-soi"
      ],
      "sourceIds": [
        "w-25",
        "w-26"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-25",
          "w-26"
        ]
      },
      "companyIds": [
        "globalwafers"
      ]
    },
    {
      "id": "wafer-fac-portland",
      "owner": "Siltronic Corporation",
      "name": "Portland基地",
      "location": "美国Oregon州Portland，7200 N.W. Front Avenue",
      "category": "substrate",
      "materials": [
        "Si"
      ],
      "processes": [
        "晶圆加工",
        "抛光",
        "外延"
      ],
      "products": [
        "200mm抛光硅片",
        "200mm外延硅片"
      ],
      "status": {
        "label": "官方列示生产",
        "text": "厂级页面明确生产200mm抛光/外延片；晶体来自德国基地，不把此厂画成含长晶的完整链。",
        "sourceIds": [
          "w-27"
        ]
      },
      "nodeIds": [
        "wafer-forming",
        "wafer-polished",
        "wafer-epitaxy"
      ],
      "sourceIds": [
        "w-27"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-27"
        ]
      },
      "companyIds": [
        "siltronic"
      ]
    },
    {
      "id": "wafer-fac-gumi3",
      "owner": "SK siltron Co., Ltd.",
      "name": "Gumi Plant 3",
      "location": "韩国庆尚北道龟尾市132-11, 3gongdan 3-ro",
      "category": "substrate",
      "materials": [
        "Si"
      ],
      "processes": [
        "300mm长晶",
        "300mm晶圆加工",
        "200/300mm外延"
      ],
      "products": [
        "300mm硅片",
        "200mm及300mm外延硅片"
      ],
      "status": {
        "label": "官方列示生产",
        "text": "厂级目录列示上述工序与尺寸；未把最新扩建线的认证或达产状态另作推定。",
        "sourceIds": [
          "w-28",
          "w-29"
        ]
      },
      "nodeIds": [
        "wafer-crystal",
        "wafer-forming",
        "wafer-epitaxy"
      ],
      "sourceIds": [
        "w-28",
        "w-29"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-28",
          "w-29"
        ]
      },
      "companyIds": [
        "sk-siltron"
      ]
    },
    {
      "id": "wafer-fac-xinsheng",
      "owner": "上海新昇半导体科技有限公司",
      "name": "临港基地",
      "location": "中国上海市临港新片区云水路1000号",
      "category": "substrate",
      "materials": [
        "Si"
      ],
      "processes": [
        "300mm单晶拉制",
        "切磨抛",
        "外延"
      ],
      "products": [
        "300mm抛光硅片",
        "300mm外延硅片"
      ],
      "status": {
        "label": "历史量产已披露",
        "text": "2021年官方项目验收记录称已实现产业化量产；不把当时产能当作2026实际产能。",
        "sourceIds": [
          "w-31"
        ]
      },
      "nodeIds": [
        "wafer-cz",
        "wafer-forming",
        "wafer-polished",
        "wafer-epitaxy"
      ],
      "sourceIds": [
        "w-30",
        "w-31"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-30",
          "w-31"
        ]
      },
      "companyIds": [
        "shanghai-xinsheng"
      ]
    },
    {
      "id": "wafer-fac-yixing",
      "owner": "中环领先半导体科技股份有限公司",
      "name": "江苏宜兴基地",
      "location": "中国江苏省宜兴经济技术开发区腾飞路8号",
      "category": "substrate",
      "materials": [
        "Si"
      ],
      "processes": [
        "200/300mm半导体硅片研发与规模制造"
      ],
      "products": [
        "200/300mm半导体硅片",
        "300mm集成电路用抛光片；外延型号和厂级量产拆分未披露"
      ],
      "status": {
        "label": "规模制造／扩产另有规划",
        "text": "官网列示规模制造及2020年300mm抛光片量产；70万片/月仍标规划，不当作实际在产量。",
        "sourceIds": [
          "w-32"
        ]
      },
      "nodeIds": [
        "wafer-polished",
        "wafer-forming"
      ],
      "sourceIds": [
        "w-32",
        "w-33"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "所列基地资料未给出特定产品、期间和统计分母一致的数值良率。",
        "sourceIds": [
          "w-32",
          "w-33"
        ]
      },
      "companyIds": [
        "zhonghuan-leading"
      ]
    },
    {
      "id": "logic-fab-tsmc-15",
      "owner": "TSMC",
      "name": "Fab 15",
      "location": "中国台湾台中，中部科学园区",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "12英寸晶圆",
        "7nm（2025年末量产工艺表）"
      ],
      "products": [
        "客户集成电路；未在本来源逐产品分厂"
      ],
      "status": {
        "label": "已运营",
        "text": "20-F列为2026-02-28在营；2012年开始商业生产。",
        "sourceIds": [
          "l-tsmc-20f"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-tsmc-20f"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-tsmc-20f"
      ],
      "companyIds": [
        "tsmc"
      ]
    },
    {
      "id": "logic-fab-tsmc-18",
      "owner": "TSMC",
      "name": "Fab 18",
      "location": "中国台湾台南，南部科学园区",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "12英寸晶圆",
        "3nm（2025年末量产工艺表）"
      ],
      "products": [
        "客户集成电路；未在本来源逐产品分厂"
      ],
      "status": {
        "label": "已运营",
        "text": "20-F列为2026-02-28在营；2020年开始商业生产。",
        "sourceIds": [
          "l-tsmc-20f"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-tsmc-20f"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-tsmc-20f"
      ],
      "companyIds": [
        "tsmc"
      ]
    },
    {
      "id": "logic-fab-tsmc-16",
      "owner": "TSMC",
      "name": "Fab 16",
      "location": "中国江苏南京",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "12英寸晶圆",
        "16nm（2025年末量产工艺表）"
      ],
      "products": [
        "客户集成电路；未在本来源逐产品分厂"
      ],
      "status": {
        "label": "已运营",
        "text": "20-F列为2026-02-28在营；2018年开始商业生产。",
        "sourceIds": [
          "l-tsmc-20f"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-tsmc-20f"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-tsmc-20f"
      ],
      "companyIds": [
        "tsmc"
      ]
    },
    {
      "id": "logic-fab-tsmc-21-first",
      "owner": "TSMC Arizona",
      "name": "Fab 21 第一厂",
      "location": "美国Arizona，Phoenix",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "12英寸晶圆",
        "N4"
      ],
      "products": [
        "客户逻辑晶圆；未在本来源逐产品分厂"
      ],
      "status": {
        "label": "高量产",
        "text": "第一厂2024年第四季度开始N4高量产；第二厂N3目标仍为2027下半年，不并入本条现役状态。",
        "sourceIds": [
          "l-tsmc-20f",
          "l-tsmc-arizona"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-tsmc-20f",
          "l-tsmc-arizona"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-tsmc-20f",
        "l-tsmc-arizona"
      ],
      "companyIds": [
        "tsmc"
      ]
    },
    {
      "id": "logic-fab-intel-d1x",
      "owner": "Intel",
      "name": "D1X",
      "location": "美国Oregon，Hillsboro",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "逻辑工艺研发",
        "High-NA EUV安装与验证"
      ],
      "products": [
        "测试制造与工艺研发晶圆"
      ],
      "status": {
        "label": "研发／测试制造",
        "text": "2024年官方图片及视频说明明确为D1X测试制造厂；不将研发设备安装写成某CPU已高量产。",
        "sourceIds": [
          "l-intel-d1x"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-intel-d1x"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-intel-d1x"
      ],
      "companyIds": [
        "intel"
      ]
    },
    {
      "id": "logic-fab-intel-52",
      "owner": "Intel",
      "name": "Fab 52（Ocotillo）",
      "location": "美国Arizona，Chandler",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "Intel 18A"
      ],
      "products": [
        "Intel 18A逻辑产品；公告以Panther Lake为例"
      ],
      "status": {
        "label": "已运营／爬坡",
        "text": "2025-10公告称Fab 52 fully operational；2025年报确认Arizona 18A爬坡。本条不宣称已核实厂级HVM完成日期。",
        "sourceIds": [
          "l-intel-fab52",
          "l-intel-10k"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-intel-fab52",
          "l-intel-10k"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-intel-fab52",
        "l-intel-10k"
      ],
      "companyIds": [
        "intel"
      ]
    },
    {
      "id": "logic-fab-intel-34",
      "owner": "Intel",
      "name": "Fab 34",
      "location": "爱尔兰Leixlip",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "Intel 4",
        "Intel 3"
      ],
      "products": [
        "Intel Core Ultra",
        "Intel Xeon 6"
      ],
      "status": {
        "label": "高量产",
        "text": "2026-04-01公告明确该厂使用Intel 4与Intel 3工艺进行高量产。",
        "sourceIds": [
          "l-intel-fab34"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-intel-fab34"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-intel-fab34",
        "l-intel-fab34-location"
      ],
      "companyIds": [
        "intel"
      ]
    },
    {
      "id": "logic-fab-samsung-v1",
      "owner": "Samsung Electronics",
      "name": "V1-Line",
      "location": "韩国Hwaseong（华城）",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "12英寸晶圆",
        "EUV",
        "7nm／6nm（2020年量产记录）"
      ],
      "products": [
        "移动逻辑芯片（2020年公告）"
      ],
      "status": {
        "label": "有量产记录／当前节点未补推",
        "text": "2020-02公告证实V1开始量产7/6nm；文中3nm为后续计划，不能用这篇旧公告证明2026年当前节点。",
        "sourceIds": [
          "l-samsung-v1"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-samsung-v1"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-samsung-v1"
      ],
      "companyIds": [
        "samsung"
      ]
    },
    {
      "id": "logic-fab-samsung-austin",
      "owner": "Samsung Austin Semiconductor",
      "name": "Austin厂（S2-Line）",
      "location": "美国Texas，Austin",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "300mm晶圆",
        "28nm／14nm（官方历史里程碑）"
      ],
      "products": [
        "Mobile SoC",
        "逻辑／Foundry客户芯片"
      ],
      "status": {
        "label": "在营／历史节点可核",
        "text": "官网历史记录300mm、Mobile SoC、28/14nm及Foundry发展；本条不并入Taylor新厂，也不推定2026具体客户组合。",
        "sourceIds": [
          "l-samsung-austin",
          "l-samsung-v1"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-samsung-austin",
          "l-samsung-v1"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-samsung-austin",
        "l-samsung-v1"
      ],
      "companyIds": [
        "samsung"
      ]
    },
    {
      "id": "logic-fab-umc-12a",
      "owner": "UMC",
      "name": "Fab 12A",
      "location": "中国台湾台南",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "12英寸晶圆",
        "14nm",
        "28nm"
      ],
      "products": [
        "客户逻辑及相关工艺芯片；型号未披露"
      ],
      "status": {
        "label": "量产",
        "text": "官网列自2002年为客户量产，目前制造14/28nm。多期组成的厂区在本图作为一个代表条目。",
        "sourceIds": [
          "l-umc-12a"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-umc-12a"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-umc-12a"
      ],
      "companyIds": [
        "umc"
      ]
    },
    {
      "id": "logic-fab-gf-8",
      "owner": "GlobalFoundries",
      "name": "Malta制造基地（Fab8）",
      "location": "美国New York，Malta",
      "category": "logic",
      "materials": [
        "硅（Si），300mm",
        "SiN（Fotonix部分平台选项）"
      ],
      "processes": [
        "12LP FinFET",
        "硅光子",
        "可集成RF CMOS的Fotonix平台"
      ],
      "products": [
        "12LP客户逻辑芯片；BAE RH12方案为公开案例",
        "硅光PIC及电光芯片"
      ],
      "status": {
        "label": "逻辑及硅光生产／平台迭代",
        "text": "2025-11公告明确Malta制造及high-volume commercial 12LP；不把规划封装/光子中心当成新增在营逻辑Fab。 2025 Form20-F厂区表将Malta的SiPh列为生产；平台博客披露Fotonix选项。不能与Vermont的SiGe生产混为同一工艺，也不把未来封装中心目标当现有产能。",
        "sourceIds": [
          "l-gf-malta",
          "l-gf-12lp",
          "s-ms-gf-ar",
          "s-ms-gf-fotonix"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-gf-malta",
          "l-gf-12lp",
          "s-ms-gf-ar",
          "s-ms-gf-fotonix"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield",
        "specialty-silicon-photonics"
      ],
      "sourceIds": [
        "l-gf-malta",
        "l-gf-12lp",
        "s-ms-gf-ar",
        "s-ms-gf-fotonix"
      ],
      "companyIds": [
        "globalfoundries"
      ]
    },
    {
      "id": "logic-fab-smic-beijing",
      "owner": "中芯国际",
      "name": "中芯北京厂区",
      "location": "中国北京经济技术开发区，文昌大道18号",
      "category": "logic",
      "materials": [
        "硅晶圆"
      ],
      "processes": [
        "12英寸集成电路制造",
        "具体厂级节点未在所列资料披露"
      ],
      "products": [
        "集成电路；不指定未披露的CPU/GPU客户"
      ],
      "status": {
        "label": "已投运／持续主体可核",
        "text": "环境文件记载2004-09投运；2025年报继续列中芯北京制造销售半导体。它与中芯北方、中芯京城是不同主体。",
        "sourceIds": [
          "l-smic-beijing",
          "l-smic-annual"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "所列官方资料未给出该厂、具体产品及对应时期的可比较良率数值。",
        "sourceIds": [
          "l-smic-beijing",
          "l-smic-annual"
        ]
      },
      "nodeIds": [
        "logic-foundry-facilities",
        "logic-yield"
      ],
      "sourceIds": [
        "l-smic-beijing",
        "l-smic-annual"
      ],
      "companyIds": [
        "smic"
      ]
    },
    {
      "id": "memory-fab-samsung-p2",
      "owner": "Samsung Electronics",
      "name": "平泽 P2",
      "location": "韩国 京畿道平泽",
      "category": "memory",
      "materials": [
        "硅（Si）"
      ],
      "processes": [
        "DRAM",
        "EUV（历史1z）"
      ],
      "products": [
        "LPDDR5（2020投产公告）"
      ],
      "status": {
        "label": "已投产／代际按期核对",
        "text": "2020年公告确认P2开始1z EUV LPDDR5量产；本来源不说明2026全厂产品组合。",
        "sourceIds": [
          "s-ms-samsung-p2"
        ]
      },
      "nodeIds": [
        "memory-dram",
        "memory-lpddr"
      ],
      "sourceIds": [
        "s-ms-samsung-p2"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-samsung-p2"
        ]
      },
      "companyIds": [
        "samsung"
      ]
    },
    {
      "id": "memory-fab-sk-m15x",
      "owner": "SK hynix",
      "name": "清州 M15X",
      "location": "韩国 忠清北道清州",
      "category": "memory",
      "materials": [
        "硅（Si）"
      ],
      "processes": [
        "先进DRAM",
        "HBM核心裸片制造规划"
      ],
      "products": [
        "面向HBM等下一代DRAM"
      ],
      "status": {
        "label": "扩产／加速量产排程",
        "text": "2026年7月官方说明正在加速M15X量产排程；未给出本厂经核对的当前月产能或具体节点爬坡比例。M15X与P&T7封装项目分列。",
        "sourceIds": [
          "s-ms-sk-stack",
          "s-ms-sk-m15x"
        ]
      },
      "nodeIds": [
        "memory-dram",
        "memory-hbm"
      ],
      "sourceIds": [
        "s-ms-sk-stack",
        "s-ms-sk-m15x"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-sk-stack",
          "s-ms-sk-m15x"
        ]
      },
      "companyIds": [
        "sk-hynix"
      ]
    },
    {
      "id": "memory-fab-micron-hiroshima",
      "owner": "Micron Memory Japan",
      "name": "广岛制造基地与新洁净室项目",
      "location": "日本 广岛县东广岛市",
      "category": "memory",
      "materials": [
        "硅（Si）"
      ],
      "processes": [
        "DRAM",
        "EUV相关升级",
        "新洁净室扩建"
      ],
      "products": [
        "DRAM；面向未来HBM及AI内存的升级"
      ],
      "status": {
        "label": "既有基地运营／新扩建未投产",
        "text": "FY2026 10-K确认既有广岛基地升级；新洁净室2026年7月开工，预计2028日历年末初始产出，不能计作2026新增出货。",
        "sourceIds": [
          "s-ms-micron26"
        ]
      },
      "nodeIds": [
        "memory-dram",
        "memory-hbm"
      ],
      "sourceIds": [
        "s-ms-micron26"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-micron26"
        ]
      },
      "companyIds": [
        "micron"
      ]
    },
    {
      "id": "memory-fab-cxmt-hefei",
      "owner": "长鑫存储",
      "name": "合肥DRAM基地",
      "location": "中国 安徽合肥",
      "category": "memory",
      "materials": [
        "硅（Si）"
      ],
      "processes": [
        "DRAM阵列及外围电路"
      ],
      "products": [
        "DDR4（官网历史确认）"
      ],
      "status": {
        "label": "商业化基地／新代际厂区未逐一披露",
        "text": "官网记录2018工程样品、2019获得订单；2026 G5量产公告属于公司层面，未直接指定合肥哪条线，故不把G5参数绑定本厂。",
        "sourceIds": [
          "s-ms-cxmt",
          "s-ms-cxmt-g5"
        ]
      },
      "nodeIds": [
        "memory-dram",
        "memory-ddr",
        "memory-lpddr"
      ],
      "sourceIds": [
        "s-ms-cxmt",
        "s-ms-cxmt-g5"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-cxmt",
          "s-ms-cxmt-g5"
        ]
      },
      "companyIds": [
        "cxmt"
      ]
    },
    {
      "id": "memory-fab-ymtc-wuhan",
      "owner": "长江存储（YMTC）",
      "name": "武汉国家存储器基地（一期）",
      "location": "中国 湖北武汉",
      "category": "memory",
      "materials": [
        "硅（Si）"
      ],
      "processes": [
        "3D NAND",
        "Xtacking架构"
      ],
      "products": [
        "NAND晶圆及裸片"
      ],
      "status": {
        "label": "历史验收／公司产品量产",
        "text": "2019规划验收文件确认长江存储为一期项目主体；公司官网节选披露多代NAND量产。当前各期产线、代际分配及产能未逐厂披露，不以总部地址替代厂区证据。",
        "sourceIds": [
          "s-ms-ymtc-permit",
          "s-ms-ymtc"
        ]
      },
      "nodeIds": [
        "memory-nand",
        "memory-bonded-nand"
      ],
      "sourceIds": [
        "s-ms-ymtc",
        "s-ms-xtacking",
        "s-ms-ymtc-permit"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-ymtc",
          "s-ms-xtacking",
          "s-ms-ymtc-permit"
        ]
      },
      "companyIds": [
        "ymtc"
      ]
    },
    {
      "id": "memory-fab-kioxia-k2",
      "owner": "Kioxia Iwate Corporation（运营）；Kioxia / Sandisk合资框架",
      "name": "北上 Kitakami Fab2（K2）",
      "location": "日本 岩手县北上市",
      "category": "memory",
      "materials": [
        "硅（Si）"
      ],
      "processes": [
        "3D NAND",
        "CBA（CMOS直接键合至阵列）"
      ],
      "products": [
        "第8代及第10代3D Flash"
      ],
      "status": {
        "label": "已运营／10代开始生产",
        "text": "K2于2025年9月启用并生产8代；2026-07-03宣布开始10代生产，随后扩大量产。运营者是Kioxia Iwate，不能写作Sandisk独立运营。",
        "sourceIds": [
          "s-ms-k2",
          "s-ms-jv"
        ]
      },
      "nodeIds": [
        "memory-nand",
        "memory-bonded-nand",
        "memory-nand-ownership"
      ],
      "sourceIds": [
        "s-ms-k2",
        "s-ms-jv"
      ],
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-k2",
          "s-ms-jv"
        ]
      },
      "companyIds": [
        "kioxia",
        "sandisk"
      ]
    },
    {
      "id": "specialty-fab-ti-sm1",
      "owner": "Texas Instruments",
      "name": "Sherman SM1",
      "location": "美国 得克萨斯州Sherman",
      "category": "analog",
      "materials": [
        "硅（Si），300mm"
      ],
      "processes": [
        "模拟及嵌入式处理晶圆制造"
      ],
      "products": [
        "模拟IC",
        "嵌入式处理芯片"
      ],
      "status": {
        "label": "已投产／按需求爬坡",
        "text": "2025-12-17宣布SM1开始生产；Sherman最多四厂为总体规划，不写成SM1–SM4均已投产。",
        "sourceIds": [
          "s-ms-ti-sm1"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-ti-sm1"
        ]
      },
      "nodeIds": [
        "specialty-analog",
        "specialty-power"
      ],
      "sourceIds": [
        "s-ms-ti-sm1"
      ],
      "companyIds": [
        "texas-instruments"
      ]
    },
    {
      "id": "specialty-fab-adi-limerick",
      "owner": "Analog Devices International",
      "name": "Limerick晶圆厂（ADLK）",
      "location": "爱尔兰 Limerick",
      "category": "analog",
      "materials": [
        "硅（Si）"
      ],
      "processes": [
        "XF65产品流程（厂商名称）"
      ],
      "products": [
        "PCN列示AD8208/AD8209/AD8210/AD8211/AD8213/AD8215等型号"
      ],
      "status": {
        "label": "已有工艺／新增来源资格认证",
        "text": "2026-03-06 PCN将Limerick列为XF65产品晶圆来源，最早变更供货日期为2026-06-08。XF65不据名称推为65nm逻辑工艺。",
        "sourceIds": [
          "s-ms-adi-pcn"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-adi-pcn"
        ]
      },
      "nodeIds": [
        "specialty-analog"
      ],
      "sourceIds": [
        "s-ms-adi-pcn"
      ],
      "companyIds": [
        "analog-devices"
      ]
    },
    {
      "id": "specialty-fab-ifx-villach",
      "owner": "Infineon Technologies Austria",
      "name": "Villach Innovation Fab",
      "location": "奥地利 Villach",
      "category": "power",
      "materials": [
        "硅（Si），300mm",
        "SiC",
        "GaN-on-Si路线"
      ],
      "processes": [
        "薄硅功率器件",
        "SiC及GaN开发制造",
        "300mm GaN导入"
      ],
      "products": [
        "功率半导体；不同材料产品分开认证"
      ],
      "status": {
        "label": "制造运营／新材料持续导入",
        "text": "2026公司资料列出300mm薄硅及GaN制造里程碑，并自述首批300mm GaN客户产品在2025年10月推出；不由此给出所有材料已完全达产的结论。",
        "sourceIds": [
          "s-ms-ifx-villach",
          "s-ms-ifx-gan"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-ifx-villach",
          "s-ms-ifx-gan"
        ]
      },
      "nodeIds": [
        "specialty-power",
        "specialty-gan",
        "specialty-sic"
      ],
      "sourceIds": [
        "s-ms-ifx-villach",
        "s-ms-ifx-gan"
      ],
      "companyIds": [
        "infineon"
      ]
    },
    {
      "id": "specialty-fab-st-catania",
      "owner": "STMicroelectronics",
      "name": "Catania Silicon Carbide Campus",
      "location": "意大利 西西里Catania",
      "category": "power",
      "materials": [
        "SiC，目标200mm全流程"
      ],
      "processes": [
        "衬底",
        "外延",
        "SiC晶圆器件",
        "模块及测试封装"
      ],
      "products": [
        "SiC功率器件与模块"
      ],
      "status": {
        "label": "扩建／200mm导入计划",
        "text": "2024公告目标2026投产、2033达产；官网现列为200mm SiC重点投资升级。本条未找到截至2026-10-23可证明整个校园已达产的正式记录，保留目标口径。",
        "sourceIds": [
          "s-ms-st-catania",
          "s-ms-st-network"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-st-catania",
          "s-ms-st-network"
        ]
      },
      "nodeIds": [
        "specialty-sic",
        "specialty-power"
      ],
      "sourceIds": [
        "s-ms-st-catania",
        "s-ms-st-network"
      ],
      "companyIds": [
        "stmicroelectronics"
      ]
    },
    {
      "id": "specialty-fab-on-hudson",
      "owner": "onsemi",
      "name": "Hudson SiC晶体工厂",
      "location": "美国 New Hampshire州Hudson",
      "category": "power",
      "materials": [
        "SiC晶体"
      ],
      "processes": [
        "SiC晶锭生长"
      ],
      "products": [
        "SiC晶锭（不是在此完成的全部功率模块）"
      ],
      "status": {
        "label": "运营中的上游材料制造",
        "text": "FY2025 10-K确认Hudson制造SiC晶锭；晶圆、器件与模块在集团网络其他流程完成，不能把整个垂直链集中到Hudson。",
        "sourceIds": [
          "s-ms-on-ar",
          "s-ms-on-sic"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-on-ar",
          "s-ms-on-sic"
        ]
      },
      "nodeIds": [
        "specialty-sic"
      ],
      "sourceIds": [
        "s-ms-on-ar",
        "s-ms-on-sic"
      ],
      "companyIds": [
        "onsemi"
      ]
    },
    {
      "id": "specialty-fab-tower-npb",
      "owner": "Tower Semiconductor Newport Beach, Inc.",
      "name": "Newport Beach Fab3",
      "location": "美国 California州Newport Beach",
      "category": "photonics",
      "materials": [
        "硅（Si）",
        "SiGe及SOI（其他平台）"
      ],
      "processes": [
        "SiPho",
        "SiGe",
        "RF SOI",
        "MEMS"
      ],
      "products": [
        "硅光及模拟/RF晶圆（按客户平台）"
      ],
      "status": {
        "label": "运营中／多工艺平台",
        "text": "2025 Form20-F确认Fab3运营主体和SiPho等工艺，工厂支持几何范围0.80–0.13um不等于每款光子器件尺寸。未把NVIDIA合作绑定到未披露的Fab3订单。",
        "sourceIds": [
          "s-ms-tower-ar"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-tower-ar"
        ]
      },
      "nodeIds": [
        "specialty-silicon-photonics",
        "specialty-foundry"
      ],
      "sourceIds": [
        "s-ms-tower-ar"
      ],
      "companyIds": [
        "tower"
      ]
    },
    {
      "id": "specialty-fab-lite-sagamihara",
      "owner": "Lumentum Japan",
      "name": "Sagamihara晶圆厂",
      "location": "日本 神奈川县相模原市",
      "category": "photonics",
      "materials": [
        "InP（公司InP制造网络）"
      ],
      "processes": [
        "III-V外延及光器件晶圆制造"
      ],
      "products": [
        "InP光通信芯片；具体型号/产线未逐一披露"
      ],
      "status": {
        "label": "既有晶圆厂运营",
        "text": "2026博客列相模原为晶圆制造网络；10-K确认2024年7月购入其晶圆厂土地和建筑。不把集团200G EML出货量分配给该厂某条线。",
        "sourceIds": [
          "s-ms-lite-eml",
          "s-ms-lite-ar"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-lite-eml",
          "s-ms-lite-ar"
        ]
      },
      "nodeIds": [
        "specialty-inp"
      ],
      "sourceIds": [
        "s-ms-lite-eml",
        "s-ms-lite-ar"
      ],
      "companyIds": [
        "lumentum"
      ]
    },
    {
      "id": "specialty-fab-cohr-sherman",
      "owner": "Coherent",
      "name": "Sherman InP晶圆厂",
      "location": "美国 Texas州Sherman",
      "category": "photonics",
      "materials": [
        "InP，150mm（6英寸）"
      ],
      "processes": [
        "InP光器件晶圆制造"
      ],
      "products": [
        "AI及通信光互联光子器件"
      ],
      "status": {
        "label": "6英寸量产平台／新增扩建进行中",
        "text": "2026-06 NIST与公司公告确认已有150mm量产平台；新增扩建和拟议CHIPS资助属于后续建设，四倍产能是项目完成后目标。",
        "sourceIds": [
          "s-ms-cohr-nist",
          "s-ms-cohr-chips"
        ]
      },
      "yield": {
        "status": "not-disclosed",
        "text": "来源未给出该厂区、产品、期间及口径对应的良率百分比。",
        "sourceIds": [
          "s-ms-cohr-nist",
          "s-ms-cohr-chips"
        ]
      },
      "nodeIds": [
        "specialty-inp"
      ],
      "sourceIds": [
        "s-ms-cohr-nist",
        "s-ms-cohr-chips"
      ],
      "companyIds": [
        "coherent"
      ]
    }
  ],
  "relations": [
    {
      "id": "logic-rel-b200",
      "from": "NVIDIA",
      "to": "TSMC",
      "kind": "design-foundry",
      "product": "B200数据中心GPU／TSMC 4NP",
      "designer": "NVIDIA",
      "manufacturer": "TSMC",
      "status": "产品工艺已披露",
      "scope": "2024 Blackwell发布的双GPU裸片路线；没有具体Fab分配；不外推全部Blackwell/RTX。",
      "sourceIds": [
        "l-nvidia-b200"
      ],
      "nodeId": "logic-nvidia-gpu",
      "companyIds": [
        "nvidia",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-epyc9755",
      "from": "AMD",
      "to": "TSMC",
      "kind": "design-foundry",
      "product": "EPYC 9755／Zen 5 CCD 4nm",
      "designer": "AMD",
      "manufacturer": "TSMC",
      "status": "型号与工艺可交叉核对",
      "scope": "SKU表确认Zen 5；架构文档给4nm CCD；10-K确认先进CPU/GPU采用TSMC。未披露厂区。",
      "sourceIds": [
        "l-amd-epyc-sku",
        "l-amd-epyc-arch",
        "l-amd-10k"
      ],
      "nodeId": "logic-amd-cpu",
      "companyIds": [
        "amd",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-epyc9965",
      "from": "AMD",
      "to": "TSMC",
      "kind": "design-foundry",
      "product": "EPYC 9965／Zen 5c CCD 3nm",
      "designer": "AMD",
      "manufacturer": "TSMC",
      "status": "型号与工艺可交叉核对",
      "scope": "SKU表确认Zen 5c；架构文档给3nm CCD；不是整颗封装都为3nm。未披露厂区。",
      "sourceIds": [
        "l-amd-epyc-sku",
        "l-amd-epyc-arch",
        "l-amd-10k"
      ],
      "nodeId": "logic-amd-cpu",
      "companyIds": [
        "amd",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-epyc-iod",
      "from": "AMD",
      "to": "TSMC",
      "kind": "manufacturing",
      "product": "EPYC 9005／6nm I/O die",
      "designer": "AMD",
      "manufacturer": "TSMC",
      "status": "混合节点路线已披露",
      "scope": "6nm为独立IOD；制造商按AMD先进产品制造安排交叉核对，不填具体Fab。",
      "sourceIds": [
        "l-amd-epyc-arch",
        "l-amd-10k"
      ],
      "nodeId": "logic-amd-cpu",
      "companyIds": [
        "amd",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-mi300-xcd",
      "from": "AMD",
      "to": "TSMC",
      "kind": "design-foundry",
      "product": "MI300X／5nm计算XCD",
      "designer": "AMD",
      "manufacturer": "TSMC",
      "status": "产品工艺已披露",
      "scope": "仅计算裸片；与6nm IOD及HBM分开记录。",
      "sourceIds": [
        "l-amd-cdna3",
        "l-amd-mi300x"
      ],
      "nodeId": "logic-amd-gpu",
      "companyIds": [
        "amd",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-mi300-iod",
      "from": "AMD",
      "to": "TSMC",
      "kind": "design-foundry",
      "product": "MI300X／6nm I/O die",
      "designer": "AMD",
      "manufacturer": "TSMC",
      "status": "产品工艺已披露",
      "scope": "IOD位于计算XCD下方；本来源未给具体晶圆Fab或封装厂区。",
      "sourceIds": [
        "l-amd-cdna3",
        "l-amd-mi300x"
      ],
      "nodeId": "logic-amd-gpu",
      "companyIds": [
        "amd",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-meteor-compute",
      "from": "Intel",
      "to": "Intel",
      "kind": "manufacturing",
      "product": "Core Ultra 7 155H / Meteor Lake计算tile",
      "designer": "Intel",
      "manufacturer": "Intel",
      "status": "已上市型号与内部工艺",
      "scope": "计算tile Intel 4；155H型号和Q4 2023上市由2026手册交叉核对。不声称所有tile自制。",
      "sourceIds": [
        "l-intel-idm",
        "l-intel-handbook"
      ],
      "nodeId": "logic-intel-tiles",
      "companyIds": [
        "intel"
      ]
    },
    {
      "id": "logic-rel-meteor-support",
      "from": "Intel",
      "to": "TSMC",
      "kind": "design-foundry",
      "product": "Meteor Lake部分支持tile",
      "designer": "Intel",
      "manufacturer": "TSMC",
      "status": "2021年披露的制造计划",
      "scope": "历史计划披露部分支持tile外包；所引后续手册未核准这些tile，不作为完整量产BOM或逐tile节点、厂区证明。",
      "sourceIds": [
        "l-intel-idm"
      ],
      "nodeId": "logic-intel-tiles",
      "companyIds": [
        "intel",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-lunar",
      "from": "Intel",
      "to": "TSMC",
      "kind": "design-foundry",
      "product": "Core Ultra 9 288V / Lunar Lake",
      "designer": "Intel",
      "manufacturer": "TSMC",
      "status": "已上市型号采用TSMC N3B工艺",
      "scope": "手册Lithography为TSMC N3B、Q3 2024上市；该字段不表示封装中每块tile都使用N3B。",
      "sourceIds": [
        "l-intel-handbook",
        "l-intel-lunar"
      ],
      "nodeId": "logic-intel-tiles",
      "companyIds": [
        "intel",
        "tsmc"
      ]
    },
    {
      "id": "logic-rel-lunar-package",
      "from": "Intel",
      "to": "Intel",
      "kind": "integration",
      "product": "Lunar Lake双tile Foveros整合",
      "designer": "Intel",
      "manufacturer": "Intel（Foveros技术；厂区未披露）",
      "status": "架构与整合技术已披露",
      "scope": "这里只表示Intel提供的Foveros封装路线，不推定所有封装工序或地点均由同一企业执行。",
      "sourceIds": [
        "l-intel-lunar"
      ],
      "nodeId": "logic-intel-tiles",
      "companyIds": [
        "intel"
      ]
    },
    {
      "id": "logic-rel-tpu4-unknown",
      "from": "Google",
      "to": "晶圆制造方未披露",
      "kind": "design-foundry",
      "product": "TPU v4 / 7nm",
      "designer": "Google",
      "manufacturer": "未披露（本组直接来源）",
      "status": "节点已知／代工方未知",
      "scope": "论文Table 4提供7nm与2020部署；不能据此补填TSMC、Samsung或具体Fab。",
      "sourceIds": [
        "l-tpu-v4"
      ],
      "nodeId": "logic-tpu",
      "companyIds": [
        "google"
      ]
    },
    {
      "id": "logic-rel-google-broadcom",
      "from": "Google",
      "to": "Broadcom",
      "kind": "integration",
      "product": "未来TPU代际开发与供应（2026协议）",
      "designer": "Google / Broadcom（协议范围）",
      "manufacturer": "晶圆制造方未披露",
      "status": "合作协议已披露／未来代际",
      "scope": "8-K说明开发和供应合作；不是现役TPU v4或任何指定代际的foundry披露。",
      "sourceIds": [
        "l-broadcom-google"
      ],
      "nodeId": "logic-tpu",
      "companyIds": [
        "google",
        "broadcom"
      ]
    },
    {
      "id": "logic-rel-trn3-unknown",
      "from": "AWS / Annapurna Labs",
      "to": "晶圆制造方未披露",
      "kind": "design-foundry",
      "product": "Trainium3 / 3nm",
      "designer": "AWS / Annapurna Labs",
      "manufacturer": "未披露（本组直接来源）",
      "status": "EC2 GA／晶圆制造方未知",
      "scope": "2025-12-02公告披露3nm与GA，不提供晶圆厂或产量份额。",
      "sourceIds": [
        "l-aws-trn3",
        "l-tsmc-aws-cowos"
      ],
      "nodeId": "logic-trainium",
      "companyIds": [
        "aws"
      ]
    },
    {
      "id": "logic-rel-trainium-cowos",
      "from": "AWS / Annapurna Labs",
      "to": "TSMC",
      "kind": "integration",
      "product": "Trainium CoWoS封装（2022公告所述产品）",
      "designer": "AWS / Annapurna Labs",
      "manufacturer": "TSMC（CoWoS合作）",
      "status": "历史合作已进入生产",
      "scope": "合作范围是当时Trainium的封装设计、验证与生产；不能自动延伸到Trainium2/3晶圆制造。",
      "sourceIds": [
        "l-tsmc-aws-cowos"
      ],
      "nodeId": "logic-trainium",
      "companyIds": [
        "aws",
        "tsmc"
      ]
    },
    {
      "id": "memory-rel-gsi-tsmc",
      "to": "tsmc",
      "kind": "design-foundry",
      "product": "独立SRAM晶圆",
      "designer": "GSI Technology",
      "manufacturer": "TSMC",
      "status": "FY2026已披露制造关系",
      "scope": "晶圆代工关系已确认；未披露对应具体TSMC厂区，不补厂号。",
      "sourceIds": [
        "s-ms-gsi"
      ],
      "nodeId": "memory-discrete-sram",
      "from": "gsi-technology",
      "companyIds": [
        "gsi-technology",
        "tsmc"
      ]
    },
    {
      "id": "memory-rel-sk-tsmc",
      "to": "tsmc",
      "kind": "design-foundry",
      "product": "HBM4逻辑底座、HBM与CoWoS集成",
      "designer": "SK hynix（存储设计）",
      "manufacturer": "TSMC（先进逻辑工艺与封装协作）",
      "status": "2024-04-19公布MOU及开发分工",
      "scope": "关系范围是底座及集成协作，不能将DRAM核心晶圆全部记作TSMC代工。",
      "sourceIds": [
        "s-ms-sk-tsmc"
      ],
      "nodeId": "memory-hbm",
      "from": "sk-hynix",
      "companyIds": [
        "sk-hynix",
        "tsmc"
      ]
    },
    {
      "id": "memory-rel-sandisk-k2",
      "to": "memory-fab-kioxia-k2",
      "kind": "manufacturing",
      "product": "合资3D NAND晶圆",
      "designer": "Kioxia / Sandisk共同开发",
      "manufacturer": "Kioxia Iwate运营北上K2",
      "status": "2026-07-03开始10代生产",
      "scope": "联合研发和资本投入、Kioxia制造服务；不代表双方SSD商品完全相同。",
      "sourceIds": [
        "s-ms-jv",
        "s-ms-k2"
      ],
      "nodeId": "memory-nand-ownership",
      "from": "sandisk",
      "companyIds": [
        "sandisk",
        "kioxia"
      ]
    },
    {
      "id": "memory-rel-micron-hbm",
      "to": "micron",
      "kind": "manufacturing",
      "product": "HBM4 DRAM核心与逻辑底座",
      "designer": "Micron",
      "manufacturer": "Micron",
      "status": "FY2026 10-K披露自研自制",
      "scope": "公司层面，不把核心、底座或封装绑定到未披露的单一厂区。",
      "sourceIds": [
        "s-ms-micron26"
      ],
      "nodeId": "memory-hbm",
      "from": "micron",
      "companyIds": [
        "micron"
      ]
    },
    {
      "id": "memory-rel-sk-solidigm",
      "to": "solidigm",
      "kind": "integration",
      "product": "原Intel NAND与SSD资产",
      "designer": "Solidigm / SK hynix",
      "manufacturer": "SK hynix集团相关制造网络",
      "status": "2021设立Solidigm；2025交易第二阶段完成",
      "scope": "这是资产和组织整合关系，不是Kioxia–Sandisk合资，也不是每款Solidigm SSD的晶圆厂清单。",
      "sourceIds": [
        "s-ms-solidigm",
        "s-ms-intel-nand"
      ],
      "nodeId": "memory-nand-ownership",
      "from": "sk-hynix",
      "companyIds": [
        "sk-hynix",
        "solidigm"
      ]
    },
    {
      "id": "specialty-rel-ti-sm1",
      "from": "texas-instruments",
      "to": "specialty-fab-ti-sm1",
      "kind": "manufacturing",
      "product": "模拟及嵌入式晶圆产品",
      "designer": "Texas Instruments",
      "manufacturer": "TI Sherman SM1",
      "status": "2025-12正式宣布开始生产",
      "scope": "自制关系；公告未列全部具体型号和工艺节点。",
      "sourceIds": [
        "s-ms-ti-sm1"
      ],
      "nodeId": "specialty-analog",
      "companyIds": [
        "texas-instruments"
      ]
    },
    {
      "id": "specialty-rel-adi-jasm",
      "from": "analog-devices",
      "to": "tsmc",
      "kind": "design-foundry",
      "product": "40nm及更小节点的长期晶圆容量安排",
      "designer": "Analog Devices",
      "manufacturer": "TSMC / JASM（日本熊本）",
      "status": "2024-02-22宣布安排",
      "scope": "已披露伙伴和容量安排，不把它升级为所有产品在JASM量产或独家供货。",
      "sourceIds": [
        "s-ms-adi-tsmc"
      ],
      "nodeId": "specialty-analog",
      "companyIds": [
        "analog-devices",
        "tsmc"
      ]
    },
    {
      "id": "specialty-rel-adi-limerick",
      "from": "analog-devices",
      "to": "specialty-fab-adi-limerick",
      "kind": "manufacturing",
      "product": "PCN 26_0033列示XF65产品",
      "designer": "Analog Devices",
      "manufacturer": "ADI Limerick（ADLK）",
      "status": "2026 PCN：资格认证及最早供货日期",
      "scope": "型号以PCN Appendix A为限，不扩大到ADI所有精密模拟产品。",
      "sourceIds": [
        "s-ms-adi-pcn"
      ],
      "nodeId": "specialty-analog",
      "companyIds": [
        "analog-devices"
      ]
    },
    {
      "id": "specialty-rel-ifx-amkor",
      "from": "infineon",
      "to": "Amkor",
      "kind": "integration",
      "product": "专用封装与测试中心",
      "designer": "Infineon（器件及工程支持）",
      "manufacturer": "Amkor Porto（产线运营）",
      "status": "2024宣布合作，公告预计2025上半年启动",
      "scope": "真实具名后段外包合作；不是晶圆代工，也不是已核实的2025开线回执。",
      "sourceIds": [
        "s-ms-ifx-amkor"
      ],
      "nodeId": "specialty-analog",
      "companyIds": [
        "infineon",
        "amkor"
      ]
    },
    {
      "id": "specialty-rel-on-hudson",
      "from": "onsemi",
      "to": "specialty-fab-on-hudson",
      "kind": "manufacturing",
      "product": "SiC晶体与晶锭",
      "designer": "onsemi",
      "manufacturer": "onsemi Hudson",
      "status": "FY2025 10-K确认",
      "scope": "制造链上游；晶锭生长和晶圆器件加工分别记录。",
      "sourceIds": [
        "s-ms-on-ar"
      ],
      "nodeId": "specialty-sic",
      "companyIds": [
        "onsemi"
      ]
    },
    {
      "id": "specialty-rel-st-catania",
      "from": "stmicroelectronics",
      "to": "specialty-fab-st-catania",
      "kind": "manufacturing",
      "product": "200mm SiC衬底至功率器件及模块",
      "designer": "STMicroelectronics",
      "manufacturer": "ST Catania SiC Campus",
      "status": "2024公告建设及后续官网升级计划",
      "scope": "不将2026目标投产日和2033目标达产日写成已完成。",
      "sourceIds": [
        "s-ms-st-catania",
        "s-ms-st-network"
      ],
      "nodeId": "specialty-sic",
      "companyIds": [
        "stmicroelectronics"
      ]
    },
    {
      "id": "specialty-rel-gf-malta",
      "from": "globalfoundries",
      "to": "logic-fab-gf-8",
      "kind": "manufacturing",
      "product": "硅光晶圆",
      "designer": "客户设计团队 / GF工艺平台",
      "manufacturer": "GlobalFoundries Malta",
      "status": "2025年报列为生产",
      "scope": "工厂工艺能力；不指认未披露客户或裸片型号。",
      "sourceIds": [
        "s-ms-gf-ar"
      ],
      "nodeId": "specialty-silicon-photonics",
      "companyIds": [
        "globalfoundries"
      ]
    },
    {
      "id": "specialty-rel-ayar-gf",
      "from": "ayar",
      "to": "globalfoundries",
      "kind": "design-foundry",
      "product": "GF Fotonix硅光平台生态协作",
      "designer": "Ayar Labs",
      "manufacturer": "GlobalFoundries",
      "status": "2022-03-07公布具名合作",
      "scope": "平台合作证据；不证明当期收入、独家代工或某厂区订单规模。",
      "sourceIds": [
        "s-ms-gf-ecosystem"
      ],
      "nodeId": "specialty-silicon-photonics",
      "companyIds": [
        "ayar",
        "globalfoundries"
      ]
    },
    {
      "id": "specialty-rel-nvidia-tower",
      "from": "nvidia",
      "to": "tower",
      "kind": "design-foundry",
      "product": "面向NVIDIA网络协议的1.6T光模块硅光生态",
      "designer": "NVIDIA及光互联生态设计商",
      "manufacturer": "Tower Semiconductor（硅光代工平台）",
      "status": "2026-02-05公布生态合作",
      "scope": "Tower提供工艺平台；不是Tower自行销售完整模块，不添加未披露模块厂或采购数量。",
      "sourceIds": [
        "s-ms-tower-nvidia"
      ],
      "nodeId": "specialty-silicon-photonics",
      "companyIds": [
        "nvidia",
        "tower"
      ]
    },
    {
      "id": "specialty-rel-tower-fab3",
      "from": "tower",
      "to": "specialty-fab-tower-npb",
      "kind": "manufacturing",
      "product": "硅光及特色工艺晶圆",
      "designer": "Tower客户设计团队",
      "manufacturer": "Tower Semiconductor Newport Beach, Inc.",
      "status": "2025 Form20-F确认工厂与平台",
      "scope": "确认Fab3制造能力；不把所有公司级硅光客户都绑定到Fab3。",
      "sourceIds": [
        "s-ms-tower-ar"
      ],
      "nodeId": "specialty-silicon-photonics",
      "companyIds": [
        "tower"
      ]
    },
    {
      "id": "specialty-rel-lite-sagamihara",
      "from": "lumentum",
      "to": "specialty-fab-lite-sagamihara",
      "kind": "manufacturing",
      "product": "光通信晶圆与芯片",
      "designer": "Lumentum",
      "manufacturer": "Lumentum Japan，相模原",
      "status": "2026制造网络与10-K确认",
      "scope": "厂区存在及公司自有制造证据；未公开的型号分配、直径与良率保持空缺。",
      "sourceIds": [
        "s-ms-lite-eml",
        "s-ms-lite-ar"
      ],
      "nodeId": "specialty-inp",
      "companyIds": [
        "lumentum"
      ]
    },
    {
      "id": "specialty-rel-cohr-sherman",
      "from": "coherent",
      "to": "specialty-fab-cohr-sherman",
      "kind": "manufacturing",
      "product": "150mm InP光器件",
      "designer": "Coherent",
      "manufacturer": "Coherent Sherman",
      "status": "2026-06-16官方及NIST确认量产平台",
      "scope": "现有量产与新增扩建区分；不将资助意向等同已拨款。",
      "sourceIds": [
        "s-ms-cohr-nist",
        "s-ms-cohr-chips"
      ],
      "nodeId": "specialty-inp",
      "companyIds": [
        "coherent"
      ]
    }
  ],
  "companies": [
    {
      "id": "nvidia",
      "name": "NVIDIA",
      "role": "计算平台 / GPU / 网络 / 系统架构",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "amd",
      "name": "AMD",
      "role": "GPU / 参考设计",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "intel",
      "name": "Intel",
      "role": "CPU / 先进封装 / 晶圆代工",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "google",
      "name": "Google Cloud",
      "role": "云平台 / 自研加速器",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "aws",
      "name": "AWS",
      "role": "云平台 / 自研加速器",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "arm",
      "name": "Arm",
      "role": "CPU架构 / IP / CPU子系统",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "cerebras",
      "name": "Cerebras",
      "role": "晶圆级计算 / 系统",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "sambanova",
      "name": "SambaNova",
      "role": "dataflow / 计算系统",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "d-matrix",
      "name": "d-Matrix",
      "role": "推理芯片 / 存内计算",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "etched",
      "name": "Etched",
      "role": "推理ASIC / 系统研发",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "rebellions",
      "name": "Rebellions",
      "role": "推理芯片 / 系统 / SDK",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "sima",
      "name": "SiMa.ai",
      "role": "边缘推理 / SoM / 开发平台",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "normal",
      "name": "Normal Computing",
      "role": "物理计算 / ASIC研发",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "unconventional",
      "name": "Unconventional AI",
      "role": "硬件算法协同研发",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "cognichip",
      "name": "Cognichip",
      "role": "AI辅助芯片设计",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "ricursive",
      "name": "Ricursive Intelligence",
      "role": "AI芯片设计研发",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "altera",
      "name": "Altera",
      "role": "FPGA / 设计工具",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "huawei",
      "name": "华为 / 海思",
      "role": "CPU / 加速计算 / 电源系统",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "cambricon",
      "name": "寒武纪",
      "role": "AI芯片 / 软件平台",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "kunlunxin",
      "name": "昆仑芯",
      "role": "AI芯片 / 计算平台",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "synopsys",
      "name": "Synopsys",
      "role": "EDA / IP / memory compiler",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "cadence",
      "name": "Cadence",
      "role": "EDA / 设计优化",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "siemens",
      "name": "Siemens",
      "role": "设施电气与自动化 / EDA",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "empyrean",
      "name": "华大九天",
      "role": "SPICE仿真 / EDA",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "primarius",
      "name": "概伦电子",
      "role": "FastSPICE / EDA",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "micron",
      "name": "Micron",
      "role": "DRAM / HBM / NAND / SSD",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "samsung",
      "name": "Samsung",
      "role": "DRAM / HBM / NAND",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "sk-hynix",
      "name": "SK hynix",
      "role": "DRAM / HBM / NAND",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "cxmt",
      "name": "长鑫存储 CXMT",
      "role": "DRAM",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "rambus",
      "name": "Rambus",
      "role": "内存接口芯片 / 接口IP",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "ymtc",
      "name": "长江存储 YMTC",
      "role": "3D NAND / 晶圆集成",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "kioxia",
      "name": "Kioxia 铠侠",
      "role": "NAND / SSD / 晶圆键合",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "sandisk",
      "name": "Sandisk",
      "role": "NAND / SSD / HBF协作",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "solidigm",
      "name": "Solidigm",
      "role": "企业SSD / QLC / 存储软件",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "silicon-motion",
      "name": "慧荣 Silicon Motion",
      "role": "SSD主控 / 固件",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "maxio",
      "name": "联芸 MAXIO",
      "role": "SSD主控",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "seagate",
      "name": "Seagate",
      "role": "HDD / HAMR / 磁记录",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "western-digital",
      "name": "Western Digital",
      "role": "HDD / 磁记录",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "eaton",
      "name": "Eaton",
      "role": "配电 / 开关柜",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "schneider",
      "name": "Schneider Electric",
      "role": "配电 / 母线系统",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "infineon",
      "name": "Infineon",
      "role": "功率半导体 / 电源参考架构",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "kehua",
      "name": "科华数据 / Kehua",
      "role": "预制电力模块 / 电源系统",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "delta",
      "name": "台达 Delta",
      "role": "电源 / 磁性组件 / 液冷",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "arista",
      "name": "Arista",
      "role": "交换平台 / 网络软件",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "marvell",
      "name": "Marvell",
      "role": "光DSP / 数据连接芯片",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "credo",
      "name": "Credo（CRDO）",
      "role": "SerDes IP / AEC有源铜缆 / 光DSP / 光模块 / PCIe retimer",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "lumentum",
      "name": "Lumentum",
      "role": "EML / CW激光 / OCS",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "coherent",
      "name": "Coherent",
      "role": "激光与探测 / 光材料 / 热管理材料",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "globalfoundries",
      "name": "GlobalFoundries",
      "role": "硅光代工 / PDK",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "tower",
      "name": "Tower Semiconductor",
      "role": "硅光代工 / PDK",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "ayar",
      "name": "Ayar Labs",
      "role": "optical I/O / 多波长光源",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "innolight",
      "name": "中际旭创 / InnoLight",
      "role": "高速光模块",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "yofc",
      "name": "长飞 YOFC",
      "role": "光纤光缆 / 高密度布线",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "hengtong",
      "name": "亨通 Hengtong",
      "role": "棒纤缆 / 光网络",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "tfc",
      "name": "天孚通信 TFC",
      "role": "光器件 / FAU / 光引擎制造服务",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "optowide",
      "name": "腾景科技 Optowide",
      "role": "微光学 / 无源光器件",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "yuanjie",
      "name": "源杰科技",
      "role": "InP光芯片 / CW激光 / EML",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "sijia",
      "name": "仕佳光子",
      "role": "PLC / AWG / 光组件",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "ciena",
      "name": "Ciena",
      "role": "DCI / 相干模块 / 光线路系统",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "applied",
      "name": "Applied Materials",
      "role": "沉积 / 刻蚀 / CMP / 材料工程",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "tel",
      "name": "Tokyo Electron",
      "role": "涂显 / 刻蚀 / 沉积 / 清洗 / 探针机",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "lam",
      "name": "Lam Research",
      "role": "刻蚀 / 沉积 / NAND工艺",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "asml",
      "name": "ASML",
      "role": "光刻 / 计算光刻",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "asm",
      "name": "ASM",
      "role": "ALD / 外延",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "naura",
      "name": "北方华创",
      "role": "刻蚀 / 薄膜 / 热处理 / 湿法装备",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "aixtron",
      "name": "AIXTRON",
      "role": "MOCVD / 外延装备",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "tsmc",
      "name": "TSMC 台积电",
      "role": "晶圆代工 / SoIC / CoWoS",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "evg",
      "name": "EV Group",
      "role": "晶圆键合 / 混合键合",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "advantest",
      "name": "Advantest",
      "role": "SoC ATE",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "teradyne",
      "name": "Teradyne",
      "role": "SoC ATE",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "chroma",
      "name": "致茂 Chroma",
      "role": "SLT / 热控 / handler / 测试验证",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "formfactor",
      "name": "FormFactor",
      "role": "探针卡 / 晶圆测试",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "robotechnik",
      "name": "罗博特科 RoboTechnik",
      "role": "自动化装备 / 光子设备集团",
      "country": "中国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "ficontec",
      "name": "ficonTEC",
      "role": "光子微组装 / 主动对准 / 电光测试",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "pi",
      "name": "PI / Physik Instrumente",
      "role": "精密运动 / 主动光学对准",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "keysight",
      "name": "Keysight",
      "role": "光电测量 / 硅光晶圆测试",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "entegris",
      "name": "Entegris",
      "role": "CMP / 污染控制 / 高纯材料",
      "country": "美国",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "air-liquide",
      "name": "Air Liquide",
      "role": "电子特气 / 前驱体 / 供料",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "ajinomoto",
      "name": "味之素 Ajinomoto",
      "role": "ABF封装绝缘膜",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "merck",
      "name": "Merck",
      "role": "薄膜前驱体 / 电子化学品",
      "country": "其他地区",
      "url": "",
      "sourceIds": []
    },
    {
      "id": "soitec",
      "name": "Soitec",
      "role": "SOI等工程衬底与Smart Cut层转移",
      "country": "法国",
      "url": "https://www.soitec.com/home/technology/innovation/smart-cut",
      "sourceIds": [
        "w-09"
      ]
    },
    {
      "id": "amkor",
      "name": "Amkor",
      "role": "外包封装与测试服务",
      "country": "美国总部；多地区制造",
      "url": "https://amkor.com/test-services/",
      "sourceIds": [
        "c-amkor"
      ]
    },
    {
      "id": "shin-etsu",
      "name": "信越化学／信越半导体",
      "role": "半导体硅晶体、抛光片、外延及SOI衬底",
      "country": "日本",
      "url": "https://www.shinetsu.co.jp/en/products/electronics-materials/silicon-wafers/",
      "sourceIds": [
        "w-01",
        "w-22"
      ]
    },
    {
      "id": "sumco",
      "name": "SUMCO",
      "role": "半导体硅片与按需外延、SOI等加工",
      "country": "日本",
      "url": "https://www.sumcosi.com/english/products/process/",
      "sourceIds": [
        "w-03",
        "w-23"
      ]
    },
    {
      "id": "globalwafers",
      "name": "环球晶 GlobalWafers",
      "role": "半导体硅抛光、外延及SOI衬底",
      "country": "台湾地区",
      "url": "https://www.sas-globalwafers.com/",
      "sourceIds": [
        "w-25",
        "w-26"
      ]
    },
    {
      "id": "siltronic",
      "name": "Siltronic",
      "role": "CZ/FZ硅晶体、抛光与外延硅片",
      "country": "德国",
      "url": "https://www.siltronic.com/en/products.html",
      "sourceIds": [
        "w-04",
        "w-05",
        "w-06",
        "w-07"
      ]
    },
    {
      "id": "sk-siltron",
      "name": "SK siltron",
      "role": "硅抛光片与外延片；SiC业务另列材料路线",
      "country": "韩国",
      "url": "https://www.sksiltron.com/en/wafer/wafer.do",
      "sourceIds": [
        "w-18",
        "w-28",
        "w-29"
      ]
    },
    {
      "id": "shanghai-xinsheng",
      "name": "上海新昇",
      "role": "300mm硅抛光片与外延片制造",
      "country": "中国",
      "url": "https://www.zingsemi.com/",
      "sourceIds": [
        "w-30",
        "w-31"
      ]
    },
    {
      "id": "zhonghuan-leading",
      "name": "中环领先",
      "role": "CZ/FZ硅材料、抛光与外延等半导体材料",
      "country": "中国",
      "url": "https://www.zhlxsemicon.com/about.html",
      "sourceIds": [
        "w-32",
        "w-33"
      ]
    },
    {
      "id": "wacker",
      "name": "Wacker Chemie",
      "role": "电子级多晶硅及FZ用多晶棒",
      "country": "德国",
      "url": "https://www.wacker.com/",
      "sourceIds": [
        "w-02"
      ]
    },
    {
      "id": "hemlock",
      "name": "Hemlock Semiconductor",
      "role": "半导体硅片用超高纯多晶硅",
      "country": "美国",
      "url": "https://www.hscpoly.com/markets-technologies/electronics/",
      "sourceIds": [
        "w-15"
      ]
    },
    {
      "id": "tokuyama",
      "name": "Tokuyama 德山",
      "role": "硅片用电子级多晶硅及质量分析",
      "country": "日本",
      "url": "https://www.tokuyama.co.jp/eng/products/electronic_materials/polysilicon.html",
      "sourceIds": [
        "w-16",
        "w-34"
      ]
    },
    {
      "id": "pva-tepla",
      "name": "PVA TePla",
      "role": "CZ、FZ及其他材料长晶设备与工艺支持",
      "country": "德国",
      "url": "https://www.pvatepla.com/products-technologies/crystal-growth/",
      "sourceIds": [
        "w-12",
        "w-13",
        "w-21"
      ]
    },
    {
      "id": "ferrotec",
      "name": "Ferrotec",
      "role": "半导体级硅单晶提拉设备及配套",
      "country": "日本",
      "url": "https://www.ferrotec-global.com/tech_1_10.php",
      "sourceIds": [
        "w-14"
      ]
    },
    {
      "id": "kla",
      "name": "KLA",
      "role": "晶圆制造与电路制造的检测、量测设备；具体平台适用阶段需分别核对。",
      "country": "美国",
      "url": "https://www.kla.com/products/wafer-manufacturing/wafer-defect-inspection-review",
      "sourceIds": [
        "c-kla",
        "w-11"
      ]
    },
    {
      "id": "axt",
      "name": "AXT",
      "role": "InP、GaAs等衬底；与硅长晶分属材料路线",
      "country": "美国",
      "url": "https://www.axt.com/products",
      "sourceIds": [
        "w-17"
      ]
    },
    {
      "id": "umc",
      "name": "UMC 联华电子",
      "country": "中国台湾",
      "role": "晶圆代工；Fab12A的材料、平台与厂区状态按对应公开来源核对。",
      "url": "https://www.umc.com/en",
      "sourceIds": [
        "l-umc-12a"
      ]
    },
    {
      "id": "broadcom",
      "name": "Broadcom 博通",
      "country": "美国",
      "role": "在所列协议范围内参与Google未来TPU的开发与供应；该角色不能据此认定为晶圆制造方。",
      "url": "https://investors.broadcom.com/financial-information/sec-filings",
      "sourceIds": [
        "l-broadcom-google"
      ]
    },
    {
      "id": "gsi-technology",
      "name": "GSI Technology",
      "role": "独立SRAM设计销售，委托TSMC制造",
      "country": "美国",
      "url": "https://gsitechnology.com/",
      "sourceIds": [
        "s-ms-gsi"
      ]
    },
    {
      "id": "texas-instruments",
      "name": "Texas Instruments",
      "role": "模拟与嵌入式IDM；自有300mm晶圆厂并选择性外包",
      "country": "美国",
      "url": "https://www.ti.com/",
      "sourceIds": [
        "s-ms-ti-sm1",
        "s-ms-ti-ar"
      ]
    },
    {
      "id": "analog-devices",
      "name": "Analog Devices",
      "role": "模拟混合信号IDM；自有Limerick与外部代工协同",
      "country": "美国",
      "url": "https://www.analog.com/",
      "sourceIds": [
        "s-ms-adi-pcn",
        "s-ms-adi-tsmc"
      ]
    },
    {
      "id": "stmicroelectronics",
      "name": "STMicroelectronics",
      "role": "模拟、功率与多类特色工艺IDM",
      "country": "欧洲（跨国）",
      "url": "https://www.st.com/",
      "sourceIds": [
        "s-ms-st-bcd",
        "s-ms-st-network",
        "s-ms-st-outsourcing"
      ]
    },
    {
      "id": "onsemi",
      "name": "onsemi",
      "role": "功率与传感器IDM；SiC晶体到器件制造网络",
      "country": "美国",
      "url": "https://www.onsemi.com/",
      "sourceIds": [
        "s-ms-on-ar"
      ]
    },
    {
      "id": "hua-hong",
      "name": "华虹半导体",
      "role": "特色工艺晶圆代工；BCD及功率器件平台",
      "country": "中国",
      "url": "https://www.huahongsemiconductor.com/",
      "sourceIds": [
        "s-ms-hh-bcd"
      ]
    },
    {
      "id": "smic",
      "name": "中芯国际",
      "role": "晶圆代工；公开BCD与模拟工艺平台",
      "country": "中国",
      "url": "https://www.smics.com/",
      "sourceIds": [
        "s-ms-smic-bcd"
      ]
    }
  ]
}