{ "domains": [ { "id": "power", "title": "能源与供配电", "en": "Power & energy", "layer": "facility", "summary": "从并网、变配电到板级稳压，把可取得的电力变成持续可用的 IT 功率。", "question": "电力何时送达，哪些部件和验收环节决定实际可用容量？", "chapterIds": [ "02-power-thermal", "02b-cooling-construction" ], "topics": [ { "id": "power-grid", "title": "电网、接入与送电", "summary": "规划容量、接入容量、IT 可用容量与负载利用率分别核对。", "sectionMatches": [ "首先区分四种" ], "focus": "technology", "sourceIds": [ "N001", "N013" ] }, { "id": "power-transform", "title": "变压器与中压开关柜", "summary": "变压、保护与短路能力共同决定接入方案；扩产计划保留预计时间。", "sectionMatches": [ "每一层究竟解决什么" ], "focus": "technology", "sourceIds": [ "N012", "N013" ] }, { "id": "power-backup", "title": "UPS、发电与储能", "summary": "备用发电、UPS、园区储能与机柜备电的功率和持续时间属于不同尺度。", "sectionMatches": [ "每一层究竟解决什么" ], "focus": "technology", "sourceIds": [ "N004", "N019" ] }, { "id": "power-distribution", "title": "列头柜、母线槽与 PDU", "summary": "按电路分配、计量和维护边界辨认设备；不同架构可以替代或组合。", "sectionMatches": [ "每一层究竟解决什么" ], "focus": "technology", "sourceIds": [ "N004", "N014", "N015" ] }, { "id": "power-shelf", "title": "电源架、PSU 与直流母排", "summary": "共享电源架将整流模块接入母排，需验证冗余、热插拔和连接温升。", "sectionMatches": [ "每一层究竟解决什么", "48/54V 到 800VDC" ], "focus": "technology", "sourceIds": [ "N004" ] }, { "id": "power-vrm", "title": "DC/DC、VRM 与功率器件", "summary": "转换级、电感、驱动、功率封装和板级布局共同形成低压大电流供电。", "sectionMatches": [ "再向材料和工艺下钻" ], "focus": "technology", "sourceIds": [ "N005", "N057", "N058" ] }, { "id": "power-800v", "title": "800VDC 路线与成熟度", "summary": "混合电源架和集中列级电源中心分别记录，不用生态发布替代项目部署。", "sectionMatches": [ "48/54V 到 800VDC" ], "focus": "roadmap", "sourceIds": [ "N002", "N005" ] }, { "id": "power-economics", "title": "电力项目兑现与投资验证", "summary": "追踪送电、设备交付、验收和回款；扩产消息不能直接证明定价权。", "sectionMatches": [ "企业位置与投资检查", "PUE/WUE" ], "focus": "investment", "sourceIds": [ "N001", "N012", "N013" ] } ], "sourceIds": [ "N001", "N002", "N004", "N005", "N012", "N013" ] }, { "id": "cooling", "title": "机架、热管理与建设", "en": "Racks, cooling & facilities", "layer": "facility", "summary": "将芯片热量经冷板、液路和建筑设备送至环境，并验证整站可维护性。", "question": "冷却能力在什么温度、流量、热捕获率和冗余条件下成立？", "chapterIds": [ "02b-cooling-construction", "02-power-thermal", "00-system-architecture" ], "topics": [ { "id": "cooling-rack", "title": "机架、机柜与托盘", "summary": "机械结构、电源、线缆和液路在整机架集成；尺寸标准按具体平台核对。", "sectionMatches": [ "每一层究竟解决什么", "七个层级的进入点" ], "focus": "technology", "sourceIds": [ "N004", "N015" ] }, { "id": "cooling-interface", "title": "TIM、冷板与接触热阻", "summary": "芯片接触、冷板流道、密封和装配压力共同决定热阻与可靠性。", "sectionMatches": [ "液冷的逐层 BOM" ], "focus": "process", "sourceIds": [ "N010", "N011" ] }, { "id": "cooling-loop", "title": "歧管、快接与技术冷却环路", "summary": "将供回液、阀、软管和接液材料作为完整流路验证。", "sectionMatches": [ "三条环路不能混", "液冷的逐层 BOM" ], "focus": "technology", "sourceIds": [ "N010" ] }, { "id": "cooling-cdu", "title": "CDU、泵和控制", "summary": "CDU 包含换热、流量控制、过滤和告警；额定功率必须附工况。", "sectionMatches": [ "液冷的逐层 BOM" ], "focus": "technology", "sourceIds": [ "N008", "N010", "N054" ] }, { "id": "cooling-rejection", "title": "设施水与最终散热", "summary": "设施环路、冷机、冷却塔、干冷器和余热风冷需在当地气候下配置。", "sectionMatches": [ "三条环路不能混", "液冷的逐层 BOM" ], "focus": "technology", "sourceIds": [ "N007", "N010" ] }, { "id": "cooling-construction", "title": "选址、土建、MEP 与调试", "summary": "从土地到可运营机房，依次闭合送电、结构、机电、布线和综合调试。", "sectionMatches": [ "建设依赖图" ], "focus": "process", "sourceIds": [ "N013", "N092" ] }, { "id": "cooling-reliability", "title": "液体质量、失效与运维", "summary": "腐蚀、颗粒、漏液、停泵和控制故障需要联动测试与恢复演练。", "sectionMatches": [ "液冷的逐层 BOM", "用一个小算例看工程约束" ], "focus": "barriers", "sourceIds": [ "N010", "N013" ] }, { "id": "cooling-efficiency", "title": "PUE、WUE 与有效算力", "summary": "设施能效不等于业务产出；计量边界、负载率和可用性必须一起报告。", "sectionMatches": [ "PUE/WUE" ], "focus": "investment", "sourceIds": [ "N001", "N007" ] } ], "sourceIds": [ "N010", "N007", "N013", "N004" ] }, { "id": "compute", "title": "计算芯片与系统", "en": "Compute systems", "layer": "system", "summary": "用模型、数据移动和服务目标选择 CPU、GPU、ASIC 及其软件与系统配套。", "question": "在相同模型质量和延迟要求下，哪一段限制有效输出？", "chapterIds": [ "08-compute", "08-compute-companies", "00-system-architecture" ], "topics": [ { "id": "compute-workload", "title": "训练、prefill 与 decode", "summary": "瓶颈随批量、上下文、精度和并行策略改变，不能只按任务名称判断。", "sectionMatches": [ "先由工作负载选择硬件" ], "focus": "technology", "sourceIds": [ "R013", "R014" ] }, { "id": "compute-cpu", "title": "CPU 与主机系统", "summary": "CPU 承担控制、预处理和通用执行；其价值与主存、接口及软件共同验证。", "sectionMatches": [ "各类处理器分工" ], "focus": "technology", "sourceIds": [ "R004", "R015", "R028" ] }, { "id": "compute-gpu", "title": "GPU 与可编程加速", "summary": "矩阵计算需要内存、封装、互联与内核配合；显存类型依具体型号。", "sectionMatches": [ "各类处理器分工", "最新系统规格" ], "focus": "technology", "sourceIds": [ "R004", "R005" ] }, { "id": "compute-asic", "title": "TPU 与定制 ASIC", "summary": "架构收益要覆盖编译、算子迁移、软件维护和集群通信的长期成本。", "sectionMatches": [ "各类处理器分工", "最新系统规格" ], "focus": "technology", "sourceIds": [ "R006", "R015" ] }, { "id": "compute-alternatives", "title": "SRAM、dataflow 与晶圆级架构", "summary": "不同执行与存储组织适合不同工作负载，不按单个峰值做统一排名。", "sectionMatches": [ "参会企业的架构路线" ], "focus": "technology", "sourceIds": [ "R007", "R008", "R009", "R010" ] }, { "id": "compute-fpga-edge", "title": "FPGA 与边缘推理", "summary": "实时接口、可重配逻辑和端到端感知应用需独立于云端训练比较。", "sectionMatches": [ "各类处理器分工", "参会企业的架构路线" ], "focus": "technology", "sourceIds": [ "R016", "R023" ] }, { "id": "compute-platforms", "title": "机架平台与交付阶段", "summary": "芯片量产声明、参考设计、伙伴产品提供和云端可取得性分别核查。", "sectionMatches": [ "最新系统规格的正确读法" ], "focus": "roadmap", "sourceIds": [ "R004", "R005", "R006" ] }, { "id": "compute-benchmark", "title": "基准、SLA 与单位产出成本", "summary": "记录模型、精度、并发、延迟分布和墙插功率，检验可复现系统表现。", "sectionMatches": [ "基准结果审查卡" ], "focus": "investment", "sourceIds": [ "R012" ] } ], "sourceIds": [ "R004", "R005", "R006", "R012", "R013" ] }, { "id": "memory", "title": "内存与近计算数据层", "en": "Memory hierarchy", "layer": "system", "summary": "从片上 SRAM 到 HBM、DDR、GDDR 和 CXL，按访问语义、距离和容量分层。", "question": "哪些数据需要留在计算附近，带宽、容量和能耗如何相互制约？", "chapterIds": [ "04-memory-storage", "04b-storage-companies-investing", "08-compute", "04a-storage-systems" ], "topics": [ { "id": "memory-hierarchy", "title": "数据距离与层级", "summary": "寄存器、缓存、主存与远端容量的连接和工作语义不同，不能只按速度排队。", "sectionMatches": [ "先按数据距离与任务分层" ], "focus": "technology", "sourceIds": [ "S026", "S039" ] }, { "id": "memory-sram", "title": "片上 SRAM、cache 与 memory IP", "summary": "片上容量消耗逻辑面积和功耗，需以命中率和减少的外部流量证明价值。", "sectionMatches": [ "SRAM：为何" ], "focus": "technology", "sourceIds": [ "S032", "S059" ] }, { "id": "memory-dram", "title": "DRAM cell 与电容工艺", "summary": "访问晶体管、电容、外围逻辑和布线需要不同介质及制造窗口。", "sectionMatches": [ "DRAM：电容缩放" ], "focus": "process", "sourceIds": [ "S030", "S031" ] }, { "id": "memory-ddr", "title": "DDR、RDIMM 与接口芯片", "summary": "RCD、缓冲、PMIC、SPD 和温度感测各有作用，不等于制造 DRAM cell。", "sectionMatches": [ "DRAM：电容缩放" ], "focus": "technology", "sourceIds": [ "S036", "S037", "S038" ] }, { "id": "memory-hbm", "title": "HBM 堆栈、TSV 与逻辑底片", "summary": "前道裸片、垂直互连、堆叠与整封装测试共同决定可交付宽接口堆栈。", "sectionMatches": [ "HBM：把" ], "focus": "process", "sourceIds": [ "S026", "S056" ] }, { "id": "memory-gddr", "title": "GDDR 与 GPU 显存选择", "summary": "GDDR 与 HBM 同属 DRAM 路线，板级接口、功耗和封装依产品需求选择。", "sectionMatches": [ "用两条支线补齐架构" ], "focus": "technology", "sourceIds": [ "S060", "S066" ] }, { "id": "memory-cxl", "title": "CXL 扩展、池化与共享", "summary": "内存语义及一致性需要 CPU、交换、设备和操作系统共同支持。", "sectionMatches": [ "先按数据距离与任务分层", "从单机 SSD 到全机架数据通路" ], "focus": "technology", "sourceIds": [ "S039", "N026" ] }, { "id": "memory-roadmap", "title": "HBM 代际与认证状态", "summary": "量产出货声明与下一代送样分列；不同堆高、速度档和热条件不能拼成排名。", "sectionMatches": [ "HBM：把" ], "focus": "roadmap", "sourceIds": [ "S027", "S028", "S029" ] } ], "sourceIds": [ "S026", "S030", "S032", "S039", "S060" ] }, { "id": "storage", "title": "持久存储与数据系统", "en": "Storage & data systems", "layer": "system", "summary": "把 NAND、主控、固件、整盘及网络系统分开，再与 HDD 和归档层协同。", "question": "真实数据经过哪些介质和控制层，稳态延迟、寿命与恢复如何验证？", "chapterIds": [ "01-ssd-example", "01a-nand-process", "04a-storage-systems", "04b-storage-companies-investing" ], "topics": [ { "id": "storage-ssd", "title": "一块 SSD 的运行路径", "summary": "NVMe 命令、FTL 映射、ECC、通道和掉电保护共同完成可恢复的数据读写。", "sectionMatches": [ "先固定研究对象", "运行时：一笔写入经过什么" ], "focus": "technology", "sourceIds": [ "S001", "S017", "S016" ] }, { "id": "storage-nand", "title": "3D NAND cell、TLC 与 QLC", "summary": "电荷俘获和阈值状态承担存储；层数、每 cell 位数与封装 die 数分别观察。", "sectionMatches": [ "先理解 cell", "三种“堆叠”" ], "focus": "technology", "sourceIds": [ "S002", "S011", "S012" ] }, { "id": "storage-nand-chain", "title": "SSD 的制造、材料与设备", "summary": "从叠层、深孔、薄膜、字线和键合，追到主控封测、装配及客户认证。", "sectionMatches": [ "典型 replacement-gate", "制造时：谁把" ], "focus": "process", "sourceIds": [ "S003", "S004", "S005", "S007", "S009" ] }, { "id": "storage-controller", "title": "主控、FTL、ECC 与 PLP", "summary": "可选 DRAM、固件和保护电容共同决定整盘表现，不能只看接口峰值。", "sectionMatches": [ "SSD 的核心竞争力在控制系统" ], "focus": "technology", "sourceIds": [ "S001", "S016", "S017" ] }, { "id": "storage-system", "title": "NVMe-oF、GDS 与共享存储", "summary": "块协议、PCIe、网络和 GPU 直接访问处于不同层，系统瓶颈需端到端定位。", "sectionMatches": [ "从单机 SSD 到全机架数据通路" ], "focus": "technology", "sourceIds": [ "S020", "S040", "S041" ] }, { "id": "storage-flash-tiers", "title": "HBF、上下文缓存与高 IOPS flash", "summary": "标准、目标样片和参考架构分别标记；新层是否有效取决于访问与复用模式。", "sectionMatches": [ "HBF 和高 IOPS flash", "从单机 SSD 到全机架数据通路" ], "focus": "roadmap", "sourceIds": [ "S041", "S042", "S043", "S044" ] }, { "id": "storage-hdd-archive", "title": "HDD、HAMR 与磁带归档", "summary": "磁记录、磁头、机械控制和恢复流程形成与 NAND 不同的技术及经济模型。", "sectionMatches": [ "HDD：磁性材料", "磁带：容量" ], "focus": "technology", "sourceIds": [ "S045", "S046", "S047", "S049" ] }, { "id": "storage-validation", "title": "QoS、耐久与单位任务成本", "summary": "统一预处理、混合负载、尾延迟、写放大和数据可压缩性后比较完整系统。", "sectionMatches": [ "SSD 的核心竞争力", "从 NAND 成本到", "从技术瓶颈推导投资假说" ], "focus": "investment", "sourceIds": [ "S019", "S024", "S025" ] } ], "sourceIds": [ "S001", "S003", "S017", "S019", "S020", "S045" ] }, { "id": "network", "title": "网络、交换与系统互连", "en": "Networking & interconnect", "layer": "system", "summary": "从 PCIe/CXL 到 scale-up、scale-out 和 DCI，区分通信语义、拓扑与物理链路。", "question": "端口、网络拓扑和软件能否共同提高任务吞吐并控制故障域？", "chapterIds": [ "03-network-optics", "03c-suppliers-bottlenecks", "00-system-architecture" ], "topics": [ { "id": "network-local", "title": "PCIe、CXL 与板级连接", "summary": "root complex、交换、retimer 与设备支持共同决定本地数据路径。", "sectionMatches": [ "四层连接蓝图" ], "focus": "technology", "sourceIds": [ "N025", "N026", "N028" ] }, { "id": "network-scale-up", "title": "Scale-up 与加速器交换", "summary": "紧耦合计算域可跨越箱体或机架边界；协议、拓扑与软件同时影响能力。", "sectionMatches": [ "四层连接蓝图" ], "focus": "technology", "sourceIds": [ "N021", "N024", "N081" ] }, { "id": "network-scale-out", "title": "Scale-out、Ethernet 与 InfiniBand", "summary": "多节点通信需同时考虑 NIC、路由、拥塞控制和 collective 实现。", "sectionMatches": [ "Ethernet、RoCE、InfiniBand", "前端、后端、存储和管理网" ], "focus": "technology", "sourceIds": [ "N021", "N022", "N023" ] }, { "id": "network-topology", "title": "ToR、leaf、spine 与 rail", "summary": "部署位置、拓扑角色、网络平面及故障域分别建模，避免按机架数机械推端口。", "sectionMatches": [ "ToR、leaf、spine、rail" ], "focus": "technology", "sourceIds": [ "N022", "N083" ] }, { "id": "network-dpu", "title": "NIC、DPU 与基础设施卸载", "summary": "网络、存储及安全处理依具体可编程核和专用加速组合，不等于光模块。", "sectionMatches": [ "先纠正三个容易混的名词" ], "focus": "technology", "sourceIds": [ "N027", "R054", "R055" ] }, { "id": "network-fabrics", "title": "前端、后端、存储与管理网", "summary": "不同流量具有不同延迟、带宽、隔离和维护需求，可能分离也可能部分共用。", "sectionMatches": [ "前端、后端、存储和管理网" ], "focus": "technology", "sourceIds": [ "N021", "N022" ] }, { "id": "network-copper", "title": "DAC、ACC、AEC 与 retimer", "summary": "短距铜互连依电通道预算竞争，比较长度、速率、功耗和持续稳定性。", "sectionMatches": [ "铜线并未因光互联而消失" ], "focus": "technology", "sourceIds": [ "N028", "N031", "N089" ] }, { "id": "network-validation", "title": "订阅比、拥塞与互操作验证", "summary": "从单端口到并发作业及故障恢复逐层测试，规范发布不等于平台互通。", "sectionMatches": [ "ToR、leaf、spine、rail", "Ethernet、RoCE、InfiniBand" ], "focus": "barriers", "sourceIds": [ "N022", "N023", "N024" ] } ], "sourceIds": [ "N021", "N022", "N023", "N024", "N025", "N026" ] }, { "id": "optics", "title": "光子器件、光互联与 DCI", "en": "Photonics & optical links", "layer": "system", "summary": "把激光、PIC、EIC、光纤、模块和长距线路分层，逐段检查信号与制造链。", "question": "光电边界在哪里，器件和封装的变化如何传到系统功耗与可维护性？", "chapterIds": [ "03b-optical-components", "03c-suppliers-bottlenecks", "07b-photonics-test" ], "topics": [ { "id": "optics-signal", "title": "光链路、DSP、driver 与 TIA", "summary": "发送、调制、探测和信号恢复按方案组合；DSP 与 DPU 分属不同功能。", "sectionMatches": [ "先看信号链，再谈 CPO", "光器件与材料蓝图" ], "focus": "technology", "sourceIds": [ "N033", "N065", "N087" ] }, { "id": "optics-laser", "title": "EML、CW、VCSEL 与光源", "summary": "InP、GaAs 等器件平台服务不同链路，样片和各 SKU 批量交付分开记录。", "sectionMatches": [ "光器件与材料蓝图" ], "focus": "technology", "sourceIds": [ "N033", "N034", "N039", "N040", "R064" ] }, { "id": "optics-pic", "title": "硅光 PIC、波导与异质材料", "summary": "波导、调制、探测和复用依 PDK 与材料平台实现，光源并非必须在硅上发光。", "sectionMatches": [ "光器件与材料蓝图" ], "focus": "technology", "sourceIds": [ "N036", "N066", "N067" ] }, { "id": "optics-packaging", "title": "可插拔、LPO、NPO、CPO 与 optical I/O", "summary": "按光电边界比较电路径、热、功耗和维修成本，不预设单一路线通吃。", "sectionMatches": [ "先看信号链，再谈 CPO" ], "focus": "roadmap", "sourceIds": [ "N033", "N034", "N036", "N037" ] }, { "id": "optics-passives", "title": "光纤、连接器、FAU 与微光学", "summary": "连接、端面、极性、插损和多通道对准共同构成可部署光路。", "sectionMatches": [ "光器件与材料蓝图", "按部件寻找企业" ], "focus": "technology", "sourceIds": [ "R046", "R047", "R049", "R050", "R052" ] }, { "id": "optics-manufacturing", "title": "外延、晶圆、装配与光电测试", "summary": "从外延和晶圆加工到耦合固定与系统互通，每一层有独立生产和验收边界。", "sectionMatches": [ "制造这套器件需要什么", "测试不是一台仪器" ], "focus": "process", "sourceIds": [ "N041", "N042", "N043", "N044" ] }, { "id": "optics-dci", "title": "相干 DCI、DWDM 与线路系统", "summary": "跨园区连接需要相干模块、波分线路、放大与光纤路由，不止一只模块。", "sectionMatches": [ "数据中心之间：从短距IMDD" ], "focus": "technology", "sourceIds": [ "N046", "N065", "N088" ] }, { "id": "optics-bottlenecks", "title": "OCS、制造瓶颈与投资假说", "summary": "用客户拓扑、每小时良品、认证与验收测试假说，避免由演示推出高毛利。", "sectionMatches": [ "OCS 是另一个", "将“瓶颈”拆成六种" ], "focus": "investment", "sourceIds": [ "N070", "N042", "N043" ] } ], "sourceIds": [ "N033", "N034", "N036", "N037", "N043", "N044", "N046" ] }, { "id": "design", "title": "架构设计、EDA 与 IP", "en": "Design, EDA & IP", "layer": "silicon", "summary": "将需求转为可制造的电路、版图与封装接口；工具产效最终要通过签核和硅验证。", "question": "工具或 IP 改善哪一环，能否在固定设计、制程和约束下重现收益？", "chapterIds": [ "08-compute", "08-compute-companies", "05-fabrication", "04-memory-storage" ], "topics": [ { "id": "design-architecture", "title": "需求、架构与数据移动", "summary": "工作负载的访问方式、内存和通信需求决定体系结构和物理实现目标。", "sectionMatches": [ "先由工作负载选择硬件" ], "focus": "technology", "sourceIds": [ "R013", "R007", "R008" ] }, { "id": "design-rtl", "title": "RTL、IP 集成与功能验证", "summary": "架构、RTL/IP、验证及后续实现形成连续流程，生成代码不能替代覆盖与签核。", "sectionMatches": [ "供应链中的设计工作" ], "focus": "technology", "sourceIds": [ "R017", "R018" ] }, { "id": "design-physical", "title": "综合、布局布线与 PPA", "summary": "时序、功率和面积优化必须在可制造规则与实际设计约束下比较。", "sectionMatches": [ "供应链中的设计工作" ], "focus": "technology", "sourceIds": [ "R017", "R018" ] }, { "id": "design-ip", "title": "CPU、memory 与接口 IP", "summary": "可复用电路与预集成子系统需适配工艺、接口及系统，IP 不等于已制造器件。", "sectionMatches": [ "全球代表性计算供给", "SRAM：为何" ], "focus": "technology", "sourceIds": [ "R028", "R040", "S059" ] }, { "id": "design-pdk", "title": "PDK、foundry 适配与 signoff", "summary": "工艺规则、模型、工具认证和可用 IP 共同形成设计制造接口。", "sectionMatches": [ "先分清五种产业角色", "供应链中的设计工作" ], "focus": "technology", "sourceIds": [ "F017", "R017" ] }, { "id": "design-multidie", "title": "多 die、电源、热与可靠性协同", "summary": "封装和系统约束需提前进入设计，不在流片后才补做供电和散热检查。", "sectionMatches": [ "供应链中的设计工作" ], "focus": "technology", "sourceIds": [ "R017", "R019" ] }, { "id": "design-ai", "title": "AI EDA 与新设计公司", "summary": "设计空间搜索、辅助设计与新芯片路线交付不同对象，按实际闭环验证。", "sectionMatches": [ "参会企业的架构路线", "供应链中的设计工作" ], "focus": "roadmap", "sourceIds": [ "R017", "R018", "R026", "R027" ] }, { "id": "design-validation", "title": "工具替代、质量与经济壁垒", "summary": "单一仿真或版图工具不能推成全流程替代；比较签核质量、时间和复现条件。", "sectionMatches": [ "全球代表性计算供给", "基准结果审查卡" ], "focus": "barriers", "sourceIds": [ "R061", "R062", "R012" ] } ], "sourceIds": [ "R017", "R018", "R028", "F017" ] }, { "id": "fabrication", "title": "器件与晶圆制造", "en": "Device fabrication", "layer": "silicon", "summary": "以 FEOL、MOL 和 BEOL 的重复工序形成逻辑、存储与光电器件。", "question": "目标结构需要什么工艺窗口，如何转化为跨批次稳定良品？", "chapterIds": [ "05-fabrication", "01a-nand-process", "04-memory-storage" ], "topics": [ { "id": "fabrication-roles", "title": "设计、晶圆厂、设备与材料分工", "summary": "设计交付、器件制造、工艺机器和耗材各有边界；BEOL 不等于封装后道。", "sectionMatches": [ "先分清五种产业角色" ], "focus": "technology", "sourceIds": [ "F001", "F017" ] }, { "id": "fabrication-loop", "title": "FEOL、MOL、BEOL 主循环", "summary": "沉积、图形化、刻蚀、清洗、掺杂和量测按目标器件反复组合。", "sectionMatches": [ "制造主循环与工程验收点" ], "focus": "process", "sourceIds": [ "F001", "F002" ] }, { "id": "fabrication-gaa", "title": "FinFET、GAA 与选择性加工", "summary": "三维沟道需要多材料外延、释放、共形薄膜及界面控制。", "sectionMatches": [ "三项结构变化为何改变设备需求" ], "focus": "roadmap", "sourceIds": [ "F005", "F006" ] }, { "id": "fabrication-backside", "title": "背面供电与晶圆背面加工", "summary": "承载、减薄、背面对准、沉积和互连共同实现新的供电结构。", "sectionMatches": [ "三项结构变化为何改变设备需求" ], "focus": "roadmap", "sourceIds": [ "F004" ] }, { "id": "fabrication-dram", "title": "DRAM 电容与外围逻辑", "summary": "高深宽比电容、栅介质和后端互连具有不同几何与电学验收目标。", "sectionMatches": [ "DRAM：电容缩放" ], "focus": "process", "sourceIds": [ "S030", "S031" ] }, { "id": "fabrication-nand", "title": "NAND 叠层、深孔与字线", "summary": "扩层要同时闭合孔形、薄膜、应力、金属电阻和阵列/外围集成。", "sectionMatches": [ "典型 replacement-gate", "三项结构变化" ], "focus": "process", "sourceIds": [ "S002", "S004", "S005", "S006" ] }, { "id": "fabrication-patterning", "title": "光刻、掩模与电子束直写", "summary": "光源波长、节点名、掩模写版和晶圆曝光分别理解；直写经济性按场景比较。", "sectionMatches": [ "光刻机背后还有哪些" ], "focus": "technology", "sourceIds": [ "F003", "F018", "F020" ] }, { "id": "fabrication-yield", "title": "工艺整合、缺陷与良品成本", "summary": "单机最佳样品不代表跨腔、跨片及长期批次稳定；良率与产能共同验收。", "sectionMatches": [ "制造主循环与工程验收点" ], "focus": "barriers", "sourceIds": [ "F001", "F002", "F005" ] } ], "sourceIds": [ "F001", "F002", "F005", "F007", "S002", "S030" ] }, { "id": "equipment", "title": "制造装备与过程控制", "en": "Manufacturing equipment", "layer": "foundation", "summary": "按目标材料、结构和工序定位设备，比较最终良品产出而非产品目录长度。", "question": "设备在指定窗口下每小时交付多少合格晶圆，代价是什么？", "chapterIds": [ "05b-equipment-regions", "05-fabrication", "01a-nand-process" ], "topics": [ { "id": "equipment-lithography", "title": "光刻、track 与掩模设备", "summary": "曝光、涂显、写版和检测分属不同环节，整机与光学上游不能混算。", "sectionMatches": [ "光刻机背后还有哪些", "制造主循环" ], "focus": "technology", "sourceIds": [ "F003", "F001", "F020" ] }, { "id": "equipment-deposition", "title": "CVD、ALD、外延与 PVD", "summary": "按薄膜、共形性、杂质、应力和吞吐比较，设备方法相同不代表工艺等价。", "sectionMatches": [ "制造主循环与工程验收点" ], "focus": "technology", "sourceIds": [ "F002", "F005", "F006", "F009" ] }, { "id": "equipment-etch", "title": "刻蚀、选择性去除与深孔", "summary": "轮廓、选择比、损伤和维护共同决定可制造性，刻蚀深度不能单独作排名。", "sectionMatches": [ "典型 replacement-gate", "制造主循环" ], "focus": "technology", "sourceIds": [ "F007", "S004", "S009" ] }, { "id": "equipment-clean-cmp", "title": "清洗、CMP 与表面控制", "summary": "设备和化学品、抛光垫、过滤、干燥要一起达到缺陷与平坦度目标。", "sectionMatches": [ "制造主循环与工程验收点" ], "focus": "technology", "sourceIds": [ "F001", "F002", "F023" ] }, { "id": "equipment-implant", "title": "注入、退火与热预算", "summary": "剂量、能量、均匀性和热处理与器件结构及后续工艺协同。", "sectionMatches": [ "制造主循环与工程验收点" ], "focus": "technology", "sourceIds": [ "F002", "F009" ] }, { "id": "equipment-metrology", "title": "检测、量测与缺陷反馈", "summary": "缺陷捕获、尺寸/膜厚测量和复查承担不同任务，需兼顾误报与吞吐。", "sectionMatches": [ "制造主循环与工程验收点" ], "focus": "technology", "sourceIds": [ "F008" ] }, { "id": "equipment-subfab", "title": "真空、RF、阀、温控与尾气", "summary": "子系统决定工艺环境及服务可用性，按机型认证和每腔内容价值研究。", "sectionMatches": [ "晶圆厂也是一座精密化工厂" ], "focus": "technology", "sourceIds": [ "F014", "F015", "F016" ] }, { "id": "equipment-economics", "title": "认证、服务与单位良品成本", "summary": "将耗材、维护、停机、折旧和公用工程除以合格产出，再验证验收和回款。", "sectionMatches": [ "四个容易被投资叙事省略的成本", "制造壁垒的最短尽调清单" ], "focus": "investment", "sourceIds": [ "F005", "F007", "F036" ] } ], "sourceIds": [ "F001", "F002", "F003", "F005", "F007", "F009" ] }, { "id": "materials", "title": "材料、耗材与工程衬底", "en": "Materials & substrates", "layer": "foundation", "summary": "先确认材料所在结构及失效模式，再研究纯化、供料、加工、认证和替代成本。", "question": "它是永久功能层、牺牲层、掩模、包装材料还是设备耗材？", "chapterIds": [ "06-materials", "06b-materials-regions", "01a-nand-process", "03b-optical-components" ], "topics": [ { "id": "materials-substrate", "title": "多晶硅、硅晶圆与 SOI", "summary": "晶体基础、工程衬底和外延片承担不同功能，产能与产品不能重复计算。", "sectionMatches": [ "把材料分成五本账" ], "focus": "technology", "sourceIds": [ "F019", "F050", "F061", "F066" ] }, { "id": "materials-dielectrics", "title": "介电绝缘、high-k 与 low-k", "summary": "隔离、栅控、电容和减小布线耦合是不同任务，不存在统一最优 k 值。", "sectionMatches": [ "回答“芯片层之间用什么隔离”", "把材料分成五本账" ], "focus": "technology", "sourceIds": [ "F005", "F024", "F050", "F060" ] }, { "id": "materials-nand", "title": "NAND 隧穿、俘获、阻挡与牺牲层", "summary": "相似化学名称可以对应不同位置和工艺使命；牺牲 SiN 与存储 SiN 分开。", "sectionMatches": [ "“隔离电子的材料”到底是哪一种" ], "focus": "process", "sourceIds": [ "S002", "S009", "S011" ] }, { "id": "materials-gas", "title": "特气、前驱体与供料系统", "summary": "分子、纯度、容器、输运、残留和批次一致性一起决定是否可导入工艺。", "sectionMatches": [ "不应把“材料纯度”压成一个数字", "从“有这种化学品”" ], "focus": "technology", "sourceIds": [ "F021", "S010" ] }, { "id": "materials-patterning", "title": "光刻胶、掩模与 CMP 化学品", "summary": "图形化与平坦化材料按光源、膜层、选择性、颗粒和缺陷窗口分别认证。", "sectionMatches": [ "把材料分成五本账" ], "focus": "technology", "sourceIds": [ "F020", "F023", "F044" ] }, { "id": "materials-package", "title": "ABF、BT、底填、模封与 TIM", "summary": "基板绝缘、连接保护和传热位于不同尺度，供应者角色和收入分开统计。", "sectionMatches": [ "封装与散热材料" ], "focus": "technology", "sourceIds": [ "F024", "F046", "F055", "F056" ] }, { "id": "materials-opto-power", "title": "InP、GaAs、SiN、SiC 与 GaN", "summary": "发光、导光、高压转换和热扩散需按具体产品位置及加工路线研究。", "sectionMatches": [ "光电与功率材料：跨入机房系统", "光器件与材料蓝图" ], "focus": "technology", "sourceIds": [ "F050", "F053", "N033", "N067" ] }, { "id": "materials-qualification", "title": "客户认证、新材料与替代风险", "summary": "优异物性需经过界面、加工、可靠性、成本、量产和回款的逐步验证。", "sectionMatches": [ "三类可证伪的产业假设" ], "focus": "investment", "sourceIds": [ "F025", "F052", "F064" ] } ], "sourceIds": [ "F019", "F021", "F023", "F024", "F050", "S009" ] }, { "id": "packaging", "title": "封装、组装与电光测试", "en": "Packaging, assembly & test", "layer": "silicon", "summary": "把裸片组合成可运行系统，借助前置筛选、互连、热机械设计和测试控制损失。", "question": "哪些新增失效必须在何处发现，单颗良品成本是否实测下降？", "chapterIds": [ "07-packaging-test", "07b-photonics-test", "04-memory-storage", "06-materials" ], "topics": [ { "id": "packaging-topology", "title": "2.5D、3D、interposer 与 RDL", "summary": "横向和垂直互连可同时出现，平台名不能替代实际拓扑及工序范围。", "sectionMatches": [ "先读连接拓扑，再读封装品牌" ], "focus": "technology", "sourceIds": [ "F026", "F027", "F028" ] }, { "id": "packaging-tsv", "title": "TSV、减薄与背面互连", "summary": "穿硅、露出、绝缘、填充和背面布线要核对承包的具体前后段范围。", "sectionMatches": [ "一条典型先进封装链", "HBM：把" ], "focus": "process", "sourceIds": [ "F048", "S056" ] }, { "id": "packaging-bonding", "title": "微凸点、TCB 与混合键合", "summary": "清洁、表面平坦度、精密贴装及热机械行为共同形成连接工艺。", "sectionMatches": [ "先读连接拓扑", "一条典型先进封装链" ], "focus": "process", "sourceIds": [ "F029", "F030", "F058" ] }, { "id": "packaging-materials", "title": "基板、底填、模封与散热", "summary": "将保护、外部连接和传热纳入封装，不把所有价值归入键合设备。", "sectionMatches": [ "一条典型先进封装链", "封装与散热材料" ], "focus": "technology", "sourceIds": [ "F024", "F055" ] }, { "id": "packaging-kgd", "title": "晶圆参数测试、ATE 与 KGD", "summary": "探针台、探针卡和测试仪职责不同；KGD 只是既定覆盖条件下通过筛选。", "sectionMatches": [ "电测试的插入点与设备生态" ], "focus": "technology", "sourceIds": [ "F001", "F032", "F034" ] }, { "id": "packaging-final", "title": "FT、handler、burn-in 与 SLT", "summary": "测试单元由仪器、接口、热控、搬运和程序组成，系统级测试不替代全部 ATE。", "sectionMatches": [ "电测试的插入点与设备生态" ], "focus": "technology", "sourceIds": [ "F033", "F035" ] }, { "id": "packaging-photonics", "title": "主动对准、固化与光电晶圆测试", "summary": "闭环对准、固定漂移、光电校准和有效节拍共同决定可制造性。", "sectionMatches": [ "先把“光测试”拆开", "为什么“XYZ 三轴移动”" ], "focus": "barriers", "sourceIds": [ "F036", "F037", "N043", "N044" ] }, { "id": "packaging-robo", "title": "罗博特科、ficonTEC 与可证伪壁垒", "summary": "并购、产品能力、客户验收和财务兑现分开；六轴能力本身不是独家证据。", "sectionMatches": [ "罗博特科：确认的事实", "为什么“XYZ 三轴移动”", "把技术故事落到" ], "focus": "investment", "sourceIds": [ "F038", "F039", "F037", "F082", "N043" ] } ], "sourceIds": [ "F026", "F027", "F029", "F032", "F034", "F036", "F037", "F038" ] } ], "companies": [ { "id": "nvidia", "name": "NVIDIA", "region": "美国", "place": "美国", "roles": [ "计算平台", "GPU", "网络", "系统架构" ], "domainIds": [ "compute", "network", "memory", "power", "storage" ], "summary": "计算、网络与机架平台协同；产品公布、伙伴供货和实际部署分阶段核对。", "sourceIds": [ "R004", "N021", "N002", "S041" ] }, { "id": "amd", "name": "AMD", "region": "美国", "place": "美国", "roles": [ "GPU", "参考设计" ], "domainIds": [ "compute", "memory", "network" ], "summary": "Instinct 与 Helios 资料提供加速器及参考系统入口，工程测算需保留条件。", "sourceIds": [ "R005" ] }, { "id": "intel", "name": "Intel", "region": "美国", "place": "美国；制造网络跨地区", "roles": [ "CPU", "先进封装", "晶圆代工" ], "domainIds": [ "compute", "packaging", "fabrication" ], "summary": "处理器与 EMIB/Foveros 封装业务分别验证；公开路线不等于所有型号均已交付。", "sourceIds": [ "R033", "F028" ] }, { "id": "google", "name": "Google Cloud", "region": "美国", "place": "美国", "roles": [ "云平台", "自研加速器" ], "domainIds": [ "compute", "memory", "network" ], "summary": "TPU 的芯片、pod、ICI 与数据中心网络分别定义，不等同独立芯片零售供给。", "sourceIds": [ "R006" ] }, { "id": "aws", "name": "AWS", "region": "美国", "place": "美国", "roles": [ "云平台", "自研加速器" ], "domainIds": [ "compute", "memory", "network" ], "summary": "Trainium 与 UltraServer 通过云服务提供系统能力，实例价格不等于芯片成本。", "sourceIds": [ "R015" ] }, { "id": "arm", "name": "Arm", "region": "其他地区", "place": "英国；全球设计生态", "roles": [ "CPU架构", "IP", "CPU子系统" ], "domainIds": [ "compute", "design" ], "summary": "Neoverse 与 CSS 提供架构和子系统；当前产品边界还需纳入其 CPU 产品入口。", "sourceIds": [ "R028" ] }, { "id": "cerebras", "name": "Cerebras", "region": "美国", "place": "美国", "roles": [ "晶圆级计算", "系统" ], "domainIds": [ "compute", "memory" ], "summary": "WSE 与 CS 系统采用晶圆级计算及片上 SRAM；外部参数存储单独计算。", "sourceIds": [ "R007" ] }, { "id": "sambanova", "name": "SambaNova", "region": "美国", "place": "美国", "roles": [ "dataflow", "计算系统" ], "domainIds": [ "compute", "memory" ], "summary": "公开 SN40L 论文描述 dataflow 与分层内存，旧型号不能代表最新产品全部能力。", "sourceIds": [ "R008" ] }, { "id": "d-matrix", "name": "d-Matrix", "region": "美国", "place": "美国", "roles": [ "推理芯片", "存内计算" ], "domainIds": [ "compute", "memory" ], "summary": "Corsair 以 SRAM DIMC 等技术组织推理；量产表述来自公司公告。", "sourceIds": [ "R009" ] }, { "id": "etched", "name": "Etched", "region": "美国", "place": "美国", "roles": [ "推理ASIC", "系统研发" ], "domainIds": [ "compute", "memory" ], "summary": "当前官网描述回片验证和首个机架产品阶段，不能沿用早期宣传作为部署结果。", "sourceIds": [ "R010" ] }, { "id": "rebellions", "name": "Rebellions", "region": "其他地区", "place": "韩国", "roles": [ "推理芯片", "系统", "SDK" ], "domainIds": [ "compute" ], "summary": "官网提供芯片到系统产品及 SDK 入口；生产部署与经济表现仍需客户证据。", "sourceIds": [ "R022" ] }, { "id": "sima", "name": "SiMa.ai", "region": "美国", "place": "美国", "roles": [ "边缘推理", "SoM", "开发平台" ], "domainIds": [ "compute" ], "summary": "Modalix 面向边缘与物理 AI，需按整个感知到动作应用验证功耗和延迟。", "sourceIds": [ "R023" ] }, { "id": "normal", "name": "Normal Computing", "region": "美国", "place": "美国", "roles": [ "物理计算", "ASIC研发" ], "domainIds": [ "compute", "design" ], "summary": "公开页面描述物理随机计算及 ASIC 路线，路线图不等于通用 GPU 替代。", "sourceIds": [ "R024" ] }, { "id": "unconventional", "name": "Unconventional AI", "region": "美国", "place": "美国", "roles": [ "硬件算法协同研发" ], "domainIds": [ "compute", "design" ], "summary": "公开定位为硬件与算法共同演化，尚不足以建立可比较量产规格。", "sourceIds": [ "R025" ] }, { "id": "cognichip", "name": "Cognichip", "region": "美国", "place": "美国", "roles": [ "AI辅助芯片设计" ], "domainIds": [ "design" ], "summary": "ACI 定位于支持芯片设计，需验证数据授权、验证闭环和最终硅结果。", "sourceIds": [ "R027" ] }, { "id": "ricursive", "name": "Ricursive Intelligence", "region": "美国", "place": "美国", "roles": [ "AI芯片设计研发" ], "domainIds": [ "design", "compute" ], "summary": "公开定位连接 AI for chip design 与 chip design for AI，具体交付对象需逐项目确认。", "sourceIds": [ "R026" ] }, { "id": "altera", "name": "Altera", "region": "美国", "place": "美国", "roles": [ "FPGA", "设计工具" ], "domainIds": [ "compute", "design" ], "summary": "可重配逻辑、片上存储与接口面向多类系统，比较时关注时序、工具和供货。", "sourceIds": [ "R016" ] }, { "id": "huawei", "name": "华为 / 海思", "region": "中国", "place": "中国大陆", "roles": [ "CPU", "加速计算", "电源系统" ], "domainIds": [ "compute", "power" ], "summary": "鲲鹏、昇腾与数字能源属于不同产品体系，产品能力与生产及客户状态分开。", "sourceIds": [ "R059", "R034", "N019" ] }, { "id": "cambricon", "name": "寒武纪", "region": "中国", "place": "中国大陆", "roles": [ "AI芯片", "软件平台" ], "domainIds": [ "compute" ], "summary": "官方产品技术入口支持其加速计算布局，不据目录推断产量和客户份额。", "sourceIds": [ "R035" ] }, { "id": "kunlunxin", "name": "昆仑芯", "region": "中国", "place": "中国大陆", "roles": [ "AI芯片", "计算平台" ], "domainIds": [ "compute" ], "summary": "产品信息作为加速器研究入口，比较需固定软件、模型、质量及取得成本。", "sourceIds": [ "R037" ] }, { "id": "synopsys", "name": "Synopsys", "region": "美国", "place": "美国", "roles": [ "EDA", "IP", "memory compiler" ], "domainIds": [ "design", "memory" ], "summary": "DSO.ai、IP 与 memory 架构产品覆盖不同设计环节，不等于晶圆制造。", "sourceIds": [ "R017", "F017", "S032" ] }, { "id": "cadence", "name": "Cadence", "region": "美国", "place": "美国", "roles": [ "EDA", "设计优化" ], "domainIds": [ "design" ], "summary": "Cerebrus 的设计流程优化需在固定制程、约束和人工基线下验证。", "sourceIds": [ "R018" ] }, { "id": "siemens", "name": "Siemens", "region": "其他地区", "place": "德国；全球研发与服务", "roles": [ "设施电气与自动化", "EDA" ], "domainIds": [ "power", "cooling", "design" ], "summary": "数据中心设施与 EDA 工具是不同业务；Calibre 相关细节保留摘录证据状态。", "sourceIds": [ "N013", "R019" ] }, { "id": "empyrean", "name": "华大九天", "region": "中国", "place": "中国大陆", "roles": [ "SPICE仿真", "EDA" ], "domainIds": [ "design" ], "summary": "ALPS 为电路仿真工具入口，单一工具不代表全设计流程替代。", "sourceIds": [ "R061" ] }, { "id": "primarius", "name": "概伦电子", "region": "中国", "place": "中国大陆", "roles": [ "FastSPICE", "EDA" ], "domainIds": [ "design" ], "summary": "NanoSpice Pro 为 FastSPICE 产品，按具体电路和验证条件评价。", "sourceIds": [ "R062" ] }, { "id": "micron", "name": "Micron", "region": "美国", "place": "美国；跨区域制造", "roles": [ "DRAM", "HBM", "NAND", "SSD" ], "domainIds": [ "memory", "storage", "fabrication" ], "summary": "HBM、主存和 NAND/SSD 分产品及阶段验证，不把集团容量重复计入多个市场。", "sourceIds": [ "S026", "S027", "S015" ] }, { "id": "samsung", "name": "Samsung", "region": "其他地区", "place": "韩国", "roles": [ "DRAM", "HBM", "NAND" ], "domainIds": [ "memory", "storage", "fabrication" ], "summary": "HBM4 出货及 NAND 工艺进展来自官方披露，供应商指标保留各自测试口径。", "sourceIds": [ "S028", "S072" ] }, { "id": "sk-hynix", "name": "SK hynix", "region": "其他地区", "place": "韩国；跨区域业务", "roles": [ "DRAM", "HBM", "NAND" ], "domainIds": [ "memory", "storage", "fabrication" ], "summary": "HBM4E 送样与 HBF 规格协作分别记录，不自动升级为规模采用。", "sourceIds": [ "S029", "S042" ] }, { "id": "cxmt", "name": "长鑫存储 CXMT", "region": "中国", "place": "中国大陆", "roles": [ "DRAM" ], "domainIds": [ "memory", "fabrication" ], "summary": "官网列 DDR5 与 LPDDR 等产品布局，不据此声称具备同等 HBM 量产能力。", "sourceIds": [ "S033" ] }, { "id": "rambus", "name": "Rambus", "region": "美国", "place": "美国", "roles": [ "内存接口芯片", "接口IP" ], "domainIds": [ "memory", "design" ], "summary": "DDR5 配套芯片和接口 IP 与 DRAM cell 制造属于不同角色。", "sourceIds": [ "S036", "R040" ] }, { "id": "ymtc", "name": "长江存储 YMTC", "region": "中国", "place": "中国大陆", "roles": [ "3D NAND", "晶圆集成" ], "domainIds": [ "storage", "fabrication" ], "summary": "Xtacking 分别加工阵列与外围再连接；键合层次不等于封装堆 die 数量。", "sourceIds": [ "S007" ] }, { "id": "kioxia", "name": "Kioxia 铠侠", "region": "其他地区", "place": "日本", "roles": [ "NAND", "SSD", "晶圆键合" ], "domainIds": [ "storage", "fabrication" ], "summary": "BiCS 与 CBA 是 NAND 技术入口，代际、密度、层数和送样状态分别保留。", "sourceIds": [ "S003", "S013", "S014", "S073" ] }, { "id": "sandisk", "name": "Sandisk", "region": "美国", "place": "美国；与日本制造生态协作", "roles": [ "NAND", "SSD", "HBF协作" ], "domainIds": [ "storage", "fabrication" ], "summary": "从 Western Digital 分离后的 flash 实体，BiCS 联合开发与 HBF 规格协作分别核实。", "sourceIds": [ "S050", "S014", "S043" ] }, { "id": "solidigm", "name": "Solidigm", "region": "美国", "place": "美国；SK hynix集团相关业务", "roles": [ "企业SSD", "QLC", "存储软件" ], "domainIds": [ "storage" ], "summary": "以企业 SSD 和 QLC 系统优化为研究入口，不与集团 NAND/HBM 收入重复相加。", "sourceIds": [ "S023", "S024", "S025", "S062" ] }, { "id": "silicon-motion", "name": "慧荣 Silicon Motion", "region": "中国", "place": "中国台湾；跨区域业务", "roles": [ "SSD主控", "固件" ], "domainIds": [ "storage", "design" ], "summary": "控制器产品区分 NAND 通道、缓存、ECC 和 HMB，客户端能力不替代企业认证。", "sourceIds": [ "S017" ] }, { "id": "maxio", "name": "联芸 MAXIO", "region": "中国", "place": "中国大陆", "roles": [ "SSD主控" ], "domainIds": [ "storage", "design" ], "summary": "已阅 MAP1602-C 为客户端 DRAM-less 主控，不能据此推为企业盘认证。", "sourceIds": [ "R060" ] }, { "id": "seagate", "name": "Seagate", "region": "其他地区", "place": "爱尔兰注册；新加坡主要行政办公室；制造跨地区", "roles": [ "HDD", "HAMR", "磁记录" ], "domainIds": [ "storage" ], "summary": "Mozaic 平台结合介质、激光及磁头工艺，出货范围以公司披露客户条件为限。", "sourceIds": [ "S045", "S046", "R067" ] }, { "id": "western-digital", "name": "Western Digital", "region": "美国", "place": "美国；跨区域制造", "roles": [ "HDD", "磁记录" ], "domainIds": [ "storage" ], "summary": "研究 HDD 与 ePMR/HAMR 进展，flash 分拆后不与 Sandisk 业务混算。", "sourceIds": [ "S047", "S050" ] }, { "id": "eaton", "name": "Eaton", "region": "其他地区", "place": "爱尔兰都柏林全球总部；在美国等地运营制造", "roles": [ "配电", "开关柜" ], "domainIds": [ "power" ], "summary": "中压开关柜扩产公告支持设备与时间差研究，预计投产不等于当前产能。", "sourceIds": [ "N012", "R066" ] }, { "id": "schneider", "name": "Schneider Electric", "region": "其他地区", "place": "法国；全球生产与服务", "roles": [ "配电", "母线系统" ], "domainIds": [ "power", "cooling" ], "summary": "已阅母线产品资料支持数据中心配电位置，不据合作 logo 推断具体项目收入。", "sourceIds": [ "N014" ] }, { "id": "infineon", "name": "Infineon", "region": "其他地区", "place": "德国", "roles": [ "功率半导体", "电源参考架构" ], "domainIds": [ "power", "materials" ], "summary": "按不同转换级使用 Si、SiC 与 GaN，800V 架构不能等同全部器件改用 SiC。", "sourceIds": [ "N005", "F053" ] }, { "id": "kehua", "name": "科华数据 / Kehua", "region": "中国", "place": "中国大陆", "roles": [ "预制电力模块", "电源系统" ], "domainIds": [ "power", "cooling" ], "summary": "公开资料描述电、计算与冷却协同及 Power Pod，案例比例不直接外推到其他项目。", "sourceIds": [ "N018" ] }, { "id": "delta", "name": "台达 Delta", "region": "中国", "place": "中国台湾；全球制造", "roles": [ "电源", "磁性组件", "液冷" ], "domainIds": [ "power", "cooling" ], "summary": "覆盖电源与液冷；相关公开资料为搜索摘录，产品与财务口径需分别核对。", "sourceIds": [ "N020" ] }, { "id": "arista", "name": "Arista", "region": "美国", "place": "美国", "roles": [ "交换平台", "网络软件" ], "domainIds": [ "network" ], "summary": "AI fabric 部署手册覆盖拓扑、RoCE 配置及验证，端口峰值不等于任务吞吐。", "sourceIds": [ "N022" ] }, { "id": "marvell", "name": "Marvell", "region": "美国", "place": "美国", "roles": [ "光DSP", "数据连接芯片" ], "domainIds": [ "network", "optics" ], "summary": "光 DSP 是信号处理环节，与光源、模块和光线路系统分别研究。", "sourceIds": [ "N065" ] }, { "id": "lumentum", "name": "Lumentum", "region": "美国", "place": "美国；全球制造", "roles": [ "EML", "CW激光", "OCS" ], "domainIds": [ "optics" ], "summary": "EML、外置 CW 光源与 MEMS OCS 交付不同功能，不合并成单一增长故事。", "sourceIds": [ "N033", "N034", "N070" ] }, { "id": "coherent", "name": "Coherent", "region": "美国", "place": "美国；全球制造", "roles": [ "激光与探测", "光材料", "热管理材料" ], "domainIds": [ "optics", "materials" ], "summary": "光器件、化合物材料及高导热 SiC 处在不同业务层，送样不等于批量收入。", "sourceIds": [ "N039", "N040", "N087", "F064" ] }, { "id": "globalfoundries", "name": "GlobalFoundries", "region": "美国", "place": "美国；跨区域晶圆厂", "roles": [ "硅光代工", "PDK" ], "domainIds": [ "optics", "fabrication" ], "summary": "公开硅光平台涉及制造、电子光子接口与封装生态，不能推断未公开客户采用。", "sourceIds": [ "N036" ] }, { "id": "tower", "name": "Tower Semiconductor", "region": "其他地区", "place": "以色列；跨区域晶圆厂", "roles": [ "硅光代工", "PDK" ], "domainIds": [ "optics", "fabrication" ], "summary": "SiPho 平台支持光子器件研究入口，实际产品和客户规模另行验证。", "sourceIds": [ "N066" ] }, { "id": "ayar", "name": "Ayar Labs", "region": "美国", "place": "美国", "roles": [ "optical I/O", "多波长光源" ], "domainIds": [ "optics", "network" ], "summary": "TeraPHY 与 SuperNova 构成组件体系，平台量产及系统收益仍需逐项核验。", "sourceIds": [ "N037" ] }, { "id": "innolight", "name": "中际旭创 / InnoLight", "region": "中国", "place": "中国大陆；全球业务", "roles": [ "高速光模块" ], "domainIds": [ "optics" ], "summary": "AI 与数据中心产品组合支持模块能力位置，上游激光和材料来源不能据此推定。", "sourceIds": [ "N048" ] }, { "id": "yofc", "name": "长飞 YOFC", "region": "中国", "place": "中国大陆；全球业务", "roles": [ "光纤光缆", "高密度布线" ], "domainIds": [ "optics", "network" ], "summary": "预端接和干线布线与光模块是不同收入层，需验证端面、极性及插损。", "sourceIds": [ "R046", "R047" ] }, { "id": "hengtong", "name": "亨通 Hengtong", "region": "中国", "place": "中国大陆；全球业务", "roles": [ "棒纤缆", "光网络" ], "domainIds": [ "optics", "network" ], "summary": "公开产业资料覆盖光纤光缆与网络方案，不把装配地当作全部材料本地化。", "sourceIds": [ "R048" ] }, { "id": "tfc", "name": "天孚通信 TFC", "region": "中国", "place": "中国大陆；跨区域业务", "roles": [ "光器件", "FAU", "光引擎制造服务" ], "domainIds": [ "optics", "packaging" ], "summary": "产品与半年报覆盖无源、有源及制造服务，应拆产品、工艺和客户研究。", "sourceIds": [ "R049", "R065" ] }, { "id": "optowide", "name": "腾景科技 Optowide", "region": "中国", "place": "中国大陆", "roles": [ "微光学", "无源光器件" ], "domainIds": [ "optics" ], "summary": "目录覆盖准直、隔离、VOA 和 WDM 等组件，认证与各 SKU 批量规模另核。", "sourceIds": [ "R050" ] }, { "id": "yuanjie", "name": "源杰科技", "region": "中国", "place": "中国大陆", "roles": [ "InP光芯片", "CW激光", "EML" ], "domainIds": [ "optics", "fabrication" ], "summary": "半年报分开披露 CW、100G EML 批量与 200G EML 客户验证，不能混为全部量产。", "sourceIds": [ "R051", "R064" ] }, { "id": "sijia", "name": "仕佳光子", "region": "中国", "place": "中国大陆", "roles": [ "PLC", "AWG", "光组件" ], "domainIds": [ "optics" ], "summary": "PLC/AWG 平台及组件是公开能力入口，不推断其覆盖完整光模块链条。", "sourceIds": [ "R052", "R057" ] }, { "id": "ciena", "name": "Ciena", "region": "美国", "place": "美国；全球业务", "roles": [ "DCI", "相干模块", "光线路系统" ], "domainIds": [ "network", "optics" ], "summary": "覆盖园区、城域和骨干等连接层，模块规格不能替代线路预算与路由工程。", "sourceIds": [ "N046" ] }, { "id": "applied", "name": "Applied Materials", "region": "美国", "place": "美国；全球设备服务", "roles": [ "沉积", "刻蚀", "CMP", "材料工程" ], "domainIds": [ "equipment", "fabrication", "packaging" ], "summary": "多工艺设备平台按具体步骤、结构和客户验收比较，不能整体视作某一种设备。", "sourceIds": [ "F002", "F004", "S002", "S006", "S030", "S056" ] }, { "id": "tel", "name": "Tokyo Electron", "region": "其他地区", "place": "日本；全球设备服务", "roles": [ "涂显", "刻蚀", "沉积", "清洗", "探针机" ], "domainIds": [ "equipment", "fabrication", "packaging" ], "summary": "工艺设备及探针机覆盖不同功能，深孔技术展示不等于全厂吞吐。", "sourceIds": [ "F001", "S004" ] }, { "id": "lam", "name": "Lam Research", "region": "美国", "place": "美国；全球设备服务", "roles": [ "刻蚀", "沉积", "NAND工艺" ], "domainIds": [ "equipment", "fabrication" ], "summary": "高层 NAND 方案同时涉及孔形、字线、薄膜及应力，按具体工艺窗口验证。", "sourceIds": [ "F007", "S005" ] }, { "id": "asml", "name": "ASML", "region": "其他地区", "place": "荷兰；全球供应网络", "roles": [ "光刻", "计算光刻" ], "domainIds": [ "equipment" ], "summary": "EUV 和 DUV 的光源、光学及工艺不同，波长不能当作制造节点名称。", "sourceIds": [ "F003", "F054" ] }, { "id": "asm", "name": "ASM", "region": "其他地区", "place": "荷兰；全球设备服务", "roles": [ "ALD", "外延" ], "domainIds": [ "equipment", "fabrication" ], "summary": "共形薄膜和外延能力按材料、形貌、杂质及吞吐条件比较。", "sourceIds": [ "F005", "F006" ] }, { "id": "naura", "name": "北方华创", "region": "中国", "place": "中国大陆", "roles": [ "刻蚀", "薄膜", "热处理", "湿法装备" ], "domainIds": [ "equipment", "fabrication" ], "summary": "官网多产品系列支持能力地图，目录覆盖不证明全部先进流程替代。", "sourceIds": [ "F009" ] }, { "id": "aixtron", "name": "AIXTRON", "region": "其他地区", "place": "德国；全球设备服务", "roles": [ "MOCVD", "外延装备" ], "domainIds": [ "equipment", "optics" ], "summary": "外延设备服务化合物半导体材料体系；具体机型、产能与客户认证须按产品资料核对。", "sourceIds": [ "N041" ] }, { "id": "tsmc", "name": "TSMC 台积电", "region": "中国", "place": "中国台湾；跨区域制造", "roles": [ "晶圆代工", "SoIC", "CoWoS" ], "domainIds": [ "fabrication", "packaging" ], "summary": "SoIC 三维集成可进入 CoWoS，平台名不能当作互斥技术或任意组合的保证。", "sourceIds": [ "F026", "F027" ] }, { "id": "evg", "name": "EV Group", "region": "其他地区", "place": "奥地利", "roles": [ "晶圆键合", "混合键合" ], "domainIds": [ "equipment", "packaging" ], "summary": "键合涉及表面、清洁、载体和放置流程，按 W2W/D2W 等步骤核对。", "sourceIds": [ "F029", "F058" ] }, { "id": "advantest", "name": "Advantest", "region": "其他地区", "place": "日本；全球测试生态", "roles": [ "SoC ATE" ], "domainIds": [ "packaging" ], "summary": "V93000 是电测试平台，需与探针、接口、热控及程序构成完整测试单元。", "sourceIds": [ "F032" ] }, { "id": "teradyne", "name": "Teradyne", "region": "美国", "place": "美国；全球测试生态", "roles": [ "SoC ATE" ], "domainIds": [ "packaging" ], "summary": "UltraFLEXplus 平台的并行、复用与测试时间影响每颗合格器件成本。", "sourceIds": [ "F033" ] }, { "id": "chroma", "name": "致茂 Chroma", "region": "中国", "place": "中国台湾；全球测试生态", "roles": [ "SLT", "热控", "handler", "测试验证" ], "domainIds": [ "packaging" ], "summary": "验证生态包括系统级、高功率热控、接触和搬运，不能推成所有 GPU 测试独家。", "sourceIds": [ "F035" ] }, { "id": "formfactor", "name": "FormFactor", "region": "美国", "place": "美国；全球测试生态", "roles": [ "探针卡", "晶圆测试" ], "domainIds": [ "packaging", "optics" ], "summary": "DRAM/HBM KGD 探针与光子测试方案承担不同测试接口和校准任务。", "sourceIds": [ "F034", "N078" ] }, { "id": "robotechnik", "name": "罗博特科 RoboTechnik", "region": "中国", "place": "中国大陆；含德国ficonTEC业务", "roles": [ "自动化装备", "光子设备集团" ], "domainIds": [ "packaging", "optics" ], "summary": "已披露完成 ficonTEC 相关实体收购；集团光伏与光子业务需分开研究。", "sourceIds": [ "F038", "F039" ] }, { "id": "ficontec", "name": "ficonTEC", "region": "其他地区", "place": "德国；罗博特科相关业务", "roles": [ "光子微组装", "主动对准", "电光测试" ], "domainIds": [ "packaging", "optics", "equipment" ], "summary": "对准、固定和电光测试组成制造流程，六轴能力本身不证明独家性。", "sourceIds": [ "F036", "F037", "N042" ] }, { "id": "pi", "name": "PI / Physik Instrumente", "region": "其他地区", "place": "德国；全球精密运动业务", "roles": [ "精密运动", "主动光学对准" ], "domainIds": [ "packaging", "optics", "equipment" ], "summary": "公开六自由度主动对准方案说明多轴能力有替代供给，整机流程仍需逐条件比较。", "sourceIds": [ "N043", "F082" ] }, { "id": "keysight", "name": "Keysight", "region": "美国", "place": "美国；全球测量业务", "roles": [ "光电测量", "硅光晶圆测试" ], "domainIds": [ "packaging", "optics" ], "summary": "NX5402A 提供自动光电晶圆测试和校准入口，不能由仪器功能推客户良率。", "sourceIds": [ "N044" ] }, { "id": "entegris", "name": "Entegris", "region": "美国", "place": "美国；全球材料网络", "roles": [ "CMP", "污染控制", "高纯材料" ], "domainIds": [ "materials" ], "summary": "清洗、CMP 与高纯方案的价值在配方、过滤、缺陷和过程相容性共同达标。", "sourceIds": [ "F023", "S008", "S009" ] }, { "id": "air-liquide", "name": "Air Liquide", "region": "其他地区", "place": "法国；全球供气与材料网络", "roles": [ "电子特气", "前驱体", "供料" ], "domainIds": [ "materials" ], "summary": "先进材料包含分子、超纯容器和合格输运，现场供气与罐装材料业务分开。", "sourceIds": [ "F021" ] }, { "id": "ajinomoto", "name": "味之素 Ajinomoto", "region": "其他地区", "place": "日本", "roles": [ "ABF封装绝缘膜" ], "domainIds": [ "materials", "packaging" ], "summary": "ABF 用于封装基板增层绝缘，膜厂、基板制造和封装服务属于不同角色。", "sourceIds": [ "F024" ] }, { "id": "merck", "name": "Merck", "region": "其他地区", "place": "德国；全球电子材料业务", "roles": [ "薄膜前驱体", "电子化学品" ], "domainIds": [ "materials" ], "summary": "薄膜材料平台覆盖有机硅、有机金属和介质等方向，目录不证明具体客户配方采用。", "sourceIds": [ "S010" ] }, { "id": "soitec", "name": "Soitec", "region": "其他地区", "place": "法国；跨区域工程衬底", "roles": [ "SOI", "光子工程衬底" ], "domainIds": [ "materials", "optics" ], "summary": "Photonics-SOI 位于材料衬底层，不等于完整 PIC 或光模块。", "sourceIds": [ "F050" ] } ], "edges": [ { "id": "power-compute", "to": "compute", "type": "power", "label": "供配电支持持续计算负载", "sourceIds": [ "N004", "N005" ], "from": "power" }, { "id": "power-cooling", "to": "cooling", "type": "power", "label": "泵、控制与设施冷却需要供电", "sourceIds": [ "N010", "N013" ], "from": "power" }, { "id": "compute-cooling", "to": "cooling", "type": "thermal", "label": "芯片热量经接触面进入冷却系统", "sourceIds": [ "N010", "N011" ], "from": "compute" }, { "id": "memory-compute", "to": "compute", "type": "data", "label": "主存与本地显存向计算提供数据", "sourceIds": [ "S026", "S032" ], "from": "memory" }, { "id": "storage-compute", "to": "compute", "type": "data", "label": "模型、数据集和检查点进入计算系统", "sourceIds": [ "S040", "S041" ], "from": "storage" }, { "id": "compute-network", "to": "network", "type": "data", "label": "计算节点通过本地与集群互连交换数据", "sourceIds": [ "N021", "N022" ], "from": "compute" }, { "id": "storage-network", "to": "network", "type": "data", "label": "远端存储通过网络提供数据服务", "sourceIds": [ "S020", "S025" ], "from": "storage" }, { "id": "network-optics", "to": "optics", "type": "data", "label": "部分网络链路借助光电收发与光纤实现", "sourceIds": [ "N033", "N036", "N046" ], "from": "network" }, { "id": "design-fab", "to": "fabrication", "type": "enables", "label": "版图、PDK 与签核定义制造接口", "sourceIds": [ "F017", "R017" ], "from": "design" }, { "id": "design-package", "to": "packaging", "type": "enables", "label": "多die、电热与封装约束进入设计流程", "sourceIds": [ "R017", "F026" ], "from": "design" }, { "id": "materials-equipment", "to": "equipment", "type": "enables", "label": "供料、耗材和腔体环境支撑工艺设备", "sourceIds": [ "F021", "F023", "F009" ], "from": "materials" }, { "id": "materials-fab", "to": "fabrication", "type": "manufacturing", "label": "衬底与功能薄膜进入器件制造", "sourceIds": [ "F019", "F021", "F005" ], "from": "materials" }, { "id": "equipment-fab", "to": "fabrication", "type": "manufacturing", "label": "设备执行沉积、图形化、刻蚀与量测", "sourceIds": [ "F001", "F002", "F003" ], "from": "equipment" }, { "id": "fab-package", "to": "packaging", "type": "manufacturing", "label": "晶圆与裸片经过筛选后进入集成流程", "sourceIds": [ "F001", "F026", "F034" ], "from": "fabrication" }, { "id": "materials-package", "to": "packaging", "type": "manufacturing", "label": "基板绝缘、底填和界面材料参与封装", "sourceIds": [ "F024", "F055" ], "from": "materials" }, { "id": "equipment-package", "to": "packaging", "type": "manufacturing", "label": "贴装、键合和检测装备支撑封装工序", "sourceIds": [ "F029", "F032", "F037" ], "from": "equipment" }, { "id": "package-compute", "to": "compute", "type": "manufacturing", "label": "裸片互连与热管理形成可运行计算器件", "sourceIds": [ "F026", "F027", "F028" ], "from": "packaging" }, { "id": "fab-memory", "to": "memory", "type": "manufacturing", "label": "SRAM和DRAM器件工艺形成内存基础", "sourceIds": [ "S030", "S032" ], "from": "fabrication" }, { "id": "fab-storage", "to": "storage", "type": "manufacturing", "label": "NAND制造与主控逻辑分别进入SSD链", "sourceIds": [ "S003", "S007", "S017" ], "from": "fabrication" }, { "id": "fab-optics", "to": "optics", "type": "manufacturing", "label": "外延和晶圆加工形成光子与光电器件", "sourceIds": [ "N036", "N041" ], "from": "fabrication" }, { "id": "package-optics", "to": "optics", "type": "manufacturing", "label": "光子贴装、耦合固定与电光测试", "sourceIds": [ "F036", "F037", "N044" ], "from": "packaging" } ], "partnerships": [ { "id": "hbf-standard", "companyIds": [ "sandisk", "sk-hynix" ], "title": "HBF 规格协作", "summary": "双方通过 OCP 推进 HBF 技术规格；规格发布不证明大规模系统采用。", "status": "官方披露：规格协作", "sourceIds": [ "S042", "S043" ] }, { "id": "bics-development", "companyIds": [ "kioxia", "sandisk" ], "title": "BiCS FLASH 联合开发", "summary": "官方资料将新一代 BiCS 开发归于 Kioxia 与 Sandisk；具体制造和财务口径另核。", "status": "官方披露：联合开发", "sourceIds": [ "S014" ] }, { "id": "power-architecture", "companyIds": [ "nvidia", "infineon" ], "title": "AI 机架电源架构协作", "summary": "Infineon 公告描述与 NVIDIA 推进未来 AI 机架供电架构；不把生态参与当作订单或独家供货。", "status": "公司披露：架构协作", "sourceIds": [ "N005" ] } ], "milestones": [ { "id": "glass-research", "date": "2023-09-18", "domainId": "materials", "title": "Intel 公布玻璃基板方向", "status": "研发与路线规划", "summary": "公告属于测试和后续技术规划，不能据此写成所有 AI 封装已采用。", "sourceIds": [ "F025" ] }, { "id": "flash-separation", "date": "2025-02-21", "domainId": "storage", "title": "Western Digital flash 业务法律分离", "status": "已披露交易", "summary": "法律分离日与对外宣布或交易节点不同；NAND/SSD 与 HDD 分实体研究。", "sourceIds": [ "S050" ] }, { "id": "ficontec-transfer", "date": "2025-05-08", "domainId": "packaging", "title": "ficonTEC 相关资产过户核查", "status": "资产过户完成披露", "summary": "2025-05-08 为独立财务顾问核查文件日期；文件确认 FSG/FAG 相关权益过户，并列后续登记和付款事项，不能把公告日当作全部交易履行日。", "sourceIds": [ "F039" ] }, { "id": "cxl-4", "date": "2025-11-18", "domainId": "network", "title": "CXL 4.0 规范公布", "status": "规范发布", "summary": "规范状态不代表任意 CPU、交换和内存设备均具备可用互通。", "sourceIds": [ "N026" ] }, { "id": "samsung-hbm4", "date": "2026-02-12", "domainId": "memory", "title": "Samsung 宣布 HBM4 商业出货", "status": "公司声明：商业出货", "summary": "产品指标与制程来自厂商披露，未据此制作独立市场份额表。", "sourceIds": [ "S028" ] }, { "id": "seagate-mozaic", "date": "2026-03-03", "domainId": "storage", "title": "Seagate 公布 Mozaic 4+ 批量供货", "status": "公司声明：指定客户出货", "summary": "公告面向其披露的 hyperscaler 客户范围，不代表零售普遍可买。", "sourceIds": [ "S045" ] }, { "id": "rubin-platform", "date": "2026-03-16", "domainId": "compute", "title": "NVIDIA 公布 Vera Rubin 平台状态", "status": "公司声明：芯片 full production", "summary": "伙伴产品提供时间与各地区实际部署分开，不自动写成所有平台已上线。", "sourceIds": [ "R004" ] }, { "id": "micron-hbm4", "date": "2026-03-16", "domainId": "memory", "title": "Micron 披露 HBM4 量产出货", "status": "公司声明：Q1 开始出货", "summary": "公告日与其说明的实际出货起点不同，具体容量和堆高回到产品资料。", "sourceIds": [ "S027" ] }, { "id": "corsair-production", "date": "2026-06-09", "domainId": "compute", "title": "d-Matrix 宣布 Corsair full production", "status": "公司声明：量产", "summary": "厂商声明不替代统一条件下独立系统测试与客户验收。", "sourceIds": [ "R009" ] }, { "id": "hbm4e-samples", "date": "2026-06-18", "domainId": "memory", "title": "SK hynix 公布 HBM4E 送样", "status": "送样", "summary": "下一代样品阶段与已量产产品分开记录，不能自动升级收入成熟度。", "sourceIds": [ "S029" ] }, { "id": "bics10-samples", "date": "2026-07-03", "domainId": "storage", "title": "Kioxia 公布第十代 BiCS 送样", "status": "送样", "summary": "样片、密度和工艺代际见公告；送样不等于批量收入。", "sourceIds": [ "S013" ] }, { "id": "hbf-spec", "date": "2026-08-04", "domainId": "storage", "title": "HBF 首份技术规格公开", "status": "规格发布", "summary": "技术协作进入标准化阶段，系统样片和大规模采用仍需后续证据。", "sourceIds": [ "S042" ] }, { "id": "800v-architecture", "date": "2026-08-11", "domainId": "power", "title": "NVIDIA 更新 800VDC 电源路线", "status": "公布提供时间与架构", "summary": "混合 power rack 指向 2026 下半年，集中 row power center 的预期时间为 2027。", "sourceIds": [ "N002" ] }, { "id": "coherent-sic", "date": "2026-08-17", "domainId": "materials", "title": "Coherent 高导热 SiC 客户送样", "status": "送样", "summary": "材料定位为热管理衬底，送样不能视作 AI GPU 规模量产份额。", "sourceIds": [ "F064" ] }, { "id": "uec-11", "date": "2026-10-12", "domainId": "network", "title": "UEC 1.1 发布", "status": "规范版本发布", "summary": "仅确认规范版本发布时间，不支持任何产品已通过完整互操作测试的结论。", "sourceIds": [ "N023" ] } ] }